Al<sub>0.18</sub>Ga<sub>0.82</sub>N/GaN Two-Dimensional Electron Gas-Based Ultraviolet Photodetectors With Symmetrical Interdigitated Structure

Gu, Yan; Xie, Feng; Fan, Qigao; Jiang, Xuecheng; Guo, Jiarui; Xie, Zhijian; Zhang, Qi; Zhang, Xiumei; Yang, Guofeng

doi:10.1109/ted.2022.3221356

Cited by 7 publications

(2 citation statements)

References 41 publications

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“…Due to the strong polarization effects, high-concentration and high-mobility two-dimensional electron gases (2DEGs) often exist at the AlGaN/GaN heterojunction interface, which is quite beneficial to collect the photocurrent for high responsivity. − Recently, several studies of PDs based on AlGaN/GaN 2DEGs have been reported. − However, the 2DEG channel is naturally normally on even in the dark condition, which leads to high power consumption, low phototo-dark current ratio (PDCR) and poor detectivity. Several methods have been proposed to suppress the dark current for PDs, such as p-GaN gate, , semitransparent gate contact, p-oxide transparent gate, gate recessed .…”

Section: Introductionmentioning

confidence: 99%

Ultrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistors

Wang,

Feng,

Zhong

et al. 2023

ACS Photonics

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In this work, high-performance ultraviolet (UV) photodetectors (PDs) based on an AlGaN/GaN double-channel high-electron-mobility transistor (HEMT) were fabricated and investigated using 360 nm illumination. The design of the novel device structure introduces double two-dimensional electron gas channels, which remarkably improve the effectiveness in the collection of photogenerated carriers and make it work as a twoterminal normally off device. The device exhibited a high responsivity of 2.1 × 10 7 A/W and a high specific detectivity of 1.7 × 10 15 Jones under the illumination of 9.7 μW/cm 2 , indicating the excellent capability of detecting an ultraweak signal. Meanwhile, a distinguished transient performance was also observed when it operated under 500 Hz pulse illumination. Combining fabrication conciseness and outstanding performance advantages, the proposed AlGaN/GaN double-channel HEMT UV PD shows promising potential in the development of next-generation UV PDs.

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Section: Introductionmentioning

confidence: 99%

Ultrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistors

Wang,

Feng,

Zhong

et al. 2023

ACS Photonics

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“…by the increasing demand for UV sensors in various applications, including environmental monitoring, industrial inspection, and biomedical sensing [15], [16]. One of the recent developments in AlGaN UV PDs is the use of nanowires as the active sensing element [17].…”

Section: Background and Motivationmentioning

confidence: 99%

AlGaN/GaN HEMT-based ultraviolet photodetectors with enhanced device efficiency

Ahmed

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Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning

Razeen,

Kotekar‐Patil,

Jiang

et al. 2024

Adv Materials Inter

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AlGaN/GaN High Electron Mobility Transistor (HEMT) structures offer superior electrical and material properties that make them ideal for the fabrication of high‐performance Ultraviolet photodetectors (UV PDs), especially using the metal‐semiconductor‐metal (MSM) configuration. However, the metal layout of the MSM design and crystal defects in multi‐stack HEMTs can reduce photocurrent and degrade device performance. Nano‐structuring of the AlGaN/GaN surface with different nanofeatures is a promising approach to improve light absorption efficiency and increase device response. In this work, AlGaN/GaN HEMT MSM UV photodetectors with enhanced performance parameters by engineering the surface with periodic nanohole arrays are demonstrated. Optical simulations are used to optimize the design of the nanoholes' periodicity and depth. Unpatterned and nanohole‐patterned devices with varying nanohole depths are fabricated, and their performance shows substantial enhancement with the incorporation of nanoholes. The device with 40 nm deep nanoholes and 230 nm array periodicity shows the highest performance in terms of photocurrent (0.15 mA), responsivity (1.4 × 105 A W−1), UV/visible rejection ratio (≈103), and specific detectivity (4.9 × 1014 Jones). These findings present a HEMT‐compatible strategy to enhance UV photodetector performance for power optoelectronic applications, highlighting that nanohole patterning is a promising prospect for advancements in UV photodetection technology.

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Al_0.18Ga_0.82N/GaN Two-Dimensional Electron Gas-Based Ultraviolet Photodetectors With Symmetrical Interdigitated Structure

Cited by 7 publications

References 41 publications

Ultrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistors

Ultrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistors

AlGaN/GaN HEMT-based ultraviolet photodetectors with enhanced device efficiency

Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning

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Al0.18Ga0.82N/GaN Two-Dimensional Electron Gas-Based Ultraviolet Photodetectors With Symmetrical Interdigitated Structure

Cited by 7 publications

References 41 publications

Ultrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistors

Ultrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistors

AlGaN/GaN HEMT-based ultraviolet photodetectors with enhanced device efficiency

Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning

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Product

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Al_0.18Ga_0.82N/GaN Two-Dimensional Electron Gas-Based Ultraviolet Photodetectors With Symmetrical Interdigitated Structure