Al/Ti Ohmic Contacts to p-Type Ion-Implanted 6H-SiC: Mono- and Two- Dimensional Analysis of TLM Data

Moscatelli, F.; Scorzoni, A.; Poggi, Antonella; Cardinali, G.C.; Nipoti, Roberta

doi:10.4028/www.scientific.net/msf.433-436.673

Cited by 8 publications

(6 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A typical problem of the Al/Ti alloyed contact annealed in Ar is the oxidation of the pad top surface [9]. Such an oxide is hard to remove and makes difficult the wafer level characterisation of the devices.…”

Section: Discussionmentioning

confidence: 99%

Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H- and 6H-SiC.

et al. 2002

Self Cite

View full text Add to dashboard Cite

Al-Ti alloys with 72 wt% Al were employed for the realisation of ohmic contacts on 4×1019 cm-3 p-type ion implanted 4H- and 6H-SiC samples. Contact resistivity characterisations by TLM measurements were done at wafer level in the temperature range 28–290°C. Analysis of the TLM measurements took into account current crowding at the metal pads. More than half of the evaluated contact resistivity reached the minimum value detectable by the used TLM devices, that was slightly higher than 1×10-6 Ωcm2. Above this limit value, contact resistivity decreased for increasing temperature and was spread over a few decades. The maximum contact resistivity at 28°C was 2×10-4 Ωcm2, which changed to 5×10-6 Ωcm2 at 290°C. The thermal behaviour of these TLM structures featured thermionic-field emission conduction.

show abstract

Section: Discussionmentioning

confidence: 99%

Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H- and 6H-SiC.

et al. 2002

Self Cite

View full text Add to dashboard Cite

show abstract

“…Thus, lateral current crowding at the metal pads was taken into account within the framework of a 2D approximation. In particular, the resistance measurements on TLM structures were analyzed accounting for two-dimensional (2D) [5,6] and three-dimensional (3D) [7] current flow, as it is described in [4,8,9]. remark the data of the implanted specimens fall in a region where ρ c is expected to be highly sensitive to a small variation of the surface doping concentration.…”

Section: Methodsmentioning

confidence: 99%

Contact Resistivity and Barrier Height of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiC

Scorzoni¹,

Moscatelli

Poggi

et al. 2004

MSF

Self Cite

View full text Add to dashboard Cite

Recently, the Al-Ti alloy with the 70 wt% Al was found to give the most reproducible contact resistivity ρ c on epitaxial and implanted p-type SiC after vacuum annealing at 1000°C for 2 min. In this work contact resistivity values of this Al-Ti alloy are analyzed aiming at extracting the Schottky barrier height with particular attention to p-type ion implanted 4H-and 6H-SiC specimens. The ρ c values extracted from Transmission Line Method measurements were always lower than 2×10 -4 Ωcm 2 for a medium/high doping concentration of the implanted layers, i.e. 4×10 19 cm -3 . Moreover, a significant portion of values below the minimum resolution of 1×10 -6 Ωcm 2 was found. The barrier height φ B has been extracted from the contact resistivity as a function of the temperature, according to the thermionic-field emission model, for all the dies featuring a ρ c greater than the minimum resolution. For these dies the φ B is (0.53±0.05) eV for the 6H-SiC epilayer, (0.82±0.08) eV for the implanted 4H-SiC and (0.95±0.08) eV for the implanted 6H-SiC. It was found that the dies which have a ρ c minor than the minimum resolution could feature a barrier height similar to that found on the epilayer.

show abstract

“…The manufacturing process of p-SiC is relatively mature [18], with an ionized concentration reaching 1 × 10 19 cm −3 , and it can meet the working requirements of IM devices. That is why this paper proposes a new type of p-SiC/n-GaN DDR IMPATT which opts for p-SiC instead of p-GaN to construct the p-type avalanche and drift re Since there is not much difference between the bandgap widths of SiC and that o material, each close to 3.4 eV, the heterojunction interface formed by SiC and GaN h significant effect on the discontinuity of the energy band.…”

Section: Simulation Models and Methodsmentioning

confidence: 99%

“…The manufacturing process of p-SiC is relatively mature [ 18 ], with an ionized hole concentration reaching 1 × 10 19 cm −3 , and it can meet the working requirements of IMPATT devices. That is why this paper proposes a new type of p-SiC/n-GaN DDR IMPATT diode, which opts for p-SiC instead of p-GaN to construct the p-type avalanche and drift regions.…”

Section: Introductionmentioning

confidence: 99%

Study of p-SiC/n-GaN Hetero-Structural Double-Drift Region IMPATT Diode

Dai

Dang

et al. 2021

Micromachines

View full text Add to dashboard Cite

Nowadays, the immature p-GaN processes cannot meet the manufacturing requirements of GaN impact ionization avalanche transit time (IMPATT) diodes. Against this backdrop, the performance of wide-bandgap p-SiC/n-GaN heterojunction double-drift region (DDR) IMPATT diode is investigated in this paper for the first time. The direct-current (DC) steady-state, small-signal and large-signal characteristics are numerically simulated. The results show that compared with the conventional GaN single-drift region (SDR) IMPATT diode, the performance of the p-SiC/n-GaN DDR IMPATT proposed in this design, such as breakdown voltage, negative conductance, voltage modulation factor, radio frequency (RF) power and DC-RF conversion efficiency have been significantly improved. At the same time, the structure proposed in this design has a larger frequency bandwidth. Due to its greater potential in the RF power density, which is 1.97 MW/cm2 in this study, indicates that the p-SiC/n-GaN heterojunction provides new possibilities for the design and manufacture of IMPATT diode.

show abstract

Al/Ti Ohmic Contacts to p-Type Ion-Implanted 6H-SiC: Mono- and Two- Dimensional Analysis of TLM Data

Cited by 8 publications

References 9 publications

Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H- and 6H-SiC.

Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H- and 6H-SiC.

Contact Resistivity and Barrier Height of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiC

Study of p-SiC/n-GaN Hetero-Structural Double-Drift Region IMPATT Diode

Contact Info

Product

Resources

About