Air Stable High Mobility ALD ZnO TFT with HfO<sub>2</sub> Passivation Layer Suitable for CMOS-BEOL Integration

Wang, Wenhui; Lu, Jiqing; Lan, Jun; Zhou, B.; Zhang, Yiyang; Liang, Jinxuan; Zaheer, Muhammad; Shen, Mei; Li, Yida

doi:10.1109/cstic55103.2022.9856860

2022 China Semiconductor Technology International Conference (CSTIC) 2022

DOI: 10.1109/cstic55103.2022.9856860

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Air Stable High Mobility ALD ZnO TFT with HfO₂ Passivation Layer Suitable for CMOS-BEOL Integration

Wenhui Wang

Jiqing Lu

Jun Lan

et al.

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2024

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p-Type Oxide Thin-Film Transistor with Unprecedented Hole Field-Effect Mobility for an All-Oxide CMOS CFET-like Inverter Suitable for Monolithic 3D Integration

Lu,

Shen,

Feng

et al. 2024

Nano Lett.

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The lack of low temperature processable, highperformance p-type oxide thin-film transistors (TFTs) limits their implementation in monolithically integrated back-end-of-line (BEOL) CMOS circuitries. In this work, we demonstrate a reactive magnetron-sputtered SnO x TFT with unprecedented hole field-effect mobility (μ FE-hole ) of 38.7 cm 2 /V•s, as well as an on/off current ratio (I on/off ) of 2.5 × 10 3 and lower subthreshold swing (SS) of 240.9 mV/dec when compared to reported works on ptype oxide-based TFTs. Material characterization correlated with the SnO x TFTs' electrical behavior elucidated the performance to the structural and compositional phase modulation of the SnO x thin films, modulated by O 2 partial pressure during deposition and post-encapsulation annealing. By integrating the SnO x TFT with an IGZO TFT in both planar and stacked complementary FET-like form, we demonstrated a true oxide-based CMOS inverter, achieving one of the highest voltage gains of 57 and the lowest static power consumption down to 34 pW for both on and off states.

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p-Type Oxide Thin-Film Transistor with Unprecedented Hole Field-Effect Mobility for an All-Oxide CMOS CFET-like Inverter Suitable for Monolithic 3D Integration

Lu,

Shen,

Feng

et al. 2024

Nano Lett.

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Air Stable High Mobility ALD ZnO TFT with HfO₂ Passivation Layer Suitable for CMOS-BEOL Integration

Cited by 1 publication

References 10 publications

p-Type Oxide Thin-Film Transistor with Unprecedented Hole Field-Effect Mobility for an All-Oxide CMOS CFET-like Inverter Suitable for Monolithic 3D Integration

p-Type Oxide Thin-Film Transistor with Unprecedented Hole Field-Effect Mobility for an All-Oxide CMOS CFET-like Inverter Suitable for Monolithic 3D Integration

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Air Stable High Mobility ALD ZnO TFT with HfO2 Passivation Layer Suitable for CMOS-BEOL Integration

Cited by 1 publication

References 10 publications

p-Type Oxide Thin-Film Transistor with Unprecedented Hole Field-Effect Mobility for an All-Oxide CMOS CFET-like Inverter Suitable for Monolithic 3D Integration

p-Type Oxide Thin-Film Transistor with Unprecedented Hole Field-Effect Mobility for an All-Oxide CMOS CFET-like Inverter Suitable for Monolithic 3D Integration

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Air Stable High Mobility ALD ZnO TFT with HfO₂ Passivation Layer Suitable for CMOS-BEOL Integration