Al-doped ZnO powdered materials: Al solubility limit and IR absorption properties

Serier, Hélène; Gaudon, Manuel; Ménétrier, Michel

doi:10.1016/j.solidstatesciences.2009.03.007

Cited by 131 publications

(112 citation statements)

References 18 publications

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“…However we have to note, that the integration of solid-state 27 Al-NMR spectra signals does not provide reliable quantitative data. For all probes we identified amounts smaller 0.2 at.% for Al4 sub that is in accordance with the findings of Avadhut et al [25] and other authors who identified just small amounts of in ZnO solubilized aluminum by 27 Al-NMR [24,28,32]. With increasing hydration ratio the amount of crystalline located aluminum decreases from 0.15 at.% to 0.05 at.% Al and the amount for amorphous located aluminum increases from 1.85 at.% up to 1.95 at.% Al.…”

Section: Incorporation Of Aluminum In Zno and Electrical Properties Osupporting

confidence: 92%

Polyol synthesized aluminum doped zinc oxide nanoparticles - influence of the hydration ratio on crystal growth, dopant incorporation and electrical properties

Straube

Linders

Mayer‐Gall

et al. 2017

Materials Today: Proceedings

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The wet chemical deposition of solution processed transparent conducting oxides (TCO) provides an alternative low cost and economical deposition technique to realize large-areas of conducting films. Since the price for the most common TCO Indium Tin Oxide rises enormously, Aluminum Zinc Oxide (AZO) as alternative TCO reaches more and more interest. The optoelectronical properties of nanoparticle coatings strongly depend beneath the porosity of the coating on the shape and size of the used particles. By using bigger or rod-shaped particles it is possible to minimize the amount of grain boundaries resulting in an improvement of the electrical properties, whereas particles bigger than 100 nm should not be used if highly transparent coatings are necessary as these big particles scatter the visible light and lower the transmittance of the coatings. In this work we present a simple method to synthesize AZO particles with different shape and size, but comparable electronical properties. We use a simple, well reproducible polyol method for synthesis and influence the shape and size of the particles by adding different amounts of water to the precursor solution. We can show that the addition of aluminum as dopant strongly hinders the crystal growth but the addition of water counteracts this, so that both, spherical and rod-shaped particles can be obtained.

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Section: Incorporation Of Aluminum In Zno and Electrical Properties Osupporting

confidence: 92%

Polyol synthesized aluminum doped zinc oxide nanoparticles - influence of the hydration ratio on crystal growth, dopant incorporation and electrical properties

Straube

Linders

Mayer‐Gall

et al. 2017

Materials Today: Proceedings

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show abstract

“…In comparison with other findings, 23,25 Fig . 8 presents the high-resolution O 1s spectrum acquired on 0.5 at% ZnO:Al spherical nanocrystals.…”

Section: Resultsmentioning

confidence: 50%

“…54 We therefore infer that the tetrahedrally coordinated Al, incorporated in the spherical particles, has taken substitutional positions and hence has created extra free charge carriers that can increase the conductivity of the material. 23 Likewise, the absence of the additional broad absorption band in the nanorod shaped particles, with a much lower tetrahedral Al fraction can then Percentage [4] Al and [6] Al in the nano-equiaxed series (a) and the nanorod series (b). 27 Al-NMR spectra of the 0.5 and 5% Al-doped ZnO powders are shown in the insets.…”

Section: Resultsmentioning

confidence: 99%

“…27 The octahedral coordination, where the Al 3+ ion behaves as an acceptor, would decrease conductivity. 23,25,28 Thus, the Al 3+ dopant should be placed in a substitutional, tetrahedral position to effectively modify the electronic properties of the ZnO host material. Even though the Al 3+ ion is smaller than the Zn 2+ ion, it has a preference for the octahedral site in most Al-containing oxides.…”

Section: Introductionmentioning

confidence: 99%

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Relation between synthesis conditions, dopant position and charge carriers in aluminium-doped ZnO nanoparticles

et al. 2013

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“…Most works consider aluminium substituting for zinc (Al Zn ) to be a likely defect impinging thus the material band-gap. Neutral defects involving three Zn 2+ cations replaced by two Al 3+ cations and a compensation cationic vacancy and acting as electrons traps have also been discussed [73]. Recently published micro-Raman, X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE) analyses of Al:ZnO films prepared by co-sputtering of ZnO and Al at moderate temperatures (RT-188 • C) [74] indicate that the incorporated host-atoms are Al 3+ species in Zn 2+ substitutional position and their amount increases following a direct monotonic trend with the deposition temperature.…”

Section: Optical Characterization Ofmentioning

confidence: 99%

Optimization of Electrochemically Deposited Highly Doped ZnO Bilayers on Ga-Rich Chalcopyrite Selenide for Cost-Effective Photovoltaic Device Technology

et al. 2016

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High quality polycrystalline bilayers of aluminium doped ZnO (Al:ZnO) were successively electrodeposited in the form of columnar structures preferentially oriented along the 1011 crystallographic direction from aqueous solution of zinc nitrate (Zn(NO 3 ) 2 ) at negative electrochemical potential of E C = (−0.8)-(−1.2) V and moderate temperature of 80 • C on gallium rich (30% Ga) chalcopyrite selenide Cu(In,Ga)Se 2 (CIGS) with chemically deposited ZnSe buffer (ZnSe/Cu(In,Ga)Se 2 /Mo/glass). The aluminium doped ZnO layer properties have initially been probed by deposition of Al:ZnO/i-ZnO bilayers directly on Mo/glass substrates. The band-gap energy of the Al:ZnO/i-ZnO reference layers was found to vary from 3.2 to 3.7 eV by varying the AlCl 3 solute dopant concentration from 1 to 20 mM. The electrical resistivity of indium-pellet contacted highly doped Al:ZnO sheet of In/Al:ZnO/i-ZnO/Mo/glass reference samples was of the order ρ~10 −5 Ω·cm; the respective carrier concentration of the order 10 22 cm −3 is commensurate with that of sputtered Al:ZnO layers. For crystal quality optimization of the bilayers by maintenance of the volatile selenium content of the chalcopyrite, they were subjected to 2-step annealing under successive temperature raise and N 2 flux regulation. The hydrostatic compressive strain due to Al 3+ incorporation in the ZnO lattice of bilayers processed successively with 5 and 12 mM AlCl 3 dopant was ε h = −0.046 and the respective stress σ h = −20 GPa. The surface reflectivity of maximum 5% over the scanned region of 180-900 nm and the (optical) band gap of E g = 3.67 eV were indicative of the high optical quality of the electrochemically deposited (ECD) Al:ZnO bilayers.

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Al-doped ZnO powdered materials: Al solubility limit and IR absorption properties

Cited by 131 publications

References 18 publications

Polyol synthesized aluminum doped zinc oxide nanoparticles - influence of the hydration ratio on crystal growth, dopant incorporation and electrical properties

Polyol synthesized aluminum doped zinc oxide nanoparticles - influence of the hydration ratio on crystal growth, dopant incorporation and electrical properties

Relation between synthesis conditions, dopant position and charge carriers in aluminium-doped ZnO nanoparticles

Optimization of Electrochemically Deposited Highly Doped ZnO Bilayers on Ga-Rich Chalcopyrite Selenide for Cost-Effective Photovoltaic Device Technology

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