2022
DOI: 10.1016/j.jcis.2022.08.114
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Aggregation-based phase transition tailored heterophase junctions of AgInS2 for boosting photocatalytic H2 evolution

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Cited by 9 publications
(7 citation statements)
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“…With the decrease in pH, the absorption band edge of CIS QDs did not move significantly, but the absorption intensity increased. It is reported that the protonation of sulfide atoms on the surface of many metal sulfides will lead to sulfur vacancies ( V s ). , For I–III–VI QDs, energy levels below the conduction of Vs contribute to a sub-band. In addition, with the increase of H + , the diffusion or coalescence of the Vs interface can generate internal defects.…”
Section: Results and Discussionmentioning
confidence: 99%
“…With the decrease in pH, the absorption band edge of CIS QDs did not move significantly, but the absorption intensity increased. It is reported that the protonation of sulfide atoms on the surface of many metal sulfides will lead to sulfur vacancies ( V s ). , For I–III–VI QDs, energy levels below the conduction of Vs contribute to a sub-band. In addition, with the increase of H + , the diffusion or coalescence of the Vs interface can generate internal defects.…”
Section: Results and Discussionmentioning
confidence: 99%
“…Hence, the VB positions of the materials were calculated to be 0.78 and 0.83 V for CIS and ZCIS-2, respectively, using eq . Furthermore, the VB potential of ZCIS-2 was also estimated through the VB-XPS technique, and the potential was found to be 0.88 eV, which is nearly equal to the VB potential calculated using eq . The VB-XPS plot is shown in Figure S12 of the Supporting Information. E normalg ( band gap ) = VB CB …”
Section: Applicationsmentioning
confidence: 99%
“…Furthermore, the VB potential of ZCIS-2 was also estimated through the VB-XPS technique, and the potential was found to be 0.88 eV, which is nearly equal to the VB potential calculated using eq 5. 67 The VB-XPS plot is shown in Figure S12 of the Supporting Information.…”
mentioning
confidence: 99%
“…Semiconducting metal sulfides, especially I–III–VI polysulfides, have many advantages, such as strong visible light absorption, narrow band gap, excellent conductivity, chemical stability, and light corrosion resistance. , Indium sulfide (In 2 S 3 ) is an n-type semiconductor with a band gap energy of 2.0–2.3 eV, high photosensitivity, and low toxicity, and it has been studied in a heterostructure with other semiconductors, including GCN, in a few reports. The photochemical properties of indium sulfide can be enhanced by the introduction of silver, obtaining I–III–VI sulfides with a range of stoichiometry, from doping levels to AgIn 5 S 8 and AgInS 2 . Silver indium sulfides (AIS) possess a narrower band gap energy (∼1.7 eV), which allows for a higher sunlight capture ability, favoring promising results in the research of photocatalytic degradation and hydrogen production by water splitting. Heterojunction composites containing AIS were successfully proposed, for example, between AgInS 2 nanosheets and TiO 2 , exhibiting an enhanced absorption of visible light and a promoted separation of photoinduced charge carrier pairs in the system, or zero-dimensional AgInS 2 QDs loaded on two-dimensional MXene nanosheets to construct a Z-type heterojunction with excellent interfacial charge transfer capability . After all, in view of the shortcomings of GCN, it is of practical significance to build a composite system of AIS QDs and GCN and optimize its optoelectronic properties by taking advantage of the unique properties of QDs.…”
Section: Introductionmentioning
confidence: 99%