Al2O3 coatings against high temperature corrosion deposited by metal-organic low pressure chemical vapour deposition

Corbach, H.D. van; Haanappel, V.A.C.; Fransen, Τ.; Gellings, P.J.

doi:10.1016/0040-6090(94)90104-x

Cited by 12 publications

(5 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Previously employed precursors to Al 2 O 3 have almost always contained an excess of oxygen (or have been used with a second oxygen source such as H 2 O). This is true in some recently reported precursors of the type Al(acac) 3 , Al(OOCR) 3 , and Al(OR) 3 (R = alkyl). These types of precursors, which were all used in the gas phase, have met with a measure of success in the fabrication of aluminum oxide thin films for use as passivating layers and insulating films in electronic devices …”

Section: Introductionmentioning

confidence: 59%

“…The resulting complexes are tetrameric with a core of group 13 element and O atoms in the shape of the emblem of the Mitsubishi company. 7 They are of formula [Al{(µ-OEt) 2 AlR 2 } 3 ], where R ) Me (1), Et (2), i Bu (3), and [Al-{(µ-OEt) 2 GaR 2 } 3 ], where R ) Me (4) and Et (5). Only two such molecules, )SC 4 H 3 ) 2 } 2 AlMe 2 ] 3 ] 8 and [Al{(µ-OR) 2 AlMe 2 } 3 ] (where R ) 10-undecene), 9 have been previously reported.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

TetrametallicD₃-Symmetric Alkoxide Molecules Containing Aluminum

et al. 1999

View full text Add to dashboard Cite

A new series of aluminum alkoxide molecules of formula [Al{(µ-OEt) 2 AlR 2 } 3 ], where R ) Me (1), Et (2), i Bu (3), and [Al{(µ-OEt) 2 GaR 2 } 3 ], where R ) Me (4) and Et (5), have been synthesized and fully characterized. In pure form 1, 2, and 4 are crystalline solids. However, in the presence of a small amount of solvent or impurity all of the compounds exist as oils. They were characterized by 1 H NMR, IR, elemental analysis, mp, and single-crystal X-ray diffractometry for compounds 1, 2, and 4.

show abstract

Section: Introductionmentioning

confidence: 59%

Section: Introductionmentioning

confidence: 99%

TetrametallicD₃-Symmetric Alkoxide Molecules Containing Aluminum

et al. 1999

View full text Add to dashboard Cite

show abstract

“…Unfortunately, MOSFET structures fabricated with Al 2 O 3 as the gate dielectric have exhibited low channel mobilities, possibly due to a large number of trapped charges in the dielectric . Furthermore, aluminum oxide thin films are applicable as corrosion and wear protective coatings, , capacitance dielectrics in DRAM's, and optical multilayer coatings …”

Section: Introductionmentioning

confidence: 99%

A Quantum Chemical Study of the Atomic Layer Deposition of Al₂O₃ Using AlCl₃ and H₂O as Precursors

Heyman

Musgrave

2004

J. Phys. Chem. B

View full text Add to dashboard Cite

Atomic layer deposition (ALD) of alumina (Al2O3) using water and aluminum trichloride (AlCl3) is studied using density functional theory (DFT). The atomistic mechanisms of the two deposition half-cycles on Al2O3−OH* and Al2O3−Cl* surface sites include the formation of stable intermediates and result in high barriers for HCl formation. Increasing the temperature reduces the stability of the intermediates but also increases the desorption rate of adsorbed precursors. Both half-reactions are qualitatively similar to the corresponding reactions of ALD of HfO2 and ZrO2 from H2O and HfCl4 and ZrCl4, respectively, but differ significantly from the reactions of ALD of Al2O3 from Al(CH3)3 and H2O. Although the high electronegativity of Cl increases the stability of the dative-bonded trapped intermediates in the Zr and Hf chloride cases, the inductive effect is stronger for AlCl3, increasing the stability of adsorbed AlCl3 by 29 kcal/mol relative to the adsorption energy of Al(CH3)3. Furthermore, the ligand-exchange barrier is 26 kcal/mol higher for AlCl3 than for Al(CH3)3, thus reducing the reaction kinetics and increasing the ALD temperature for the AlCl3/H2O system. We have also found a new reaction pathway which involves ligand-exchange without metal deposition which we call nongrowth ligand-exchange. This pathway is more competitive in ALD using AlCl3 as the metal precursor than when using Al(CH3)3 and reduces the ALD growth rate. These results provide additional physical insight into the nature of these reaction mechanisms and demonstrate that the Cl ligands have a larger impact on the reaction energetics than the metal atom for the ALD of these high-κ oxides.

