ALD and Characterization of Aluminum Oxide Deposited on Si(100) using Tris(diethylamino) Aluminum and Water Vapor

Katamreddy, Rajesh; Inman, Ronald; Jursich, Gregory; Soulet, Axel; Takoudis, Christos G.

doi:10.1149/1.2239258

Cited by 61 publications

(39 citation statements)

References 35 publications

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“…The ALD Al 2 O 3 T-FTIR spectrum (Fig. 1a) shows only a broad absorption band centered at ∼755 cm -1 that is similar in appearance to other reported FTIR spectra for Al 2 O 3 films deposited by ALD [162][163][164] and PECVD [165][166][167] methods. The broad nature of the absorption band shown in Fig.…”

Section: Elemental Composition-supporting

confidence: 84%

“…This is consistent with several other XRD and transmission electron microscope (TEM) investigations of ALD and PEALD Al 2 O 3 where amorphous films have been routinely reported. 18,66,164 In contrast, prior investigations of PEALD AlN have reported the growth of both amorphous 157,158 and poly-crystalline 161,179 films. In this regard, we note that the stoichiometry for previously studied amorphous PEALD AlN films has been reported to be nitrogen-rich, 157,158 which is consistent with our observations.…”

Section: Elemental Composition-mentioning

confidence: 84%

“…1a is generally attributed to unresolved Al-O-Al bending (650-700 cm -1 ) and Al-O stretching (750-850 cm -1 ) bands. [162][163][164][165][166][167] Alternatively, the Al 2 O 3 FTIR absorption band in this range can be interpreted in terms of the Al coordination where the stretching modes for AlO 6 octahedra are expected at 500-750 cm -1 whereas the stretching modes for AlO 4 tetrahedra are expected at 750-850 cm -1 . 154,155 From this perspective, the broad nature for the Al-O absorption band in Fig.…”

Section: Elemental Composition-mentioning

confidence: 99%

See 2 more Smart Citations

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Gaskins

Hopkins

Merrill

et al. 2017

ECS J. Solid State Sci. Technol.

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Atomic layer deposited (ALD) high-dielectric-constant (high-k) materials have found extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic devices. While electrical, optical, and interfacial properties have been the primary consideration for such devices, thermal and mechanical properties are becoming an additional key consideration for many new and emerging applications of ALD high-k materials in electromechanical, energy storage, and organic light emitting diode devices. Unfortunately, a clear correspondence between thermal/mechanical and electrical/optical properties in ALD high-k materials has yet to be established, and a detailed comparison to conventional silicon-based dielectrics to facilitate optimal material selection is also lacking. In this regard, we have conducted a comprehensive investigation and review of the thermal, mechanical, electrical, optical, and structural properties for a series of prevalent and emerging ALD high-k materials including aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), hafnium oxide (HfO 2 ), and beryllium oxide (BeO). For comparison, more established silicon-based dielectrics were also examined, including thermally grown silicon dioxide (SiO 2 ) and plasma-enhanced chemically vapor deposited hydrogenated silicon nitride (SiN:H). We find that in addition to exhibiting high values of dielectric permittivity and electrical resistance that exceed those of SiO 2 and SiN:H, the ALD high-k materials exhibit equally exceptional thermal and mechanical properties with coefficients of thermal expansion ≤ 6 × 10 -6 / • C, thermal conductivites (κ) of 3-15 W/m K, and Young's modulus and hardness values exceeding 200 and 25 GPa, respectively. In many cases, the observed extreme thermal/mechanical properties correlate with the presence of crystallinity in the ALD high-k films. In contrast, some of the electrical and optical properties correlate more strongly with the percentage of ionic vs. covalent bonds present in the high-k film. Overall, the ALD high-k dielectrics investigated concurrently exhibit compelling thermal/mechanical and electrical/optical properties. The drive to reduce gate leakage currents in highly scaled complementary metal-oxide-semiconductor (CMOS) transistors has led to the exploration and development of a wide variety of high-dielectricconstant (high-k) materials to replace silicon dioxide (SiO 2 ) as the insulating gate dielectric material.1-8 Many of these same high-k materials have found additional applications in future non-CMOS logic and memory storage products such as solid-state electrolytes in resistive switching devices, 9,10 tunnel barriers in spin-transport devices, 11 and as a ferroelectric in magnetoelectric devices. While electrical, physical, and thermodynamic properties have clearly been a key consideration in all of the above applications, thermal properties have become an additional important consideration for higk-k dielectrics as aggressive dimensional scaling of devices has created the need to dissipate ...

