Ageing mediated silicon suboxide interlayer growth in porous silicon: p-Si heterostructured metal-semiconductor-metal device for enhanced UV-visible photodetection

Annealing effect on the pyro-phototronic behaviour in Al/nanostructured PS-ML: p+-Si Schottky photovoltaic device

“…The surface morphological features of the unannealed and annealed PS-ML: p + -Si samples are analysed with the help of field emission scanning electron microscope (FESEM) images and energy dispersive X-ray (EDX) measurements. The authors in their earlier work on PS: p-Si structure [49,50] reports that ageing and annealing treatment (𝑇 > 200 𝑜 𝐶) have minimal effect on the overall thickness of the 𝑃𝑆 layer, though possess change on its surface oxygen contamination. In this article only the cross-sectional view FESEM micrograph of the unannealed PS-ML: p + -Si sample is presented, which are displayed in Fig 1 (a).…”

Study of collision sensor application for vehicle with high sensitivity silicon-based metal-semiconductor IR photodetector

“…The cleaning process involves using a diamond knife to cut the wafers into small pieces and then using the RCA clean process to remove any organic contaminants on the surface [1]. This is followed by using the piranha process, which involves using a mixture of H2SO4 and H2O2 to remove the native oxide layer and deposit a layer of SiO2 film on the wafer [2]. Finally, the wafers are dipped into BHF solution to remove the SiO2 layer.…”

“…In addition, the optical method can also be used to detect the concentration of the air pollutants in the atmosphere. By using the optical methods, we can deploy a remote sensing system in the atmosphere [2][3]. The system can detect the amount of air pollutants in the atmosphere.…”