Al and Ga doped ZnO films prepared by a sol–gel spin coating technique

Ng, Zi-Neng; Chan, Kah‐Yoong; Low, Cheng-Yang; Kamaruddin, Sharul Ashikin; Sahdan, Mohd Zainizan

doi:10.1016/j.ceramint.2015.03.183

Cited by 45 publications

(20 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Formation of granular surface is common for epitaxial ZnO lms produced by the ALD process. 17,18 When increasing the ZnO lm thickness by the process cycles, ZnO nanopatches with island-shape disappear, and at thin lms were formed in the MoS 2 nanosheets (Fig. S1 †).…”

Section: Resultsmentioning

confidence: 99%

Highly efficient and flexible photodetector based on MoS₂–ZnO heterostructures

et al. 2019

View full text Add to dashboard Cite

show abstract

Section: Resultsmentioning

confidence: 99%

Highly efficient and flexible photodetector based on MoS₂–ZnO heterostructures

et al. 2019

View full text Add to dashboard Cite

show abstract

“…Both Al and Ga are the most suitable dopants for substituting into ZnO thin films in transparent electronics applications [ 10 ]. A few papers have compared the physical properties of Al-doped ZnO (AZO) and Ga-doped ZnO (GZO) thin films prepared under the same processes and conditions [ 9 , 10 , 11 , 12 , 13 ]. Ng et al reported that sol-gel-derived AZO with an Al doping level of 1 at % and a GZO with a Ga doping level of 2 at % were found to have the optimal electrical properties [ 11 ].…”

Section: Introductionmentioning

confidence: 99%

Comparative Studies on Ultraviolet-Light-Derived Photoresponse Properties of ZnO, AZO, and GZO Transparent Semiconductor Thin Films

Tsay

Hsu

2017

Materials

View full text Add to dashboard Cite

ZnO, Al-doped ZnO (AZO), and Ga-doped ZnO (GZO) semiconductor thin films were deposited on glass substrates via a sol-gel spin-coating process for application in a photoconductive ultraviolet (UV) detector. The doping concentrations of Al and Ga were 1.0 at % in the precursor solutions. In this study, the microstructural features and the optical and electrical properties of sol-gel-derived ZnO, AZO, and GZO thin films were compared, and the performance of ZnO-based UV photodetectors under ultraviolet A (UVA) light were measured. Experimental results confirmed the synthesis of single-phase nanocrystalline ZnO-based thin films and the successful substitution of Al and Ga into Zn sites in ZnO crystals. The results also demonstrated that the optical transmittance and electrical properties of ZnO thin films could be improved by Al and Ga doping. UV photodetectors based on ZnO-based thin films, having a metal-semiconductor-metal (MSM) configuration, were fabricated with Al inter-digitated electrodes. All photodetectors showed an ohmic nature between semiconductor and electrode contacts and exhibited a sharp increase in photocurrent under illumination with UVA light. We found that the MSM UV photodetector based on the GZO semiconductor thin film exhibited the best UV response (IUVA/Idark) of 73.3 and the highest photocurrent responsivity of 46.2 A/W under UVA light (power density ~0.825 mW/cm2) at 5 V bias.

show abstract

“…Al doped ZnO has been extensively explored as transparent conducting films with high electrical conductivity [ 6 ]. Ng et al [ 7 ] found a high resistivity and a significant transparency around 90% in the 370–800 nm wavelength range for Ga and Al doped ZnO by using the sol-gel spin coating technique. Hsu et al [ 8 ] noted an increase in gap energy after doping with Ga and In, but a reduced band gap for Al doped ZnO compared to pristine ZnO.…”

Section: Introductionmentioning

confidence: 99%

Comparative Study on ZnO Monolayer Doped with Al, Ga and In Atoms as Transparent Electrodes

et al. 2017

View full text Add to dashboard Cite

Transparent anodes are indispensable components for optoelectronic devices. Two-dimensional (2D) materials are attracting increasing research interest due to their unique properties and promising applications. In order to design novel transparent anodes, we investigated the electronic, optical, and electrical properties of 2D ZnO monolayers doped with Al, Ga, and In using the first-principles calculation in combination with the Boltzmann transport theory. When the doping concentration of Al, Ga, and In is less than 12.5 wt %, we find that the average transmittance reaches up to 99% in the visible and UV regions. Moreover, the electrical conductivity is enhanced for the Al, Ga, and In doped systems compared to that of the pristine ZnO monolayer. In particular, a good electrical conductivity with a significant improvement for the In doped ZnO monolayer is achieved compared to Al and Ga doping at the 6.25 wt % level. These results suggest that the ZnO monolayer based materials, and in particular the In doped ZnO monolayer, are promising transparent anodes for nanoscale electronic and optoelectronic applications.

show abstract

Al and Ga doped ZnO films prepared by a sol–gel spin coating technique

Cited by 45 publications

References 20 publications

Highly efficient and flexible photodetector based on MoS₂–ZnO heterostructures

Highly efficient and flexible photodetector based on MoS₂–ZnO heterostructures

Comparative Studies on Ultraviolet-Light-Derived Photoresponse Properties of ZnO, AZO, and GZO Transparent Semiconductor Thin Films

Comparative Study on ZnO Monolayer Doped with Al, Ga and In Atoms as Transparent Electrodes

Contact Info

Product

Resources

About

Al and Ga doped ZnO films prepared by a sol–gel spin coating technique

Cited by 45 publications

References 20 publications

Highly efficient and flexible photodetector based on MoS2–ZnO heterostructures

Highly efficient and flexible photodetector based on MoS2–ZnO heterostructures

Comparative Studies on Ultraviolet-Light-Derived Photoresponse Properties of ZnO, AZO, and GZO Transparent Semiconductor Thin Films

Comparative Study on ZnO Monolayer Doped with Al, Ga and In Atoms as Transparent Electrodes

Contact Info

Product

Resources

About

Highly efficient and flexible photodetector based on MoS₂–ZnO heterostructures

Highly efficient and flexible photodetector based on MoS₂–ZnO heterostructures