Aging properties of gold layers with different adhesion layers

Hieber, H.

doi:10.1016/0040-6090(76)90603-9

Cited by 25 publications

(16 citation statements)

References 3 publications

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“…Si was observed to accumulate on the gold surface below 340 C [18]. Although the thin film stack included a Ti adhesion layer, no trace of Ti was detected despite the fact that the bonding temperature exceeded the reaction temperature of Ti and Au, which is around 200 C [19], [20]. With only 10 nm of Ti, it is possible that the Ti had completely reacted with either Au or Si (titanium silicides are relatively easy to form as well), preventing elemental Ti from diffusing through the Au layer.…”

Section: A Fabrication Processmentioning

confidence: 99%

Fabrication of wafer-level thermocompression bonds

Tsau

Spearing

Schmidt

2002

J. Microelectromech. Syst.

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Abstract-Thermocompression bonding of gold is a promising technique for achieving low temperature, wafer-level bonding. The fabrication process for wafer bonding at 300 C via compressing gold under 7 MPa of pressure is described in detail. One of the issues encountered in the process development was e-beam source spitting, which resulted in micrometer diameter sized Au on the surfaces, and made bonding difficult. The problem was solved by inserting a tungsten liner to the graphite crucible. Surface segregation of Si on the Au surface at the bonding temperature was observed. Using Auger spectroscopy, a 1500 Å SiO 2 barrier layer was shown to be sufficient in preventing Si from reaching the surface. Lastly, a four-point bend delamination technique was used to quantify the bond toughness. The associated process steps that were required to prepare the test specimens are described. The critical strain energy release rate for the bonds ranged between 22 to 67 J/m 2 and was not shown to be strongly associated with the gold bond layer thickness in the thickness range studied (0.23 to 1.4 m).[828]Index Terms-Thermocompression bonding, wafer bonding.

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Section: A Fabrication Processmentioning

confidence: 99%

Fabrication of wafer-level thermocompression bonds

Tsau

Spearing

Schmidt

2002

J. Microelectromech. Syst.

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“…If one chain bends, another chain will bend on top of it, and packing of the terminal ends of the chains of the few surrounding molecules will be disordered relative to that of trans-extended chains. Molecules may kink due to, for example, the presence of grain boundaries or step edges in the metal film or impurities in solvents and reagents that deposit on the metal surface during SAM formation and cause irregularities in the metal lattice (Hieber 1976;Laibinis et al 1991b;Hoogvliet & van Bennekom 2001).…”

Section: Reproducibility Of Measurements Of Charge Transportmentioning

confidence: 99%

The study of charge transport through organic thin films: mechanism, tools and applications

Weiss

Kriebel

Rampi

et al. 2007

Phil. Trans. R. Soc. A.

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In this paper, we discuss the current state of organic and molecular-scale electronics, some experimental methods used to characterize charge transport through molecular junctions and some theoretical models (superexchange and barrier tunnelling models) used to explain experimental results. Junctions incorporating self-assembled monolayers of organic molecules-and, in particular, junctions with mercury-drop electrodes-are described in detail, as are the issues of irreproducibility associated with such junctions (due, in part, to defects at the metal-molecule interface).

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“…The thickness of these layers was such that the heat treatments did not cause loss of adhesion of the thin gold films under investigation (9,10). The gold films for the recrystallization experiments were evaporated without adhesion layers in order to avoid, at a later stage, anchoring of grain boundaries in them by species which diffused from the adhesion layer (11).…”

Section: Sample Preparationmentioning

confidence: 99%

“…1 Schematic cross-section of the metallizations used for this study the thin gold films revealed that the grain Bizes on both their bottom and top surfaces were similar. Mechanical wiping and scratching affect the behaviour of freshly deposited metallizations during subsequent heat treatment (9). Therefore, only thin films with undamaged surfaces were used for the ageing experiments.…”

Section: Sample Preparationmentioning

confidence: 99%

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Ageing of thin gold films

Hieber

Pape

1982

Gold Bull

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Thin gold metallizations are used in microelectronic devices when high reliability is required. Experience has shown that the operating lives of transistors and monolithic integrated circuits with high power dissipation, and of ultra-highfrequency devices such as microwave integrated hybrid circuits, are Longest when gold is used in the manufacture of their interconnections. With gold, the probability of zero-hour failures and of degradation under thermal and electrical bad, and in corrosive environments, is very low. The reasons for the high reliability of thin gold metallizations are to be found in the chemical stability of the metal, in the fact that ik is not very sensitive to diffusion from other metallizations and in the esse with which connections can be made to is by microwelding (1, 2, 3).

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Aging properties of gold layers with different adhesion layers

Cited by 25 publications

References 3 publications

Fabrication of wafer-level thermocompression bonds

Fabrication of wafer-level thermocompression bonds

The study of charge transport through organic thin films: mechanism, tools and applications

Ageing of thin gold films

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