Al, B, and Ga ion-implantation doping of SiC

Handy, Evan M.; Rao, Mulpuri V.; Holland, O. W.; H., P.; Jones, Kenneth A.; Derenge, Michael A.; Vispute, R. D.; Venkatesan, T.

doi:10.1007/s11664-000-0135-z

Cited by 32 publications

(8 citation statements)

References 30 publications

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“…Despite the annealing performed up to 1700°C, some defects are observed in SiC 70 . In addition, severe surface damage can take place due to Si sublimation and redistribution in the high‐temperature annealing process 71 . To replace the annealing process at high temperature after ion implantation, pulsed laser annealing has been exercised to suppress ion‐implanted defects and to activate ion‐implanted dopants.…”

Section: Fabrication and Doping Methods Of F‐sic With Photoluminescen...mentioning

confidence: 99%

White light emission of wide‐bandgap silicon carbide: A review

et al. 2022

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White light-emitting diodes (LEDs) are the most promising alternative to the conventional lighting sources due to their high efficacy and energy saving in illumination. Silicon carbide (SiC) has a wide optical bandgap and could be tailored to emit light at different wavelengths across the entire visible spectrum by introducing different dopants. Donor and acceptor (DA) co-doped fluorescent SiC (f-SiC) is a potential candidate for replacing phosphor material in white LEDs, as it has been observed as a good wavelength converter overcoming the disadvantages of rare earth-containing phosphors, such as poor color-rendering index (CRI), short lifetime, and short degradation time. The current study attempts to present an overview on the available approaches to fabricate f-SiC for generating the white light emission and challenges in fundamental research issues to enhance quantum efficiency, color rendering performance, stability, reproducibility of color quality, and lifetime of f-SiC.

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Section: Fabrication and Doping Methods Of F‐sic With Photoluminescen...mentioning

confidence: 99%

White light emission of wide‐bandgap silicon carbide: A review

et al. 2022

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“…There are also several reports on acceptor dopants (such as AI, B and Ga) [5]- [6] implantation into 4H-SiC, but more work needs to be done. Among these acceptor dopants , AI is a preferred acceptor dopant due to its lower activation energy (200 meV) [7] compared to other acceptors (Le.…”

Section: Introductionmentioning

confidence: 99%

Annealing effects on structural, optical and electrical properties of Al implanted 4H-SiC

Zhang

Huang²,

Hong³

et al. 2009

2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

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Effects of AI ions implantation into n-type 4H-SiC followed by annealing at various temperatures have been studied by Atomic Force Microscopy (AFM) , Raman scattering, Fourier transform infrared (FTIR) reflectance spectroscopy, and Hall effect measurements. AFM experiments observed a large amount of discontinuous strips on 4H-SiC surface running along three directions after high temperature annealing. Raman scattering and FTIR spectra jointly indicated the damage and amorphization of 4H-SiC due to AI implantation and the crystal restoration after high temperature annealing. Hall effect measurements revealed that the sample annealed at 1600°C achieved a higher activity ratio and a lower resistivity, which satisfied the application of numerous SiC-based devices .

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“…Phosphorus is the preferred n-type dopant in SiC because of its higher solubility limit in SiC than that of nitrogen, which cannot be incorporated in excess of 3 ϫ 10 19 cm −3 due to precipitation during postimplantation annealing. 9,10 Aluminum is a popular acceptor in SiC due to its lower ionization energy compared to other acceptors such as B and Ga. 11 In this work, annealing in an inert ambient solved the oxidation problem, allowing for high-temperature ͑ϳ2100°C͒ annealing and yielding very low sheet resistances and very high carrier mobilities in implanted 4H-SiC. The principal aim of this work is obtaining near virgin lattice quality and high sheet carrier concentration in implanted 4H-SiC using high annealing temperatures for 5 -60 s.…”

Section: Introductionmentioning

confidence: 99%

Ultrahigh-temperature microwave annealing of Al+- and P+-implanted 4H-SiC

Sundaresan

Rao

Tian³

et al. 2007

Journal of Applied Physics

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In this work, an ultrafast solid-state microwave annealing has been performed, in the temperature range of 1700–2120°C on Al+- and P+-implanted 4H-SiC. The solid-state microwave system used in this study is capable of raising the SiC sample temperatures to extremely high values, at heating rates of ∼600°C∕s. The samples were annealed for 5–60s in a pure nitrogen ambient. Atomic force microscopy performed on the annealed samples indicated a smooth surface with a rms roughness of 1.4nm for 5×5μm2 scans even for microwave annealing at 2050°C for 30s. Auger sputter profiling revealed a <7nm thick surface layer composed primarily of silicon, oxygen, and nitrogen for the samples annealed in N2, at annealing temperatures up to 2100°C. X-ray photoelectron spectroscopy revealed that this surface layer is mainly composed of silicon oxide and silicon nitride. Secondary ion mass spectrometry depth profiling confirmed almost no dopant in diffusion after microwave annealing at 2100°C for 15s. However, a sublimation of ∼100nm of the surface SiC layer was observed for 15s annealing at 2100°C. Rutherford backscattering spectra revealed a lattice damage-free SiC material after microwave annealing at 2050°C for 15s, with scattering yields near the virgin SiC material. Van der Pauw–Hall measurements have revealed sheet resistance values as low as 2.4kΩ∕◻ for Al+-implanted material annealed at 2100°C for 15s and 14Ω∕◻ for the P+-implanted material annealed at 1950°C for 30s. The highest electron and hole mobilities measured in this work were 100 and 6.8cm2∕Vs, respectively, for the P+- and Al+-implanted materials.

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Al, B, and Ga ion-implantation doping of SiC

Cited by 32 publications

References 30 publications

White light emission of wide‐bandgap silicon carbide: A review

White light emission of wide‐bandgap silicon carbide: A review

Annealing effects on structural, optical and electrical properties of Al implanted 4H-SiC

Ultrahigh-temperature microwave annealing of Al+- and P+-implanted 4H-SiC

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