2009
DOI: 10.1016/j.mseb.2008.11.001
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Al/Au ohmic contact to n-ZnO by dc sputtering

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Cited by 10 publications
(2 citation statements)
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“…However, the significant growth of the insulated Al 2 O 3 interfacial layer between the Al/ZnO-ITO contact systems at an elevated annealing temperature became harmful to the carrier injection, resulting in an increase in ohmic contact resistance. 40,42,43) Typical I-V characteristic curves of the resulting Ni/Au Schottky contact to the ZnO-based structure with an optimized ohmic contact resistance before and after oxygen plasma passivation on the undoped ZnO Schottky contact surface are shown in Fig. 9.…”
Section: Resultsmentioning
confidence: 99%
“…However, the significant growth of the insulated Al 2 O 3 interfacial layer between the Al/ZnO-ITO contact systems at an elevated annealing temperature became harmful to the carrier injection, resulting in an increase in ohmic contact resistance. 40,42,43) Typical I-V characteristic curves of the resulting Ni/Au Schottky contact to the ZnO-based structure with an optimized ohmic contact resistance before and after oxygen plasma passivation on the undoped ZnO Schottky contact surface are shown in Fig. 9.…”
Section: Resultsmentioning
confidence: 99%
“…1,8 V. Al/Au/ZnO INTERFACE Gold is known to exhibit Schottky barrier formation to ZnO, 1,12 and some experimental strategies with intercalated or alloyed gold have been discussed to limit metal-oxygen interdiffusion and passivate the surfaces. [21][22][23] Furthermore, an ultra-thin Au interlayer was recently proposed as blocking strategy between ZnO and a molecular dye, in order to optimize a third generation photovoltaic cell of novel design. 24 Here, we aim at understanding the role of an Au interlayer in the Al/ZnO interface: We therefore consider a single Au layer interposed between Al and ZnO, and we examine if this is sufficient to reverse the situation, moving from an Ohmic to a Schottky behavior.…”
Section: Al/azo Interfacementioning
confidence: 99%