Materials that show various responses to multiple external stimuli enable novel device applications. The behavior of systems with strong coupling between magnetic and electronic degrees of freedom provides both challenges for solid-state theory as well as novel phenomena for applications such as colossal magnetoresistance in perovskite manganites. Similarly, a strong coupling between magnetism and dielectric properties in magnetic insulators or semiconductors should lead to devices based on the magnetodielectric effect, where the dielectric properties can be controlled by a magnetic field. Large magnetic-field-induced changes in the resistivity and dielectric properties of La 2 NiMnO 6 are found at temperatures as high as 280 K. This is a much higher temperature than previously observed for such a coupling between the magnetic, electric, and dielectric properties in a ferromagnetic semiconductor. The ferromagnetism of La 2 NiMnO 6 was confirmed through neutron-diffraction studies. La 2 NiMnO 6 is a rare example of a single-material platform with multiple functions, in which the spins, electric charge, and dielectric properties can be tuned by magnetic and/or electric fields.Spintronics (short for spin electronics) is a new technology that combines electronics with magnetics through the manipulation of electron spins. It offers the potential for nonvolatile memories, faster data processing speeds with less power usage, larger storage densities, and additional functionalities, such as quantum computation, which are not possible with conventional semiconductor devices.[1,2] Present spintronic devices, e.g., the giant magnetoresistor (GMR), used in readhead sensors, consist of ferromagnetic metallic alloys wherein spin-dependent scattering and tunneling effects have been successfully applied for commercial use. However, in order to fully achieve the potential of practical spintronic devices, the next generation of spintronic materials should be based on ambient-temperature ferromagnetic semiconductors or heterostructures incorporating ferromagnetic metals with nonmagnetic semiconductors, which enable their easy integration into existing electronic devices. The search for semiconducting materials that exhibit strong ferromagnetic behavior at or above room temperature has been extremely difficult due to conflicting requirements in the crystal structure, chemical bonding, and electronic properties of semiconductors and ferromagnetic materials. [1,3] Generally, ferromagnetic semiconductors and insulators only exhibit magnetic ordering at very low temperatures, e.g., EuS (Curie temperature, T c = 16 K), [4] EuO (T c = 77 K), [5] CdCr 2 Se 4 (T c = 130 K), [6] BiMnO 3 (T c = 100 K), [7] SeCuO 3 (T c = 25 K), [8] and diluted magnetic semiconductors, such as (Ga,Mn)As, [1] which precludes their use in devices. However, one exception is an ordered double perovskite, La 2 Ni 2+ Mn 4+ O 6 , an apparent ferromagnetic semiconductor that has a Curie temperature very close to room temperature (T c~2 80 K); [9±12] this is in the ra...