2004
DOI: 10.1016/j.synthmet.2004.04.008
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Air-stable all-polymer field-effect transistors with organic electrodes

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Cited by 70 publications
(38 citation statements)
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“…[76] This proposed explanation for semiconductor instability is consistent with recent evidence that top gate devices typically exhibit enhanced stability in comparison with bottom gate devices. [77] In this architecture, the semiconductor is protected from the environment by the dielectric and gate layers which may act as a sacrificial surface for reaction with highly reactive dopants such as ozone.…”
Section: Oxidative Stabilitymentioning
confidence: 99%
“…[76] This proposed explanation for semiconductor instability is consistent with recent evidence that top gate devices typically exhibit enhanced stability in comparison with bottom gate devices. [77] In this architecture, the semiconductor is protected from the environment by the dielectric and gate layers which may act as a sacrificial surface for reaction with highly reactive dopants such as ozone.…”
Section: Oxidative Stabilitymentioning
confidence: 99%
“…In a recent paper we discussed the importance of a polymer's ionization potential and its linear correlation to the open-circuit voltage (V oc ). [5] In parallel, stability studies on poly(3-hexylthiophene) (P3HT) transistors [6,7] have shown that materials with ionization potentials in this range (4.5-5.0 eV) are susceptible to oxidative doping, and therefore transistors exposed to ambient atmosphere will, over time, p-dope because of interacting with oxygen. [7,8] For early organic photovoltaic (OPV) applications oxygen stability will be a critical issue.…”
Section: Introductionmentioning
confidence: 99%
“…Chemical structure of a) poly-2,2′:5′,2″-(3,3″-dihexyl-terthiophene) (C6-TT) and b)[6,6]-phenyl-C 61 -butyric acid methyl ester (PCBM).…”
mentioning
confidence: 99%
“…They are shown to be stable in air without protective coatings which is important for low-cost, high volume applications (128) . In comparing all-polymer FETs to fully inorganic FETs by changing one layer at a time of the inorganic FET to a polymer material, it is reported that very slight degradation of performance is seen when the polymer layer replaces the silicon substrate and oxide layer (95) .…”
Section: All-polymer Fetsmentioning
confidence: 99%