Al composition dependence of breakdown voltage in AlxGa1−xN Schottky rectifiers

Zhang, A. P.; Dang, G.; Ren, F.; Han, Jung; Polyakov, A. Y.; Smirnov, N. B.; Говорков, А. В.; Redwing, Joan M.; Cao, X. A.; Pearton, S. J.

doi:10.1063/1.126161

Cited by 53 publications

(32 citation statements)

References 14 publications

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“…This is fully adequate for many device applications such as AlGaN Schottky rectifiers. 51 The knowledge of the aluminium composition x here is of great importance. It can be determined accurately using Eqn.…”

Section: Influence Of the Aluminium Composition On Raman Modesmentioning

confidence: 99%

Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control

Kuball

2001

Surface & Interface Analysis

341

127

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The use of micro-Raman spectroscopy to monitor non-invasively GaN, AlGaN and AlN material parameters for process and growth monitoring/control is demonstrated. Concepts to determine the crystalline quality, the stress, the free carrier concentration, the aluminium composition and the temperature from the Raman modes are reviewed. Raman monitoring of processing and growth is illustrated on selected examples: the high-temperature processing of ion-implanted and non-implanted GaN layers, the Raman monitoring of AlGaN/GaN heterostructure field-effect transistors and the in situ Raman monitoring of GaN growth at elevated temperatures. Ultraviolet Raman spectroscopy has been employed to characterize material properties of GaN surface layers and GaN/AlGaN interfaces. Raman mapping is illustrated on bulk AlN crystals to investigate stress fields related to growth striations and defects.

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Section: Influence Of the Aluminium Composition On Raman Modesmentioning

confidence: 99%

Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control

Kuball

2001

Surface & Interface Analysis

341

127

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“…In switching devices, the higher electrical breakdown field (Ec of GaN = 3.3 MV/cm compared to Ec of AlN = 11.7 MV/cm) of AlGaN is also an advantage. Increased breakdown voltage has been achieved with assistance of Al incorporation [1,2]. However, it is still difficult to grow high quality AlGaN because native AlN substrates are still under development even though impressive progress has been achieved these days [3].…”

mentioning

confidence: 99%

AlGaN‐based heterostructures grown on 4 inch Si(111) by MOVPE

Cheng

Leys

Derluyn

et al. 2008

Phys. Status Solidi (c)

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AlGaN is an important material for ultra‐violet light emitters, photo detectors and high breakdown voltage switching devices. In this work, crack‐free AlxGa1‐xN (5% < x < 55%) layers up to 1.5 μm have been grown on 4 inch Si(111) using an AlN/AlyGa1‐yN (y > 70%) template. The structural quality of AlGaN layers is comparable to that of GaN layers grown on silicon(111). For Al0.16Ga0.84N, the FWHM of HR‐XRD (0002) and (‐1102) ω‐scan is around 650 arc sec and 1200 arc sec respectively. Based on this high quality AlGaN buffer, a double heterostructure (DH) FET was demonstrated. The sheet resistance of DH‐FET is 274 ± 4.7 Ω/□ and the uniformity value of 1.7% is also excellent. Some of the wafers have been processed. Devices with a gate length of 2 μm showed current density of 500 mA/mm and transconductance of more than 200 mS/mm. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…[58] AlGaN rectifiers produced even higher V B values, reaching 4.3 kV for Al 0.25 -Ga 0.75 N active layers. [59] Since this type of device is intended for elevated temperature operation, there is a need to understand the current transport mechanisms, the origin of the reverse leakage current, and the magnitude and sign of the temperature coefficient for V RB . Over a broad range of voltages, the reverse leakage current is proportional to the diameter of the rectifying contact indicating that surface periphery leakage current is the dominant contributor.…”

Section: Gan and Algan Schottky Rectifiersmentioning

confidence: 99%

GaN Electronics

2000

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An overview is presented of progress in GaN electronic devices for high‐power, high‐temperature applications. The wide bandgaps of the nitride materials, their excellent transport properties, and the availability of heterostructures (e.g., GaN/AlGaN) make them ideal candidates for these applications. In the past few years a wide range of devices have been reported, including heterostructure field effect transistors (HFETs), heterojunction bipolar transistors (HBTs), bipolar junction transistors (BJTs), Schottky and p–i–n rectifiers, and metal–oxide–semiconductor field effect transistors (MOSFETs). Some of the unexpected features of GaN‐based electronics include the ability to use piezoelectrically induced carriers for current transport in heterostructures and the sensitivity of the GaN surface to preferential loss of nitrogen during device processing.

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Al composition dependence of breakdown voltage in AlxGa1−xN Schottky rectifiers

Cited by 53 publications

References 14 publications

Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control

Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control

AlGaN‐based heterostructures grown on 4 inch Si(111) by MOVPE

GaN Electronics

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