Al(Ga)N/GaN high electron mobility transistors on silicon

Cordier, Y.

doi:10.1002/pssa.201532070

Cited by 15 publications

(17 citation statements)

References 53 publications

(75 reference statements)

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“…Recently, the III‐nitride semiconductors have attracted an increasing interest due to their excellent properties and broad applications in high‐brightness, high‐frequency, and high‐power devices . Many researches have focused on the photoelectric properties of GaN, but the mechanical properties of GaN have not been paid much attention to .…”

Section: Introductionmentioning

confidence: 99%

Anisotropic Fracture Toughness of Bulk GaN

Cheng

Cai

Wang

et al. 2017

Physica Status Solidi (b)

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The wurtzite structure of GaN determines its anisotropic mechanical properties, which is significant in the processes of material preparation and application. By using nanoindentation method, the fracture toughnesses along the c‐, a‐, and m‐planes of GaN were measured. Experimental results reveal that the fracture toughnesses along nonpolar m‐ and a‐planes are similar, 1.55 ± 0.13 MPa · m1/2 and 1.59 ± 0.12 MPa · m1/2, respectively, but obviously smaller than the value of c‐plane, about 2.12 ± 0.21 MPa · m1/2. This could be understood by the differences of GaN bond densities and energies among the corresponding planes. Using first‐principles calculations, the fracture toughness of GaN under different stress states was investigated within the framework of density functional theory. The anisotropic property that the fracture toughness for c‐plane GaN is higher than that of a‐ or m‐plane GaN for all cases of stress states, should be the fundamental reason for the great difficulty in complete separation of thick GaN films, which is the key process in manufacturing GaN substrates.

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Section: Introductionmentioning

confidence: 99%

Anisotropic Fracture Toughness of Bulk GaN

Cheng

Cai

Wang

et al. 2017

Physica Status Solidi (b)

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“…The desorption of Ga and Al species is negligible when AlGaN is grown at 800°C with a large ammonia flow rate, so that composition and growth rate calibrations are more easy. More, at such temperature, AlGaN does not relax the strain via composition modulations, which is a noticeable advantage compared to MOVPE …”

Section: Molecular Beam Epitaxymentioning

confidence: 99%

Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

Cordier

Comyn

Frayssinet

et al. 2017

Physica Status Solidi (a)

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Despite the fact that a lower growth temperature is generally considered as a drawback for achieving high crystal quality, the necessity to reduce the nucleation temperature of AlN on Silicon has permitted Molecular Beam Epitaxy (MBE) to demonstrate high performance for GaN transistors operating at high frequency. Compared to Metal‐Organic Vapor Phase Epitaxy (MOVPE), the control of the interface between the AlN nucleation layer and the substrate is easier and the reduced growth temperature allows to obtain a more electrically resistive interface while keeping good crystal quality. Moreover, it is shown that further reducing the growth temperature within the nucleation and stress mitigating layers has a noticeable impact on the lateral and vertical buffer leakage currents. At the same time the buffer of MBE grown HEMT structures exhibits low RF propagation losses (below 0.5 dB mm−1 up to 70 GHz). Also, results obtained with structures regrown by MOVPE on MBE AlN‐on‐Si templates confirm that the thermal budget is critical for the resistivity of AlN/Si. On the other hand, the insertion of a 1.5 μm thick Al0.05Ga0.95N layer within a 2 μm HEMT structure significantly improves the vertical breakdown voltage up to 740 V permitting to compare favorably with MOVPE epilayers with similar total thickness.

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“…As the third generation of semiconductor, GaN‐based materials have achieved a great success in the fields of optoelectronics and microelectronics, such as light emitting diodes (LEDs), laser diodes (LDs), high‐voltage and high‐frequency power devices, and so on. Recently, there is a growing concern over the ultraviolet photodetectors (UV‐PDs) based on AlGaN ternary alloy material, because of its wide direct band gap, full solid‐state, intrinsic cut‐off that makes it filter‐free, and the potential applications in flame/engine monitoring and detection, ozone layer monitoring, missile warning and guidance, free‐space optical communication, and chemical/biological agent sensing .…”

Section: Introductionmentioning

confidence: 99%

The Influence of n‐AlGaN Inserted Layer on the Performance of Back‐Illuminated AlGaN‐Based p‐i‐n Ultraviolet Photodetectors

Chen

Zhang

et al. 2017

Physica Status Solidi (a)

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In this paper, comparison between back‐illuminated p‐i‐n AlGaN‐based ultraviolet photodetectors (UV‐PDs) with and without an n‐AlGaN inserted layer is carried out. The results show that the introduction of n‐AlGaN interlayer significantly reduces the dark current of AlGaN‐based UV‐PDs. The mechanism involved is clarified and can be attributed to the role of n‐AlGaN interlayer which depletes to isolate the leakage paths generated by dislocations of AlGaN material. Besides, it also greatly improves the spectral performances of the p‐i‐n AlGaN‐based UV‐PDs, which can be related to the additional built‐in electric fields introduced by n‐AlGaN inserted layer that contribute to separate and transport the photon‐generated carriers.

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Al(Ga)N/GaN high electron mobility transistors on silicon

Cited by 15 publications

References 53 publications

Anisotropic Fracture Toughness of Bulk GaN

Anisotropic Fracture Toughness of Bulk GaN

Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

The Influence of n‐AlGaN Inserted Layer on the Performance of Back‐Illuminated AlGaN‐Based p‐i‐n Ultraviolet Photodetectors

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