2010
DOI: 10.1016/j.optmat.2010.02.015
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Al2O3 shaped crystals grown under stationary stable state and optical characterizations

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Cited by 12 publications
(6 citation statements)
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“…Sapphire crystals doped by Ti 3+ and Cr 3+ are excellent laser materials. They are used as substrate materials in blue, green, ultraviolet, and white light-emitting diodes (LED) . Chemical simplicity and congruent melting allowed sapphire crystal growth by different technologies including Czochralski (Cz), Kyropoulos (KY), heat exchanger method (HEM), edge defined film fed growth (EFG), and micropulling down (μ-PD). In spite of sapphire properties and the progress in crystal growth technology, it is difficult to shape sapphire because of its high hardness and crystallographic anisotropy related to its hexagonal crystal structure. Therefore, the optimization of controlled crystal growth process and development of new technologies are necessary in order to increase the crystal sizes (production yield), improve the quality, and reduce the cost (crystals and alumina raw materials).…”
Section: Introductionmentioning
confidence: 99%
“…Sapphire crystals doped by Ti 3+ and Cr 3+ are excellent laser materials. They are used as substrate materials in blue, green, ultraviolet, and white light-emitting diodes (LED) . Chemical simplicity and congruent melting allowed sapphire crystal growth by different technologies including Czochralski (Cz), Kyropoulos (KY), heat exchanger method (HEM), edge defined film fed growth (EFG), and micropulling down (μ-PD). In spite of sapphire properties and the progress in crystal growth technology, it is difficult to shape sapphire because of its high hardness and crystallographic anisotropy related to its hexagonal crystal structure. Therefore, the optimization of controlled crystal growth process and development of new technologies are necessary in order to increase the crystal sizes (production yield), improve the quality, and reduce the cost (crystals and alumina raw materials).…”
Section: Introductionmentioning
confidence: 99%
“…The chemical simplicity (Al 2 O 3 ) and congruent melt behavior allow for growing bulk single crystals by several different growth methods . Nowadays, it is possible to grow bulk crystals of diameter higher than 100 mm. Shaped crystals such as plates, rods, tubes, and complex geometries as well as thin fibers of diameter less than 300 μm can be obtained by the edge-defined film-fed growth (EFG) and the micropulling-down (μ-PD) techniques. Regardless of the growth process, some defects are very often observed in the grown crystals. In spite of the improvement of crystal growth technology and the deep knowledge of the physical and physicochemical properties of this simple oxide, it is presently difficult to grow defect-free sapphire crystals.…”
Section: Introductionmentioning
confidence: 99%
“…9,10 The sapphire seed crystal is connected to the melt at the bottom of the Ir capillary die, and the heating power is adjusted until a stable meniscus is formed. 11 Then the molten zone volume and meniscus length are controlled by careful adjustment of the heater power.…”
Section: Methodsmentioning
confidence: 99%