Air-Stable and Solution-Processable Perovskite Photodetectors for Solar-Blind UV and Visible Light

Guo, Yunlong; Liu, Chao; Tanaka, Hideyuki; Nakamura, Eiichi

doi:10.1021/jz502717g

Cited by 282 publications

(238 citation statements)

References 38 publications

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“…Several types of photodetectors based on photoconductors, photodiodes and phototransistors with broadband absorption [125][126][127][128][129] and tunable narrowband absorption 5,130 in the visible have been demonstrated, both being interesting features for sensitized photo-FETs.…”

Section: Ideal Sensitizer Characteristicsmentioning

confidence: 99%

Photo-FETs: Phototransistors Enabled by 2D and 0D Nanomaterials

2016

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The large diversity of applications in our daily lives that rely on photodetection Photodetectors are one of the key components in many optoelectronic devices which transduce optical into electrical information. Today, photodetectors have reached a mature technology level and address a huge application spectrum including imaging, remote sensing, fibre-optic communication and spectroscopy among many others. However, to tackle challenges and to surpass existing limitations in sensitivity of state-of-the-art photodetector systems, new device architectures and material systems are needed which offer low-cost fabrication and high performance over a wide spectral range. The active research field on photodetection grows and many novel nanostructured material systems 1 have been employed for light sensing including Quantum dots 2,3 , Perovskites 4,5 , organic molecules and polymers 6,7 , Carbon Nanotubes 8,9 , Graphene 10,11 and the large field of semiconducting 2D materials such as the transition metal dichalcogenides (TMDCs) and black phosphorus 12,13 .Photodetector performance is governed by both the optical and electronic properties of the employed semiconductor. The former determines the spectral coverage and quantum efficiency of the detector whereas the latter determines, through the carrier transport and carrier density, the amount of dark current flowing through the device, as well as the efficiency of charge separation and collection upon illumination. The key parameters for a strong signal response are a high photon to electron conversion rate (quantum efficiency) and ideally an inherent gain 3 mechanism, which yields multiple carriers per absorbed photon. The response signal is then weighed against the noise portion of the ratio, which has to be minimized for maximum sensitivity. There are several device-external noise sources, such as the photon noise due to the statistical arrival of photons on the device or the read-out noise in photodetector arrays that originates in preamplifier electronics. Here, we will put emphasis on the device (photodetector pixel) inherent noise, which stems partially from thermally generated charge carriers and also from the intrinsic carrier density that contribute to the dark current of the device (shot noise limit) as well as flicker noise (1/f). It is however important to note that the sensitivity of a detector with inherent noise lower than the noise floor of commercially used CMOS read-out circuits, typically met in photodiodes, is limited by the latter, thus a photodetector technology with an inherent gain mechanism is desired to alleviate this effect.The relevant performance metrics and terminology used throughout this article are described in Box 1. Box 1 -Performance metrics for photodetection Responsivity [A/W]The fundamental process behind photodetection is absorption of light. Responsivity R, a measure of output current per incoming optical power in units of A/W, describes how a detector system responds to illumination. Responsivity depends on the incident...

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Section: Ideal Sensitizer Characteristicsmentioning

confidence: 99%

Photo-FETs: Phototransistors Enabled by 2D and 0D Nanomaterials

2016

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“…Thus, perovskite solar cells have made impressive progress in just a few years with maximum power conversion efficiencies (PCEs) evolving from 3.8% [13] in 2009 to a certified 22.1% [14] in 2016. Besides solar cell, organic-inorganic hybrid halide perovskites have been found many other applications, such as light-emitting diode [15], laser [16], photodetector [17], catalysis [18], thermoelectricity [19], making them hot stars in materials science.…”

Section: Introductionmentioning

confidence: 99%

Progress in organic-inorganic hybrid halide perovskite single crystal: growth techniques and applications

Ding

Yan

2017

Sci. China Mater.

