2013
DOI: 10.1021/jp4046337
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AgBiS2 Semiconductor-Sensitized Solar Cells

Abstract: We present a new ternary semiconductor sensitizer-AgBiS2 for solar cells. AgBiS2 nanoparticles were grown using a two-stage successive ionic layer adsorption and reaction process. Post annealing transformed the double-layered structure into AgBiS2 nanoparticles of 16 nm in diameter. Liquid-junction semiconductor-sensitized solar cells were fabricated from the synthesized AgBiS2 semiconductor. The best cell exhibited a short-circuit current density Jsc of 7.61 mA/cm2, an open-circuit voltage of 0.18 V, a fill f… Show more

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Cited by 134 publications
(91 citation statements)
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“…However, more recent experiments report a reduced value of 1.3 eV even for smaller nanoparticles of 4.62 ± 0.97 nm size [1]. Other bulk E g measurements report a value 1.2 eV [5], which would limit the extend of quantum confinement effects; indeed some authors report E g values of 1.32 eV for ~16 nm diameter samples [7], and values of 1.11 eV for AgBiS 2 thin films [13], in accordance to optical measurement of 1.10 eV [14]. The above discussion does not limit to E g .…”
Section: Introductionmentioning
confidence: 95%
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“…However, more recent experiments report a reduced value of 1.3 eV even for smaller nanoparticles of 4.62 ± 0.97 nm size [1]. Other bulk E g measurements report a value 1.2 eV [5], which would limit the extend of quantum confinement effects; indeed some authors report E g values of 1.32 eV for ~16 nm diameter samples [7], and values of 1.11 eV for AgBiS 2 thin films [13], in accordance to optical measurement of 1.10 eV [14]. The above discussion does not limit to E g .…”
Section: Introductionmentioning
confidence: 95%
“…Moreover, its ultralow thermal conductivity allows for its use in thermoelectric power generation [2,3], and it has also been explored as sensitizer and/or counter-electrode in sensitized solar cells [4,5]. The renewed interest on AgBiS 2 goes hand by hand with other compounds of the I-V-VI 2 family -where I = Cu, Ag, or an alkali metal; V = Sb or Bi, and VI = S, Se, or Te-studied in the recent times in thermoelectrics [2,6], solar cells [1,7], and phase-change memory devices [8,9].…”
Section: Introductionmentioning
confidence: 99%
“…[6][7][8] To date, the most widely studied NP sensitizers have been binary metal chalcogenides such as CdS, CdSe, PbS, Sb 2 S 3 , and Ag 2 S. 1,2,[9][10][11] Recently, SSCs based on ternary metal chalcogenides such as AgSbS 2 , AgBiS 2 , CuSbS 2 , AgInS 2 , and CuSbSe had also been reported. [12][13][14][15][16][17] In the synthesis of metal chalcogenides, the sulfur sources could be chosen from sodium sulfide (Na 2 S), sodium thiosulfate (Na 2 S 2 O 3 ), elemental sulfur powder, or thiourea (CH 4 N 2 S). Among these sources, Na 2 S is probably the most widely used sulfur source.…”
mentioning
confidence: 99%
“…45 AgBiS 2 has been employed in semiconductor-sensitized solar cells as a replacement for PbS. Thin films of AgBiS 2 have been fabricated by SILAR, 83 electrochemical atomic layer deposition, 84 and from solution processing of nanocrystals synthesized by the hot injection method. 85 For the former two, the devices had 2018) low open-circuit voltages and fill factors due to incomplete coverage of the electron transport layer exposing recombination pathways, while the latter used insulating ligands to cap AgBiS 2 nanocrystals.…”
Section: -10mentioning
confidence: 99%