Al x Ga1-x N solar-blind photodetectors grown by low pressure MOCVD

Wang, Xiaoyan; Wang, Xiaoliang; Wang, Baozhu; Ran, Junxue; Xiao, Hongling; Wang, Cuimei; Hu, Guoxin

doi:10.1007/s12200-009-0006-z

Cited by 7 publications

(21 citation statements)

References 30 publications

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“…In general, the Al x Ga 1− x N layers for MSM device application grow on sapphire substrates via MOCVD, MBE, sputtering method, and metal–organic vapor phase epitaxy (MOVPE) . In order to push forward with the growth of high‐quality Al x Ga 1− x N layers and also to promote the adhesion between the layers and substrates, GaN or AlN layers with thickness of tens to hundreds of nanometers were often employed as buffer or nucleation layers . It has been found that with the increase of x value, the peak response as well as the cutoff wavelengths of the MSM photodetectors manifested obvious blue transfer to shorter wavelength, an indicative of variation in the Al x Ga 1− x N bandgap.…”

Section: Iii‐nitride Compoundsmentioning

confidence: 99%

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Xie

Tong

et al. 2019

Adv Funct Materials

410

261

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Due to its significant applications in many relevant fields, light detection in the solar-blind deep-ultraviolet (DUV) wavelength region is a subject of great interest for both scientific and industrial communities. The rapid advances in preparing high-quality ultrawide-bandgap (UWBG) semiconductors have enabled the realization of various high-performance DUV photodetectors (DUVPDs) with different geometries, which provide an avenue for circumventing numerous disadvantages in traditional DUV detectors. This article presents a comprehensive review of the applications of inorganic UWBG semiconductors for solar-blind DUV light detection in the past several decades. Different kinds of DUVPDs, which are based on varied UWBG semiconductors including Ga 2 O 3 , Mg x Zn 1−x O, III-nitride compounds (Al x Ga 1−x N/AlN and BN), diamond, etc., and operate on different working principles, are introduced and discussed systematically. Some emerging techniques to optimize device performance are addressed as well. Finally, the existing techniques are summarized and future challenges are proposed in order to shed light on development in this critical research field.with energy much higher than the semiconductor bandgap. Moreover, due to light absorption by the surface passivation layers, typically Si oxide, quantum efficiency in the DUV range is greatly reduced. The passivation layers are also easily degraded by UV illumination. Finally, for highly sensitive UV photodetection, the detectors need to be cooled to reduce dark current; the cooled detectors, however, behave like cold traps for contaminants which degrade the detectivity.In the past two decades, the emergence of UV photodetectors based on wide-bandgap (WBG) semiconductors has opened up an avenue to circumvent the above-mentioned dilemma. The WBG semiconductors such as SiC, GaN, and some group II-V compounds, typically have bandgaps exceeding ≈3.10 eV, enabling room-temperature detectors to possess fast response speed, and offering intrinsic visible-blindness (response cutoff wavelength: ≈400 nm). [14][15][16] Moreover, these semiconductors generally possess significantly higher thermal conductivity than Si, which renders them suitable for operation in harsh environments (e.g., high temperature and high power). The electron velocity of these materials at large electric fields is generally higher than that of common semiconductors, although WBG semiconductors exhibit relatively lower electron and hole mobilities. Compared with the abovementioned conventional WBG semiconductors, ultrawide-bandgap (UWBG) semiconductors, as the next generation of semiconductor materials with bandgaps significantly wider than the 3.4 eV of GaN, are particularly suitable for solar-blind DUV light detection. [17][18][19][20]

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Section: Iii‐nitride Compoundsmentioning

confidence: 99%

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Xie

Tong

et al. 2019

Adv Funct Materials

410

261

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“…These layers contain high densities of screw dislocations (6 x 10 8 cm -2 ) and edge dislocations (2 x 10 9 cm -2 ). Similarly, Al x Ga 1-x N (x = 0.54) films grown on sapphire substrate by low-pressure MOCVD have also been reported [8], and the films exhibited the (00.2) XRD-RC full width at half maximum (FWHM) of about 597 arcsec. It has also been reported that a thick Al x Ga 1-x N (with x = 0.6) layers on low-defect-density bulk AlN substrates could be achieved [9] with a thickness far exceeding the critical thickness as given by the Matthews and Blakeslee model.…”

Section: Introductionmentioning

confidence: 89%

Common issues in the hetero-epitaxial seeding on SiC substrates in the sublimation growth of AlN crystals

Sumathi¹

2021

Appl. Phys. A

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Aluminium nitride (AlN) is a futuristic material for efficient next-generation high-power electronic and optoelectronic applications. Sublimation growth of AlN single crystals with hetero-epitaxial approach using silicon carbide substrates is one of the two prominent approaches emerged, since the pioneering crystal growth work from 1970s. Many groups working on this hetero-epitaxial seeding have abandoned AlN growth altogether due to lot of persistently encountered problems. In this article, we focus on most of the common problems encountered in this process such as macro- and micro-hole defects, cracks, 3D-nucleation, high dislocation density, and incorporation of unintentional impurity elements due to chemical decomposition of the substrate at very high temperatures. Possible ways to successfully solve some of these issues have been discussed. Other few remaining challenges, namely low-angle grain boundaries and deep UV optical absorption, are also presented in the later part of this work. Particular attention has been devoted in this work on the coloration of the crystals with respect to chemical composition. Wet chemical etching gives etch pit density (EPD) values in the order of 105 cm-2 for yellow-coloured samples, while greenish coloration deteriorates the structural properties with EPD values of at least one order more.

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“…Solenoid valve 17 is connected and disconnected according to the signal of the pressure relay, and unloading valve 18 is used in the hydraulic circuit to guarantee safety [5] . [6] [7] …”

Section: Hydraulic System Designmentioning

confidence: 99%

Hydraulic System Design for Earth Brick Press

Zhao¹,

Wei²,

Cun-xiang³

2017

dtetr

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An earth brick press is introduced in this paper. Bake-free bricks produced by this machine are low in cost and environmentally friendly. Moreover, they may be substituted for other building materials required in building breeding sheds and greenhouses. In this paper, calculation and selection of design and type are respectively conducted by introducing the structure and operation of key hydraulic parts for the machine.

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Al x Ga1-x N solar-blind photodetectors grown by low pressure MOCVD

Cited by 7 publications

References 30 publications

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Common issues in the hetero-epitaxial seeding on SiC substrates in the sublimation growth of AlN crystals

Hydraulic System Design for Earth Brick Press

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