Al-enhanced N incorporation in GaNAs alloys grown by chemical beam epitaxy

Kolhatkar, Gitanjali; Boucherif, Abderraouf; Valdivia, Christopher E.; Wallace, Steven G.; Fafard, S.; Aimez, Vincent; Arès, Richard

doi:10.1016/j.jcrysgro.2013.06.024

Cited by 8 publications

(3 citation statements)

References 31 publications

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“…19 Another limitation is due to the large miscibility gap of GaN x As 1Àx , causing a spinodal decomposition driven phase separation for high N concentrations, resulting in the formation of GaN clusters. 20,21 In recent work, we showed that the use of a low aluminum (Al) concentration (o15%) significantly increases the N incorporation efficiency 22 due to the preferential formation of Al-N bonds over Ga-N bonds. [23][24][25][26][27] Furthermore, using absorption measurements, we reported that Al y Ga 1Ày N x As 1Àx alloys with an Al concentration of 15% or less follow the band anticrossing model, 28 and that with these low Al concentrations, the desired bandgap of B1 eV will be reached using less nitrogen precursor than that in GaN x As 1Àx .…”

Section: Introductionmentioning

confidence: 99%

Composition variation in Al-based dilute nitride alloys using apertureless scanning near-field optical microscopy

Kolhatkar

Boucherif

Dab

et al. 2016

Phys. Chem. Chem. Phys.

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We use apertureless scanning near-field optical microscopy to study the phase separation in chemical beam epitaxy grown AlGaNAs alloys. Pits attributed to nitrogen-clustering observed on the AlGaNAs surface grown at 420 °C become larger at higher growth temperatures, and 3D islands appear on the surface at 565 °C. Atomic force microscopy phase measurements reveal a composition difference between the islands and the pits, whereas the sample grown at 420 °C appears to be homogeneous. Confocal Raman spectra show that all the N atoms are bonded to Al instead of Ga. Using apertureless scanning near-field optical microscopy, the luminescence of a gold tip is mapped over the surface of the sample grown at 565 °C. We extract the shift of the tip's surface plasmon resonance and determine the variation in the refractive index between the islands and the pits to be close to 0.2. Numerical simulations of the tip luminescence while in contact with the sample predict a similar variation of ∼0.3 in the refractive indices between AlGaAs islands and AlN pits, a substantially smaller value than the difference in the bulk refractive indices of the two media (∼1.8), which we attribute to a convolution of material distribution in an uneven topography. The excellent agreement between simulation and experiments supports the hypothesis of nitrogen-clustering in the pits.

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Section: Introductionmentioning

confidence: 99%

Composition variation in Al-based dilute nitride alloys using apertureless scanning near-field optical microscopy

Kolhatkar

Boucherif

Dab

et al. 2016

Phys. Chem. Chem. Phys.

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“…An important limitation to the growth of high quality dilute nitrides originates from the poor incorporation efficiency of N, necessitating a high nitrogen precursor flux to reach even low N concentrations (<3%). We reported in our previous studies that the addition of a low aluminium (Al) concentration (<15%) significantly increases the N incorporation efficiency and distributes the N atoms in the layer more homogeneously due to the preferential formation AlN bonds over GaN bonds . A study of the optical properties of AlGaNAs alloys also revealed that they follow the band anticrossing model and that using a low Al concentration, the desired bandgap will be reached using less N‐precursor than in GaNAs .…”

Section: Introductionmentioning

confidence: 99%

Electrical and structural properties of AlGaNAs alloys grown by chemical beam epitaxy

Kolhatkar

Boucherif

Bioud

et al. 2016

Physica Status Solidi (b)

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We correlate the structural properties of aluminium‐based dilute nitrides to their electrical properties. The effect of annealing on the carrier density and the mobility is measured on chemical beam epitaxy grown Al0.05Ga0.95N0.005As0.995 alloys. Both parameters increase with the annealing temperature due to the disappearance of N–C and N–H–VGa complexes. After annealing, a mobility of 60 cm2 V−1s−1 for a hole concentration of 1 × 1019 cm−3 are measured, which is similar to the values reported on GaAs with the same carrier concentration.

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“…Due to those advantages of MOVPE technique, some attempts to improve optical quality of QW grown by MOVPE have been done. Moreover, it has been shown that the quality of sample grown by MOVPE can be comparable to MBE samples [31,[49][50][51][52][53]. However, the optical properties of dilute nitrides material have been mainly studied for structures grown by MBE.…”

Section: Introductionmentioning

confidence: 99%

Nitrogen-related changes in exciton localization and dynamics in GaInNAs/GaAs quantum wells grown by metalorganic vapor phase epitaxy

et al. 2014

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In this work, we show the results of low-temperature photoluminescence (PL), time-resolved photoluminescence, and photoreflectance (PR) investigations, performed on a series of three Ga 0.64 In 0.34 As 1-x N x /GaAs single quantum wells (SQW) grown by metalorganic vapor phase epitaxy with the nitrogen content of 0, 0.5, and 0.8 %. Comparing the PL and PR data, we show that at low excitation intensity and temperature, the radiative recombination occurs via localizing centers (LCs) in all samples. The excitation intensity-dependent PL measurements combined with theoretical modeling of hopping excitons in this system allow us to provide quantitative information on the disorder parameters describing population of LCs. It has been found that the average energy of LCs increases about two times and simultaneously the number of LCs increases about 10 and 20 times after the incorporation of 0.5 and 0.8 % of nitrogen, respectively. The value of average localization energy e 0 determined for N-containing samples (*6-7 meV) is in the range typical for dilute nitride QWs grown by molecular beam epitaxy (MBE). On the other hand, the ''effective'' concentration of LCs seems to be higher than for GaInNAs/GaAs QW grown by MBE. The dramatic increase in localizing centers also affects the PL dynamics. Observed PL decay time dispersion is much stronger in GaInNAs SQW than in nitrogen-free SQW. The change in PL dynamic is very well reproduced by model of hopping excitons.

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Al-enhanced N incorporation in GaNAs alloys grown by chemical beam epitaxy

Cited by 8 publications

References 31 publications

Composition variation in Al-based dilute nitride alloys using apertureless scanning near-field optical microscopy

Composition variation in Al-based dilute nitride alloys using apertureless scanning near-field optical microscopy

Electrical and structural properties of AlGaNAs alloys grown by chemical beam epitaxy

Nitrogen-related changes in exciton localization and dynamics in GaInNAs/GaAs quantum wells grown by metalorganic vapor phase epitaxy

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