AlX Ga1-XN Cladding Effect on Intraband Absorption of InGaN Disk Embedded in GaN Nanowire

Afroja, Akter; Yoo, Geonwook; Kim, Sangin; Won, Baac Hyoung; Heo, Junseok

doi:10.1166/jnn.2017.14060

Cited by 2 publications

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“…In contrast to the planar heterostructure where misfit strain is relieved by plastic deformation evolving defect formation above the critical thickness, the NW heterostructure allows elastic strain relaxation through free sidewalls that are sufficiently wider with respect to the volume, enabling defect‐free epitaxial growth even in the systems with a high indium concentration. [ 5,6 ] It has been theoretically [ 7 ] predicted and experimentally [ 8 ] verified that the elastic strain relaxation suppresses the piezoelectric polarization fields, which in turn leads to a higher internal quantum efficiency.…”

Section: Introductionmentioning

confidence: 99%

High‐Resolution Mapping of Strain Partitioning and Relaxation in InGaN/GaN Nanowire Heterostructures

et al. 2022

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Growing an In x Ga 1− x N/GaN (InGaN/GaN) multi‐quantum well (MQW) heterostructure in nanowire (NW) form is expected to overcome limitations inherent in light‐emitting diodes (LEDs) based on the conventional planar heterostructure. The epitaxial strain induced in InGaN/GaN MQW heterostructure can be relaxed through the sidewalls of NW, which is beneficial to LEDs because a much larger misfit strain with higher indium concentration can be accommodated with reduced piezoelectric polarization fields. The strain relaxation, however, renders highly complex strain distribution within the NW heterostructure. Here the authors show that complementary strain mapping using scanning transmission electron microscopy and dark‐field inline holography can comprehend the strain distribution within the axial In 0.3 Ga 0.7 N/GaN MQW heterostructure embedded in GaN NW by providing the strain maps which can cover the entire NW and fine details near the sidewalls. With the quantitative evaluation by 3D finite element modelling, it is confirmed that the observed complex strain distribution is induced by the strain relaxation leading to the strain partitioning between InGaN quantum disk, GaN quantum well, and the surrounding epitaxial GaN shell. The authors further show that the strain maps provide the strain tensor components which are crucial for accurate assessment of the strain‐induced piezoelectric fields in NW LEDs.

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Section: Introductionmentioning

confidence: 99%

High‐Resolution Mapping of Strain Partitioning and Relaxation in InGaN/GaN Nanowire Heterostructures

et al. 2022

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Mid-infrared photon sensing using InGaN/GaN nanodisks via intersubband absorption

Zhang

Afroja

Kum

et al. 2022

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Intersubband (intraband) transitions allow absorption of photons in the infrared spectral regime, which is essential for IR-photodetector and optical communication applications. Among various technologies, nanodisks embedded in nanowires offer a unique opportunity to be utilized in intraband devices due to the ease of tuning the fundamental parameters such as strain distribution, band energy, and confinement of the active region. Here, we show the transverse electric polarized intraband absorption using InGaN/GaN nanodisks cladded by AlGaN. Fourier transform infrared reflection (FTIR) measurement confirms absorption of normal incident in-plane transverse electric polarized photons in the mid-IR regime (wavelength of ~ 15 μm) at room temperature. The momentum matrix of the nanodisk energy states indicates electron transition from the ground state s into the px or py orbital-like excited states. Furthermore, the absorption characteristics depending on the indium composition and nanowire diameter exhibits tunability of the intraband absorption spectra within the nanodisks. We believe nanodisks embedded nanowires is a promising technology for achieving tunable detection of photons in the IR spectrum.

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Al_X Ga_1-XN Cladding Effect on Intraband Absorption of InGaN Disk Embedded in GaN Nanowire

Cited by 2 publications

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High‐Resolution Mapping of Strain Partitioning and Relaxation in InGaN/GaN Nanowire Heterostructures

High‐Resolution Mapping of Strain Partitioning and Relaxation in InGaN/GaN Nanowire Heterostructures

Mid-infrared photon sensing using InGaN/GaN nanodisks via intersubband absorption

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