2006
DOI: 10.1016/j.ssi.2005.11.012
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Al-26 diffusion measurement in 2/1-mullite by means of Secondary Ion Mass Spectrometry

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Cited by 32 publications
(42 citation statements)
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“…21 at temperatures above 1200 • C. [49][50][51][52] If the structural oxygen vacancies in mullite are part of the path ways for Al, Si, and O migration, the diffusion coefficients parallel c-axis should be higher than the corresponding ones parallel to b-axis. This follows from the fact that the density of structural oxygen vacancies occurring along [0 0 1] is higher than perpendicular to it.…”
Section: Atomic Diffusionmentioning
confidence: 99%
“…21 at temperatures above 1200 • C. [49][50][51][52] If the structural oxygen vacancies in mullite are part of the path ways for Al, Si, and O migration, the diffusion coefficients parallel c-axis should be higher than the corresponding ones parallel to b-axis. This follows from the fact that the density of structural oxygen vacancies occurring along [0 0 1] is higher than perpendicular to it.…”
Section: Atomic Diffusionmentioning
confidence: 99%
“…Tracer diffusivity studies in single crystalline mullite [2][3][4][5] show that silicon is the slowest species compared to oxygen and aluminium. Therefore, we can neglect Si 4+ ion fluxes and suppose that Al 2 O 3 is transported via coupled Al 3+ and O 2− ion fluxes through the single crystalline mullite grains.…”
Section: Discussionmentioning
confidence: 99%
“…Thus, for a deeper insight into diffusion-related processes we have carried out comprehensive tracer diffusion experiments ( 18 O, 30 Si, 26 Al) within the last few years. [2][3][4] Recently, we have presented a consistent reaction model for the solid state formation of mullite basing upon the tracer diffusivity data. 5 The aim of the present paper is to analyse compositional variations of mullite crystals in the light of the diffusivity of the involved atomic species.…”
Section: Introductionmentioning
confidence: 99%
“…Although the measurement methods are well known, their use is rather complex. In fact, experimental errors are often comparable with the measured quantities [6][7][8][9][10]. One important source of uncertainty is the influence of interfacial processes on the measured bulk ionic and/or electronic transference parameters, which is observed in many cases.…”
Section: Introductionmentioning
confidence: 88%