Aging of I/O overdrive circuit in FinFET technology and strategy for design optimization

Liu, S. E.; Yu, Miao; Chen, Y. R.; Jao, Jen Yu; Lin, Marc; Fang, Y. H.; Lin, Ming

doi:10.1109/irps.2016.7574592

Search citation statements

Order By: Relevance

Paper Sections

Select...

Introduction2

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2019

2022

Publication Types

Select...

Article4

Other2

Preprint1

Relationship

Self Cite0

Independent7

Authors

Journals

Cited by 7 publications

(2 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In recent years, the evolution of semiconductor process technology continues to scale down the critical dimension in large-scale integrated circuits [1][2][3]. Advanced FinFET logic processes have become more complex for realizing more tightly packed transistors in multi-functional and more powerful Si chips.…”

Section: Introductionmentioning

confidence: 99%

Wide range detector of plasma induced charging effect for advanced CMOS BEOL processes

Chao

Yang

et al. 2021

Nanoscale Res Lett

View full text Add to dashboard Cite

show abstract

Section: Introductionmentioning

confidence: 99%

Wide range detector of plasma induced charging effect for advanced CMOS BEOL processes

Chao

Yang

et al. 2021

Nanoscale Res Lett

View full text Add to dashboard Cite

show abstract

“…In recent years, the evolution of semiconductor process technology continues to scale down the critical dimension in large-scale integrated circuits [1][2][3]. Advanced FinFET logic processes has become more complex for realizing more tightly packed transistors in multi-functional and more powerful Si chips.…”

Section: Introductionmentioning

confidence: 99%