Al2O3/HfO2 functional stack films based resistive switching memories with controlled SET and RESET voltages

Chen, Lin; Dai, Yawei; Sun, Qingqing; Guo, Jiaojiao; Zhou, Peng; Zhang, David Wei

doi:10.1016/j.ssi.2014.08.014

Cited by 24 publications

(14 citation statements)

References 8 publications

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“…Among a plethora of different dielectric materials exhibiting resistive switching behavior 13–15 , HfO 2 has received much interest from the scientific community owing to its compatibility with the CMOS technology, low operating voltage, high dielectric constant and high thermodynamic stability 16–18 . Nano-scale HfO 2 based memristors can exhibit either bipolar 17–21 or unipolar 22–25 switching, as well as both behaviors 26 . Their electrical behavior is largely influenced by the choice of top and bottom electrodes (TE and BE respectively), the presence of oxygen vacancy-rich interfacial layers, or the quality of the metal-oxide layer.…”

Section: Introductionmentioning

confidence: 99%

Bipolar Cu/HfO2/p++ Si Memristors by Sol-Gel Spin Coating Method and Their Application to Environmental Sensing

Hadi

Humood

Jaoudé

et al. 2019

Sci Rep

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In this paper, the memristive switching behavior of Cu/ HfO 2 /p ++ Si devices fabricated by an organic-polymer-assisted sol-gel spin-coating method, coupled with post-annealing and shadow-mask metal sputtering steps, is examined. HfO 2 layers of about 190 nm and 80 nm, are established using cost-effective spin-coating method, at deposition speeds of 2000 and 4000 rotations per minute (RPM), respectively. For two types of devices, the memristive characteristics ( V on , I on , and V reset ) and device-to-device electrical repeatability are primarily discussed in correlation with the oxide layer uniformity and thickness. The devices presented in this work exhibit an electroforming free and bipolar memory-resistive switching behavior that is typical of an Electrochemical Metallization (ECM) I-V fingerprint. The sample devices deposited at 4000 RPM generally show less variation in electrical performance parameters compared to those prepared at halved spin-coating speed. Typically, the samples prepared at 4000 RPM (n = 8) display a mean switching voltage V on of 3.0 V (±0.3) and mean reset voltage V reset of −1.1 V (±0.5) over 50 consecutive sweep cycles. These devices exhibit a large R off / R on window (up to 10 4 ), and sufficient electrical endurance and retention properties to be further examined for radiation sensing. As they exhibit less statistical uncertainty compared to the samples fabricated at 2000 RPM, the devices prepared at 4000 RPM are tested for the detection of soft gamma rays (emitted from low-activity Cs-137 and Am-241 radioactive sources), by assessing the variation in the on-state resistance value upon exposure. The analysis of the probability distributions of the logarithmic R on values measured over repeated ON-OFF cycles, before, during and after exposing the devices to radiation, demonstrate a statistical difference. These results pave the way for the fabrication and development of cost-effective soft-gamma ray detectors.

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Section: Introductionmentioning

confidence: 99%

Bipolar Cu/HfO2/p++ Si Memristors by Sol-Gel Spin Coating Method and Their Application to Environmental Sensing

Hadi

Humood

Jaoudé

et al. 2019

Sci Rep

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“…The difference in oxygen vacancy concentration at the interface layers of AlO x /HfO x and HfO x /TiN among the medium resistance state, LRS, and HRS is slightly little. In consequence, during regular operations of synaptic memristors, the formation/rupture of nanoscale conductive filaments tend to appear in the low k AlO x layer with lower electric field intensity [33]. Furthermore, the device conductance can be modulated by the oxygen vacancy drift under pulse electric field, producing a change in the concentration and distribution of oxygen vacancies at the interface of the metal/oxide and the interior.…”

Section: Memristive Mechanismmentioning

confidence: 99%

“…In the LRS of 600 Ω, the conductive filament is thick with the conductance of 22 G 0 , corresponding to a wide conductive filament with classical metallic properties. After 40 pulse stimuli, a medium resistance state of 50 kΩ is obtained with a conductance of 0.26 G 0 , where the conductive filament behaves as a quantum wire, producing a single-defect conducting path [31,33,34].…”

Section: Memristive Mechanismmentioning

confidence: 99%

Artificial Synapses Based on Atomic/Molecular Layer Deposited Bilayer-Structured Memristive Thin Films

Liu¹,

Zhu²,

Wang³

et al. 2021

Memristor - An Emerging Device for Post-Moore’s Computing and Applications

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This chapter deals with several kinds of ultrathin bilayer-structured memristors, such as Pt/Al2O3/HfO2/TiN, Pt/HfO2/HfOx/TiN, Pt/TiO2/Ti-based maleic acid (Ti-MA)/TaN, among which the asymmetric memristive functional layers were designed and prepared by atomic layer deposition (ALD) or molecular layer deposition (MLD) technique. These bilayer memristors exhibit a typical bipolar resistive switching characteristic, in accord with the space charge limited current model. Some important biologic synaptic functions have been achieved, including nonlinear transmission characteristics, spike-timing-dependent plasticity, short−/long-term plasticity, paired-pulse facilitation, and conditioned reflex. The mechanism of bilayer memristive device has been proposed based on oxygen vacancies migration/diffusion model. Above all the ultrathin bilayer memristors fabricated by low temperature ALD/MLD are one competitive candidate for neuromorphic simulation and flexible electronic applications.

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“…Therefore, research has been focused on gaining low-power RRAM devices for symmetric SET/RESET behavior, gradual conductance change, and high synaptic density. Transition metal oxide, mainly based on Al 2 O 3 , HfO 2 , TaO x , ZrO 2 , TiO 2, and their bilayer and tri-layer structure, was shown to be advantageous for industry-friendly electrical devices and improved multilevel resistive switching properties and its application towards synapses for neuromorphic computing [ 10 , 11 , 12 , 13 , 14 , 15 , 16 ].…”

Section: Introductionmentioning

confidence: 99%

Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode

2020

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Atomic layer deposited (ALD) HfO2/Al2O3/HfO2 tri-layer resistive random access memory (RRAM) structure has been studied with a transparent indium tin oxide (ITO) transparent electrode. Highly stable and reliable multilevel conductance can be controlled by the set current compliance and reset stop voltage in bipolar resistive switching. Improved gradual resistive switching was achieved because of the interdiffusion in the HfO2/Al2O3 interface where tri-valent Al incorporates with HfO2 and produces HfAlO. The uniformity in bipolar resistive switching with Ion/Ioff ratio (>10) and excellent endurance up to >103 cycles was achieved. Multilevel conductance levels in potentiation/depression were realized with constant amplitude pulse train and increasing pulse amplitude. Thus, tri-layer structure-based RRAM can be a potential candidate for the synaptic device in neuromorphic computing.

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Al2O3/HfO2 functional stack films based resistive switching memories with controlled SET and RESET voltages

Cited by 24 publications

References 8 publications

Bipolar Cu/HfO2/p++ Si Memristors by Sol-Gel Spin Coating Method and Their Application to Environmental Sensing

Bipolar Cu/HfO2/p++ Si Memristors by Sol-Gel Spin Coating Method and Their Application to Environmental Sensing

Artificial Synapses Based on Atomic/Molecular Layer Deposited Bilayer-Structured Memristive Thin Films

Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode

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