show abstract

“…Research on the decomposition of ATSB using a quadrupole mass spectrometer (SpectraMass-Dataquad) was performed by Haanappel 16,11. It was found that the main by-products from the pyrolytic decomposition of ATSB were 2-butanol, 2-butanone, 1-or 2-butene, and n-butane.…”

Section: Mechanistic Aspects Of Oxide Deposition By Mocvdmentioning

confidence: 99%

Formation of Thin Oxide Films by Metal-Organic Chemical Vapour Deposition

Haanappel¹,

Corbach²,

Hofman³

et al. 1996

High Temperature Materials and Processes

View full text Add to dashboard Cite

A summary is given of the metal-organic vapour deposition, performed during the last eight years at the University of Twente (The Netherlands), of thin alumina, silica, and titania films at atmospheric and at low pressure on stainless steels. Alumina films were produced from aluminium-tri-sec-butoxide (ATSB) and aluminium-tri-iso-propoxide (ATI), silica films from di-acetoxy-di-t-butoxy-silane (DADBS), and titania films from titanium-tetra-iso-propoxide (TTIP). These investigations can be separated into a number of projects: 1) mechanistic aspects of the decomposition chemistry of the precursors, 2) kinetics of the deposition processes, 3) chemical properties, and 4) mechanical properties of the thin oxide films.In this paper a summary is presented with respect to the deposition of thin alumina, silica and titania films 245 Brought to you by | Purdue University Libraries Authenticated Download Date | 6/3/15 12:30 AM Vol. 15, No. 4, 1996 Formation of Thin Oxide Films by Metal-Organic Chemical performed at the University of Twente during the last eight years (March 1987-March 1995. In addition to the decomposition mechanisms of several precursors (metal alkoxides, the kinetics of the deposition process and the chemical and mechanical properties of the deposited oxide films are also presented. EXPERIMENTAL PROCEDURES Specimen preparationDepositions were performed on AISI 304 (18% Cr, 8% Ni, 0.08% C, 1% Si, 2% Mn, 71% Fe) and Incoloy 800H (20% Cr, 32% Ni, 0.08% C, 0.5% Si, 0.7% Mn, 0.4% Al, 47% Fe). The samples were cut from an electropolished sheet or were ground on SiC paper with a final size of 4000 grit, followed by a polishing treatment with alumina (3 μπι) and subsequently ultrasonically cleaned for 30 minutes in RBS soap, hexane and ethanol. Finally, the samples were immersed in Struer's etching fluid (5% solution of 3 Μ nitric acid in ethanol) for 15 minutes, washed with pure ethanol and dried in air at room temperature.

show abstract

Al2O3 coatings against high temperature corrosion deposited by metal-organic low pressure chemical vapour deposition

Cited by 12 publications

References 10 publications

TetrametallicD₃-Symmetric Alkoxide Molecules Containing Aluminum

TetrametallicD₃-Symmetric Alkoxide Molecules Containing Aluminum

A Quantum Chemical Study of the Atomic Layer Deposition of Al₂O₃ Using AlCl₃ and H₂O as Precursors

Formation of Thin Oxide Films by Metal-Organic Chemical Vapour Deposition

Contact Info

Product

Resources

About

Al2O3 coatings against high temperature corrosion deposited by metal-organic low pressure chemical vapour deposition

Cited by 12 publications

References 10 publications

TetrametallicD3-Symmetric Alkoxide Molecules Containing Aluminum

TetrametallicD3-Symmetric Alkoxide Molecules Containing Aluminum

A Quantum Chemical Study of the Atomic Layer Deposition of Al2O3 Using AlCl3 and H2O as Precursors

Formation of Thin Oxide Films by Metal-Organic Chemical Vapour Deposition

Contact Info

Product

Resources

About

TetrametallicD₃-Symmetric Alkoxide Molecules Containing Aluminum

TetrametallicD₃-Symmetric Alkoxide Molecules Containing Aluminum

A Quantum Chemical Study of the Atomic Layer Deposition of Al₂O₃ Using AlCl₃ and H₂O as Precursors