2012
DOI: 10.1021/la204486y
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Air-Stable Spin-Coated Naphthalocyanine Transistors for Enhanced Chemical Vapor Detection

Abstract: Air-stable organic thin-film transistor (OTFT) sensors fabricated using spin-cast films of 5,9,14,18,23,27,32,36-octabutoxy-2,3-naphthalocyanine (OBNc) demonstrated improved chemical vapor sensitivity and selectivity relative to vacuum-deposited phthalocyanine (H(2)Pc) OTFTs. UV-vis spectroscopy data show that annealed spin-cast OBNc films exhibit a red-shift in the OBNc Q-band λ(max) which is generally diagnostic of improved π-orbital overlap in phthalocyanine ring systems. Annealed OBNc OTFTs have mobilities… Show more

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Cited by 15 publications
(24 citation statements)
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“…This allowed to infer that possibly, irregular coating at 150 °C resulted in decreased level of electron donation to the SWCNTs backbone and certainly, conduction was dominated by electrical behavior of pristine SWCNTs. Finally, an intermediate conduction behavior (with device current ≈2.492 times than that of S 1 ) for S 2 could be attributed to optimum coating thickness resulted at 90 °C and annealing induced long range ordering of the FeTPP layer. An optimum thickness of functionality layer regulates favorable level of electron donation while enhanced π–π overlap between adjacent porphyrin rings and π delocalization at SWCNTs/FeTPP interface is offered by long range ordering.…”
Section: Resultsmentioning
confidence: 92%
“…This allowed to infer that possibly, irregular coating at 150 °C resulted in decreased level of electron donation to the SWCNTs backbone and certainly, conduction was dominated by electrical behavior of pristine SWCNTs. Finally, an intermediate conduction behavior (with device current ≈2.492 times than that of S 1 ) for S 2 could be attributed to optimum coating thickness resulted at 90 °C and annealing induced long range ordering of the FeTPP layer. An optimum thickness of functionality layer regulates favorable level of electron donation while enhanced π–π overlap between adjacent porphyrin rings and π delocalization at SWCNTs/FeTPP interface is offered by long range ordering.…”
Section: Resultsmentioning
confidence: 92%
“…This data in SI also includes measurements of devices grown at room temperature for which the mobility in vacuum (air) is ~ 10 -5 cm 2 /Vs (~ 10 -4 cm 2 /Vs), several orders of magnitude lower than the maximum value. It is known that an increase in current flowing FETs formed from solubilised Nc derivatives can occur in the presence of oxidising species through their action as electron acceptors 9 . Our observation of a shift of threshold voltage to less negative values is consistent with an increase in hole concentration which compensates traps, either in the dielectric layer or at the interfaces of the Nc film.…”
Section: Resultsmentioning
confidence: 99%
“…Dye molecules derivatised from phthalocyanine (Pc) and the larger analogue molecule, naphthalocyanine (Nc) have attracted much attention as candidate materials for photovoltaic devices, field effect transistors, gas sensing and organic spintronic devices [1][2][3][4][5][6][7][8][9][10][11][12][13] .…”
Section: Introductionmentioning
confidence: 99%
“…Metal phthalocyanines (MPc) have high chemical and thermal stability as well as interesting semiconducting properties, which make them excellent candidates for organic field effect transistors (OFETs) . In addition, the strong charge transport dependence on the chemical environment makes them also good candidates for chemical sensing.…”
Section: Introductionmentioning
confidence: 99%