Al-foil-based low-loss coplanar waveguides directly bonded to sapphire substrates

Matsuura, Keita; Liang, Jianbo; Maezawa, Koichi; Shigekawa, Naoteru

doi:10.7567/ssdm.2017.j-7-03

Cited by 4 publications

(2 citation statements)

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“…Joints of single crystals of metals (4) and those of deposited metal films (5) were made by low-temperature bonding after activating their surfaces, i.e., by employing surface activated bonding (SAB) technologies. We fabricated ultra-thick Schottky contacts (6) and low-loss coplanar waveguide circuits (7) by bonding several-ten-μm thick Al foils to SiC epi layers and sapphire substrates, respectively. In this work, we fabricated a ceramic plate/metal/ceramic plate junction and a SiC die/metal/ceramic plate junction using SAB.…”

Section: Introductionmentioning

confidence: 99%

Electrical Characteristics of Solder-Free SiC Die/Metal Foil/AlN Plate Junctions Fabricated Using Surface Activated Bonding

2018

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SiC die/Al foil/AlN junctions are successfully fabricated by using surface activated bonding, i.e., without using solders. No structural defects are observed in Al/AlN interfaces. We measure current-voltage characteristics of Schottky diodes, which are fabricated on the SiC die before bonding, by applying bias voltages between Schottky contacts and the surface of Al foil that is connected to ohmic contacts. Schottky diodes normally operate at junction temperatures up to 300 °C. No change is observed in appearance of the SiC die/Al foil/AlN junction even after the measurement at 300 °C. Parasitic resistances get larger after the measurement at 300 °C, which is assumed to be due to the possible oxidation of surfaces of Al foil.

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Section: Introductionmentioning

confidence: 99%

Electrical Characteristics of Solder-Free SiC Die/Metal Foil/AlN Plate Junctions Fabricated Using Surface Activated Bonding

2018

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“…We also bonded Al foils with t of 17 μm to sapphire substrates and fabricated CPWs and inductors. 21,22) Their RF characteristics outperformed those of components made by evaporating Al layers with a thickness of 1 μm. We recently fabricated CPWs on HR Si substrates by directly bonding Al foils and examined their RF characteristics.…”

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confidence: 99%

Low-loss characteristics of coplanar waveguides fabricated by directly bonding metal foils to high-resistivity Si substrates

Yonekura¹,

Kawamoto²,

Liang³

et al. 2022

Jpn. J. Appl. Phys.

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Coplanar waveguides (CPWs) are fabricated by directly bonding 17-m Al foils to Si substrates with different resistivities and wet etching. Their RF characteristics are compared with those of CPWs fabricated on 0.8-m thick evaporated Al layers. A lower insertion loss is observed for Si substrates with higher resistivity irrespective of thickness of conductors because the substrate loss is decreased. For a 10000-Ω·cm Si substrate, Al-foil-based CPWs reveal a ∼0.7-dB/cm lower insertion loss in comparison with evaporated-Al-based CPWs at 1 GHz. These features agree with calculation, which implies the superiority of direct bonding of metal foils for realizing low-loss passive components.

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Low-Loss Characteristics of Metal-Foil-Based Passive Components by Surface-Activated Bonding Technologies

Matsuura

Liang

Maezawa

et al. 2019

IEEE Trans. Electron Devices

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Al-foil-based low-loss coplanar waveguides directly bonded to sapphire substrates

Cited by 4 publications

References 0 publications

Electrical Characteristics of Solder-Free SiC Die/Metal Foil/AlN Plate Junctions Fabricated Using Surface Activated Bonding

Electrical Characteristics of Solder-Free SiC Die/Metal Foil/AlN Plate Junctions Fabricated Using Surface Activated Bonding

Low-loss characteristics of coplanar waveguides fabricated by directly bonding metal foils to high-resistivity Si substrates

Low-Loss Characteristics of Metal-Foil-Based Passive Components by Surface-Activated Bonding Technologies

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