Aging mathematical model of InGaN/GaN LEDs based on non-radiative recombination

Xu, Linwang; Qian, Keyuan

doi:10.1063/1.4992989

Cited by 3 publications

(1 citation statement)

References 13 publications

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“…However, for these supplementary functions, inter-and extrapolations between different temperature conditions or operating currents are not given. To mitigate such weaknesses of the standard, additional approaches were introduced in literature [24], [25] e.g. double exponential functions [26], [27] or modified logarithmic functions [11].…”

Section: Introductionmentioning

confidence: 99%

Lifetime Prediction of Current-and Temperature-Induced Degradation in Silicone-Encapsulated 365 nm High-Power Light-Emitting Diodes

et al. 2023

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We report on the degradation mechanisms and dynamics of silicone encapsulated ultraviolet A (UV-A) high-power light-emitting diodes (LEDs), with a peak wavelength of 365 nm. The stress tests were carried out for a period of 8665 hours with forward currents between 350 mA and 700 mA and junction temperatures up to 132 • C. Depending on stress condition, a significant decrease in optical power could be observed, being accelerated with higher operating conditions. Devices stressed at a case temperature of 55 • C indicate a decrease in radiant flux between 10 -40 % varying with measurement current, whereas samples stressed at higher case temperatures exhibit crack formation in the silicone encapsulant accompanied by electromigration shorting the active region. The analyzed current and temperature dependency of the degradation mechanisms allows to propose a degradation model to determine the device lifetime at different operating parameters. Additional stress test data collected at different aging conditions is used to validate the model's lifetime predictions.

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