Al and Ti secondary neutral and secondary ion emission from oxide samples in the high-frequency sputtering mode of HF-plasma SNMS

Atomic Spectrometry Update. Atomic mass spectrometry

“…Strong Al z signals and minor Ti z signals, without a proportional increase of the O z signal, were observed in the hf plasma SNMS of an insulating, mm-thick, oxide layer on Ti-48Al-2Cr-2Nb. 303 These were shown to be due to the secondary ions, which could form up to 10% of the detected ions in hf sputtering and plasma processes Dreer et al 304 compared the performance of hf SNMS with SIMS, Auger electron spectrometry and hf GD-OES for the quantitative, sputter depth profiling of non-conducting siliconand aluminium oxynitride films. The methods of choice for depth profiling proved to be hf SNMS and SIMS.…”