IntroductionThe integer quantum Hall effect (IQHE) -observed in two-dimensional electron systems (2DES) subject to a strong perpendicular magnetic field [1] -has been well studied using single-particle arguments [2][3][4][5][6][7][8][9][10][11]. However, experiments on mesoscopic MOSFET devices have questioned the validity of such a simple single-particle picture. Measurements of the Hall conductance as a function of magnetic field B and gate voltage [12] exhibited regular patterns along integer filling factors. It was argued that these patterns should be attributed to Coulomb blockade effects. Similar patterns have been found recently also in measurements of the electronic compressibility κ as a function of B and electron density e n in the IQHE [13] as well as the fractional quantum Hall effect (FQHE) [14]. From these measurements it turns out that deep in the localised regime between two Landau levels, stripes of constant width with particularly small κ can be identified. These stripes consist of a collection of small-κ lines, identifiable with localised states, and their number is independent of B. This is inconsistent with a single-particle picture where one expects a fan-diagram of lines emanating from (0, 0) in the