Changes
in chemical and physical properties resulting from water
adsorption play an important role in the characterization and performance
of device-relevant materials. Studies of model oxides with well-characterized
surfaces can provide detailed information that is vital for a general
understanding of water–oxide interactions. In this work, we
study single crystals of indium oxide, the prototypical transparent
contact material that is heavily used in a wide range of applications
and most prominently in optoelectronic technologies. Water adsorbs
dissociatively already at temperatures as low as 100 K, as confirmed
by scanning tunneling microscopy (STM), photoelectron spectroscopy,
and density functional theory. This dissociation takes place on lattice
sites of the defect-free surface. While the In2O3(111)-(1 × 1) surface offers four types of surface oxygen atoms
(12 atoms per unit cell in total), water dissociation happens exclusively
at one of them together with a neighboring pair of 5-fold coordinated
In atoms. These O–In groups are symmetrically arranged around
the 6-fold coordinated In atoms at the surface. At room temperature,
the In2O3(111) surface thus saturates at three
dissociated water molecules per unit cell, leading to a well-ordered
hydroxylated surface with (1 × 1) symmetry, where the three water
OWH groups plus the surface OSH groups are imaged
together as one bright triangle in STM. Manipulations with the STM
tip by means of voltage pulses preferentially remove the H atom of
one surface OSH group per triangle. The change in contrast
due to strong local band bending provides insights into the internal
structure of these bright triangles. The experimental results are
further confirmed by quantitative simulations of the STM image corrugation.