AgSn cathode contact in gallium-arsenide transferred-electron devices

Wasse, M.P.; Clark, Bryan; Conlon, R.F.B.

doi:10.1049/el:19730139

Cited by 11 publications

(1 citation statement)

References 2 publications

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“…The most successful metallisation for the emitter found during the initial work was Ag-Sn, as used for contacts to GaAs Gunn devices. 10 The emitter pattern in the metallisation was defined photolithographically, and the base layer exposed by selective etching of the Ga x Al!_ x As. The base metallisation was Ti-Au.…”

Section: Introductionmentioning

confidence: 99%

Heterojunction GaAs/GaAlAs transistors with enhanced gain from avalanche multiplication

Ross¹,

Probert

Hicks³

et al. 1977

IEE J. SolidState Electron. Devices UK

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A GaAlAs/GaAs heterojunction transistor has been made using liquid-phase epitaxy. The emitter stripe was lO/uni wide by 100jum long. The base and emitter had equal impurity content around 5 X 10 23 /m 3 but, with the wide band gap GaALAs emitter, low-frequency current gains approaching 2000 were found. This is amongst the highest so far recorded for this type of transistor. The alpha-cutoff frequency was estimated to be around 1 GHz, but the unity gain frequency was experimentally as low as 100 MHz. This was attributed to high r.f. resistance, possibly caused by the Schottky barrier contact to the base region. When the basecollector region was driven close to primary breakdown, current densities in excess of 3 X 10 7 A/m a could be obtained without secondary breakdown occurring, at least for the duration of the bias pulse. This appeared to be about an order of magnitude better than for a comparable Si transistor. Avalanche multiplication could then increase the unity gain frequency to 400 MHz.

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Section: Introductionmentioning

confidence: 99%