Aging Precursor Identification and Lifetime Estimation for Thermally Aged Discrete Package Silicon Power Switches

Düşmez, Serkan; Ali, Syed Huzaif; Heydarzadeh, Mehrdad; Kamath, Anant S.; Duran, Hamit; Akin, Bilal

doi:10.1109/tia.2016.2603144

Cited by 94 publications

(29 citation statements)

References 39 publications

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“…Data for MOSFETs are harder to compare since the majority of reliability studies seem to be performed on IGBTs. However, increases in the region of 40% to 60% can generally be seen in previous literature [17,19,20].…”

Section: Background: Reliability and Condition Monitoring Of Power Sesupporting

confidence: 60%

Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs

2017

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Abstract:In fast switching power semiconductors, the use of a fourth terminal to provide the reference potential for the gate signal-known as a kelvin-source terminal-is becoming common. The introduction of this terminal presents opportunities for condition monitoring systems. This article demonstrates how the voltage between the kelvin-source and power-source can be used to specifically monitor bond-wire degradation. Meanwhile, the drain to kelvin-source voltage can be monitored to track defects in the semiconductor die or gate driver. Through an accelerated aging test on 20 A Silicon Carbide Metal-Oxide-Semiconductor-Field-Effect Transistors (MOSFETs), it is shown that there are opposing trends in the evolution of the on-state resistances of both the bond-wires and the MOSFET die. In summary, after 50,000 temperature cycles, the resistance of the bond-wires increased by up to 2 mΩ, while the on-state resistance of the MOSFET dies decreased by approximately 1 mΩ. The conventional failure precursor (monitoring a single forward voltage) cannot distinguish between semiconductor die or bond-wire degradation. Therefore, the ability to monitor both these parameters due to the presence of an auxiliary-source terminal can provide more detailed information regarding the aging process of a device.

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Section: Background: Reliability and Condition Monitoring Of Power Sesupporting

confidence: 60%

Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs

2017

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“…Theoretically, a precursor signal is monotonic, that is, increasing or descending. However, due to several factors such as noises, precursors contain always several areas of fluctuation which raises problems for the prognostic task (Dusmez et al, 2016). Consequently, the definition of an adequate precursor signal will surely facilitate the prediction task.…”

Section: Prognostic: Definition and A Brief Reviewmentioning

confidence: 99%

Remaining useful lifetime prediction of thermally aged power insulated gate bipolar transistor based on Gaussian process regression

Ismail

Saïdi

Sayadi

et al. 2020

Transactions of the Institute of Measurement and Control

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This paper proposes a new approach for power electronic converters faults prognosis under-insulated gate bipolar transistor (IGBT) failures. Power electronic converters such as inverters and rectifiers are crucial parts of most renewable energy systems. Usually, the power converters are subjected to a high failure frequency rate and lead to a power system shut down. These faults, generally, start with thermal overstress, leading to IGBT wear-out over time. In the considered application, the power electronic converters are supplied by a generator. The unbalance IGBT degradation has been artificially created through high amplitude thermal overstress utilizing a DC at the gate. The proposed prognosis approach is based on the computation of the time-domain features to extract the degradation behavior of the IGBT device. Then, the Gaussian process regression technique is applied to the remaining useful life estimation. Prognostic results in three IGBT cases illustrate the effectiveness of the proposed prognostic approach, leading to an effective prognostic procedure for IGBT faults in power electronic converters.

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“…Besides, the transconductance and threshold voltage of the IGBT module also change with the aging of the module [24], [37], [38], and the transconductance-based condition monitoring method is difficult to achieve on-line application due to the limitations of its specific measurement requirement. The monitoring method based on threshold voltage is divided into two types: static threshold voltage and dynamic threshold voltage [39], [40].…”

Section: ) Condition Monitoring Of Bond Wire Fatiguementioning

confidence: 99%

Review of Power Semiconductor Device Reliability for Power Converters

et al. 2017

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Aging Precursor Identification and Lifetime Estimation for Thermally Aged Discrete Package Silicon Power Switches

Cited by 94 publications

References 39 publications

Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs

Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs

Remaining useful lifetime prediction of thermally aged power insulated gate bipolar transistor based on Gaussian process regression

Review of Power Semiconductor Device Reliability for Power Converters

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