Al2O3-SiO2IGFET integrated circuits

Cheney, G. T.; Jacobs, Ryan; Korb, H. W.; Nigh, H. E.; Stach, Jan

doi:10.1109/t-ed.1968.16206

IEEE Trans. Electron Devices

1968

DOI: 10.1109/t-ed.1968.16206

|View full text |Cite

Al₂O₃-SiO₂IGFET integrated circuits

G. T. Cheney¹,

Ryan Jacobs²,

H. W. Korb³

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1968

2015

Publication Types

Select...

Article3

Relationship

Self Cite0

Independent3

Authors

Journals

Cited by 3 publications

(1 citation statement)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The interest in aluminum oxide films stems from the following experimental observations: the ionic mobility of impurities (Na +) is very low in these films (1), their radiation resistance is high compared to silicon dioxide films (2), and their dielectric constant is double that of silicon dioxide (3). These films are also of interest in double layer (SIO2-A1203) structures where they act as effective junction seals (4) and also offer a possible method of controlling the threshold voltage of IGFET devices (5) due to the presence of a "contact potential" at the silicon dioxidealuminum oxide interface.…”

mentioning

confidence: 99%

RF Sputtered Aluminum Oxide Films on Silicon

Salama

1970

J. Electrochem. Soc.

View full text Add to dashboard Cite

The physical and electrical properties of aluminum oxide films deposited on silicon by rf sputtering from an alumina target in an argon atmosphere were investigated as a function of sputtering power density in the range from 0.5 to 3 W/cm2. The deposition rates ranged from 20 to 80 Aå/min. The density, index of refraction, and dielectric constant of the films increased while the etch rate decreased with increasing power density. The surface charge at the aluminum oxide‐silicon interface was typically larger than 1012 e/cm2. This charge increased with increasing sputtering power density and could be reduced to 7–8×1011 normale/cm2 by annealing. The films exhibited trapping instabilities at room temperature but no polarization was observed under bias‐temperature stress. The characteristics of composite layers of thermally grown silicon dioxide and sputtered aluminum oxide layers on silicon were also investigated and found to exhibit low surface charge densities, no hysteresis, and a “contact potential” as well as charge stored at the interface between the two insulators.

show abstract

mentioning

confidence: 99%

RF Sputtered Aluminum Oxide Films on Silicon

Salama

1970

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

Robust Mechanical Properties of Electrically Insulative Alumina Films by Supersonic Aerosol Deposition

Lee¹,

You²,

Kim³

et al. 2015

J Therm Spray Tech

View full text Add to dashboard Cite

Additional bibliography of metal—Insulator—Semiconductor studies

Schlegel¹

1968

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Al₂O₃-SiO₂IGFET integrated circuits

Cited by 3 publications

References 2 publications

RF Sputtered Aluminum Oxide Films on Silicon

RF Sputtered Aluminum Oxide Films on Silicon

Robust Mechanical Properties of Electrically Insulative Alumina Films by Supersonic Aerosol Deposition

Additional bibliography of metal—Insulator—Semiconductor studies

Contact Info

Product

Resources

About