2020
DOI: 10.3390/molecules25215043
|View full text |Cite
|
Sign up to set email alerts
|

Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Abstract: In this study, aluminum-doped zinc oxide (Al:ZnO) thin films were grown by high-speed atmospheric atomic layer deposition (AALD), and the effects of air annealing on film properties are investigated. The experimental results show that the thermal annealing can significantly reduce the amount of oxygen vacancies defects as evidenced by X-ray photoelectron spectroscopy spectra due to the in-diffusion of oxygen from air to the films. As shown by X-ray diffraction, the annealing repairs the crystalline structure a… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

1
13
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
9

Relationship

0
9

Authors

Journals

citations
Cited by 33 publications
(14 citation statements)
references
References 49 publications
1
13
0
Order By: Relevance
“…Distorted hexagonal islands occurred on the surfaces of the annealed film at 700 • C, as shown in Figure 1d, similar to the reported island nucleation of ε-Ga 2 O 3 in epitaxial growth on a c-plane sapphire substrate by metalorganic chemical vapor deposition at 650 • C [12,24,25]. It was considered that agglomeration, rather than the merging into large crystals, began to occur at 800 • C in a part of the film, and discontinuities and voids were observed [26]. Uniform, dense, compact, and well-defined grains with clear boundaries were observed in the annealed films at 900 • C; the grain size gradually increased with an increase in the annealing temperature from 500 to 900 • C.…”
Section: Resultssupporting
confidence: 84%
“…Distorted hexagonal islands occurred on the surfaces of the annealed film at 700 • C, as shown in Figure 1d, similar to the reported island nucleation of ε-Ga 2 O 3 in epitaxial growth on a c-plane sapphire substrate by metalorganic chemical vapor deposition at 650 • C [12,24,25]. It was considered that agglomeration, rather than the merging into large crystals, began to occur at 800 • C in a part of the film, and discontinuities and voids were observed [26]. Uniform, dense, compact, and well-defined grains with clear boundaries were observed in the annealed films at 900 • C; the grain size gradually increased with an increase in the annealing temperature from 500 to 900 • C.…”
Section: Resultssupporting
confidence: 84%
“…This is attributable to the development of the lattice strain in the ZnO crystal due to deposition of CDs at its surface. In general, the lattice strain tends to create structural defects in the ZnO lattice, such as oxygen vacancy (V o ), zinc vacancy (V zn ), zinc interstitial (Zn i ), oxygen interstitial (O i ), and so forth . Compared to pristine ZnO, the PL intensity corresponding to the defect state emission was more for ZnO/CD NCs, which indicates a higher concentration of defect states in ZnO/CD NCs as compared to ZnO NPs. , Interestingly, a new emission peak was observed at 371 nm in ZnO/CD NCs, which is attributable to the emission of a CD component of ZnO/CD.…”
Section: Resultsmentioning
confidence: 97%
“…The second part was 530.2 eV, which was attributed to oxygen vacancies (O v ; Figure S2a, Supporting Information). , The oxygen vacancies disappeared at higher temperatures. , At temperatures from 500 to 1000 °C, the oxygen vacancies disappeared (Figure S2b–f, Supporting Information). Furthermore, in the EPR spectra, a corresponding g-factor around 2.002 indicated the existence of oxygen vacancies in the composite at different temperatures (Figure e) .…”
Section: Resultsmentioning
confidence: 99%