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“…[11,12] Owing to their exciting photovoltaic applications, their promising potential in photodetection is drawing growing interest. [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29] Yang and co-workers first fabricated a vertical perovskite photodetector, [13] which demonstrated excellent light detecting capability. Lateral photodetectors are easy to make, and more importantly, their intrinsic gain mechanism can lead to very high photosensitivity.…”

mentioning

confidence: 99%

“…[22,23] Also, it should be noted that graphene and the transition metal sulfides are usually deposited by complex and costly process, such as chemical vapor deposition, mechanical exfoliation, and hence is not suitable for large-area fabrication. Solutionprocessed MoS 2 [24] or organic [25,26] /CH 3 CH 3 PbI 3 photodetectors have been fabricated, but their performances are still limited by low on/off ratios of <500. Here we employed TiO 2 nanocrystal (NC) film to transport photocarrier.…”

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confidence: 99%

TiO₂ Nanocrystal/Perovskite Bilayer for High‐Performance Photodetectors

Ren

Chen

et al. 2017

Adv Elect Materials

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long carrier diffusion lengths, [9,10] and low deep-state defects. [11,12] Owing to their exciting photovoltaic applications, their promising potential in photodetection is drawing growing interest. [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29] Yang and co-workers first fabricated a vertical perovskite photodetector, [13] which demonstrated excellent light detecting capability. Lateral photodetectors are easy to make, and more importantly, their intrinsic gain mechanism can lead to very high photosensitivity. [30] Thereby many efforts have been devoted to developing such lateral devices. For single-layer perovskite devices reported, [14][15][16][17] relatively high detectivity (≈10 12 Jones) and short rise/decay time (dozens of milliseconds) were realized, but this is always associated with low on/ off ratios and poor electrical instabilities (induced by ion migration). To meet such challenge, bilayer devices are designed: perovskite film responsible for light absorption and another material film responsible for carriers transport. Significant enhancement in photoresponsivity has been achieved. [18][19][20][21][22][23][24] However, the reported bilayer devices usually employed high-conductive 2D layer to function as main photocarrier transport channel, and this leads to certain detrimental defects. For example, the graphene/perovskite bilayer devices exhibit very low on/off ratio of smaller than 2, [18][19][20][21] and the transition metal sulfides (WS 2 , MoS 2 )/perovskite bilayer devices have very long rise/decay time of a few seconds. [22,23] Also, it should be noted that graphene and the transition metal sulfides are usually deposited by complex and costly process, such as chemical vapor deposition, mechanical exfoliation, and hence is not suitable for large-area fabrication. Solutionprocessed MoS 2 [24] or organic [25,26] /CH 3 CH 3 PbI 3 photodetectors have been fabricated, but their performances are still limited by low on/off ratios of <500. Here we employed TiO 2 nanocrystal (NC) film to transport photocarrier. The designed TiO 2 NC/perovskite bilayer photodetector exhibits high overall performance with on/off ratio of 4000, photodetectivity of 1.85 × 10 12 Jones, and rise/decay time of 0.49/0.56 s. Figure 1a presents the schematic structure of the TiO 2 NC/ perovskite bilayer photodetector fabricated on a glass substrate. First, the TiO 2 NC film was spin coated on the glass substrate, and then Al electrodes were thermally evaporated on the TiO 2 NC film with help of an interdigital mask, resulting in a channel length of 80 µm and a channel width of 8800 µm. The perovskite film (CH 3 NH 3 PbI 3 ) was then spin coated on the TiO 2 NC film, completing the device fabrication (details Owing to their attractive performance in photovoltaic devices, organolead halide perovskite materials have attracted enormous interest for photodetector applications. However, current perovskite-based photodetectors mainly rely on high-conductive 2D materials such as graphene or transition metal sulfi...

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Air-Stable and Solution-Processable Perovskite Photodetectors for Solar-Blind UV and Visible Light

Cited by 282 publications

References 38 publications

Photo-FETs: Phototransistors Enabled by 2D and 0D Nanomaterials

Photo-FETs: Phototransistors Enabled by 2D and 0D Nanomaterials

Progress in organic-inorganic hybrid halide perovskite single crystal: growth techniques and applications

TiO₂ Nanocrystal/Perovskite Bilayer for High‐Performance Photodetectors

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Air-Stable and Solution-Processable Perovskite Photodetectors for Solar-Blind UV and Visible Light

Cited by 282 publications

References 38 publications

Photo-FETs: Phototransistors Enabled by 2D and 0D Nanomaterials

Photo-FETs: Phototransistors Enabled by 2D and 0D Nanomaterials

Progress in organic-inorganic hybrid halide perovskite single crystal: growth techniques and applications

TiO2 Nanocrystal/Perovskite Bilayer for High‐Performance Photodetectors

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Product

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TiO₂ Nanocrystal/Perovskite Bilayer for High‐Performance Photodetectors