Al- and Al:In-Doped ZnO Thin Films Deposited by RF Magnetron Sputtering for Spacecraft Charge Mitigation

Abstract

We investigate the utility of impurity-doped ZnO as charge-mitigating thin films for spacecraft in geosynchronous orbit. Satellite solar panel cover glass and thermal control blankets are commonly coated in tin-doped indium oxide which serves as a leakage path for accumulated surface charge. The increase in demand for indium has generated interest in alternative space-stable satellite coatings. We demonstrate the orbital stability of Al-and Al:In-doped ZnO exposed to a high-energy electron flux and simulated solar ultraviolet (UV) radiation.

Preparation and Characterization of ZnO: In Transparent Conductor by Low Cost Dip Coating Technique

“…ZnO has direct band gap semiconductor of 3.27 eV and has been recognized for its promising applications in blue/UV optoelectronics, spintronic devices, surface acoustic wave devices and sensor applications [5]. ZnO thin films have been prepared by various deposition techniques, such as RF magnetron sputtering [6][7][8], spray pyrolysis [9][10][11][12][13], sol-gel process [14][15][16][17][18], electrochemical deposi-tion [19], molecular beam epitaxy (MBE) [20], pulsed laser deposition (PLD) [21][22][23][24] and metal organic chemical vapor deposition [25]. However the transport properties of undoped ZnO thin films are not stable, especially at high temperatures due to oxygen.…”