Air-stable ultrathin Cr3Te4 nanosheets with thickness-dependent magnetic biskyrmions

Cr3X4 (X = Se, Te) monolayers as a new platform to realize robust spin filters, spin diodes and spin valves

“…Through band engineering, a spin Seebeck transistor is viable by integrating with an FM interface. Thanks to the successful synthesis of Cr 3 X 4 (X = Se, Te) nanosheets, 22,35 one can look for the interfacial candidates from the experimental substrates. Further efforts remain to be made for boosting the spintronic application of Cr 3 X 4 (X = Se, Te) monolayers.…”

“…Cr 3 X 4 (X = Se, Te) monolayers are intrinsic FM half-metals with a high Curie temperature (up to 370 K for Cr 3 Se 4 and 460 K for Cr 3 Te 4 ), as theoretically predicted by Zhang et al 11 Very recently, air-stable FM Cr 3 Te 4 nanosheets with controlling thickness have been synthesized by a chemical deposition approach. 22 Motivated by both theoretical prediction and recent experimental realization, we set out to study the spin transport properties of Cr 3 X 4 monolayers in order to explore their potential applications in spintronic devices. We have shown that Cr 3 X 4 monolayers are excellent candidates for application in spin-based devices such as spin filters, spin diodes and spin valves.…”

Atomic scale insights into the epitaxial growth mechanism of 2D Cr3Te4 on mica

“…13,16 On the other hand, 2D chromium–telluride (Cr–Te) compounds are some of the very-limited 2D magnetic materials that have shown exotic phenomena such as anomalous Hall effects and the topological Hall effect. 15,19–21 Furthermore, with a low-symmetry crystal structure and strong spin–orbit coupling, Cr–Te compounds offer a unique platform for studying magnetocrystalline anisotropy. 22,23 The unique magnetic properties and abundant spin phenomena make 2D Cr–Te compounds an excellent candidate for spintronic devices.…”

“…18,24,25 Compared to mechanical exfoliation and molecular beam epitaxy, CVD shows advantages in the phase engineering and possibility of wafer-scale production with low cost. 5,26,27 Previous studies have shown that almost all the available materials in the Cr–Te system can be grown by CVD, including CrTe, 27–29 Cr 2 Te 3 , 30,31 Cr 5 Te 8 , 21,26 Cr 3 Te 4 , 19 and CrTe 2 . 32 Through changing the growth parameters during CVD, the phase structure and stoichiometric ratio of Cr–Te compounds can be adjusted.…”

“…21,26–29 For example, recently Li et al demonstrated the growth of ultrathin air-stable Cr 3 Te 4 nanosheets with topologically nontrivial magnetic-spin states. 19 In fact, many of the 2D magnetic materials are achieved by an epitaxial growth on mica. 33 Wu et al 29 obtained CrTe crystals with mono- and few unit-cell thickness through a CVD-assisted epitaxial growth.…”