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Section: Elemental Composition-supporting

confidence: 84%

Section: Elemental Composition-mentioning

confidence: 84%

Section: Elemental Composition-mentioning

confidence: 99%

See 1 more Smart Citation

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Gaskins

Hopkins

Merrill

et al. 2017

ECS J. Solid State Sci. Technol.

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“…39 Katamreddy et al 41 have reported that the absence of the peak at 530 cm may be attributed to Si-O-Si symmetric stretching mode. 40,41 This indicates towards the formation of ultra thin layer of SiO 2 at the Al 2 O 3 /Si interface. The appearance of absorption peak at ∼ 1395 cm In the annealed films, the peaks at 2340 cm is less intense as compared to as-deposited films.…”

mentioning

confidence: 99%

Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation

et al. 2015

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The effect of deposition temperature (Tdep) and subsequent annealing time (tanl) of atomic layer deposited aluminum oxide (Al2O3) films on silicon surface passivation (in terms of surface recombination velocity, SRV) is investigated. The pristine samples (as-deposited) show presence of positive fixed charges, QF. The interface defect density (Dit) decreases with increase in Tdep which further decreases with tanl up to 100s. An effective surface passivation (SRV<8 cm/s) is realized for Tdep ≥ 200 °C. The present investigation suggests that low thermal budget processing provides the same quality of passivation as realized by high thermal budget process (tanl between 10 to 30 min).

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“…16,44 The broad peak at a maximum wavenumber of around 670 cm À1 consists of O-Al-O bending modes (650 cm À1 À 700 cm À1 ), Al-O stretching modes for Al-O in octahedral matrices (400 cm À1 À530 cm À1 ), and Al-O stretching modes in tetrahedral and octahedral matrices (750 cm À1 À 850 cm À1 ). [45][46][47][48][49][50] The peak around 900 cm À1 À 1300 cm À1 is assigned to Si-O and O-Si-O stretching modes and optical phonon modes. [50][51][52][53] At around 1300 cm À1 À 1750 cm À1 , the two peaks can be related to asymmetric vibration modes of H-O-H; O-C-O, and C ¼ O.…”

Section: Resultsmentioning

confidence: 99%

A study on Si/Al2O3 paramagnetic point defects

Kühnhold-Pospischil

Saint‐Cast

Hofmann

et al. 2016

Journal of Applied Physics

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In this contribution, negative charges and electronic traps related to the Si=Al 2 O 3 interface were measured and related to paramagnetic point defects and molecular vibrations. To this end, contactless capacitance voltage measurements, X-band electron paramagnetic resonance (EPR), and infrared spectroscopy were carried out, and their results were compared. A change in the negative charge density and electron trap density at the Si=Al 2 O 3 interface was achieved by adding a thermally grown SiO 2 layer with varying thicknesses and conducting an additional temperature treatment. Using EPR, five paramagnetic moments were detected in Si=ðSiO 2 Þ=Al 2 O 3 samples with g values of g 1 ¼ 2:008160:0002; g 2 ¼ 2:005460:0002; g 3 ¼ 2:000360:0002; g 4 ¼ 2:002660:0002, and g 5 ¼ 2:002960:0002. Variation of the Al 2 O 3 layer thickness shows that paramagnetic species associated with g 1 , g 2 , and g 3 are located at the Si=Al 2 O 3 interface, and those with g 4 and g 5 are located within the bulk Al 2 O 3 . Furthermore, g 1 , g 2 , and g 3 were shown to originate from oxygen plasma exposure during Al 2 O 3 deposition. Comparing the g values and their location within the Si=Al 2 O 3 system, g 1 and g 3 can be attributed to P b0 centers, g 3 to Si dangling bonds (Si-dbs), and g 4 and g 5 to rotating methyl radicals. All paramagnetic moments observed in this contribution disappear after a 5-min temperature treatment at 450 C. The deposition of an additional thermal SiO 2 layer between the Si and the Al 2 O 3 decreases the negative fixed charge density and defect density by about one order of magnitude. In this contribution, these changes can be correlated with a decrease in amplitude of the Si-db signal. P b0 and the methyl radical signals were less affected by this additional SiO 2 layer. Based on these observations, microscopic models for the negative fixed charge density (Q tot ) and the interface trap density (D it ) and the connection between these values are proposed. Published by AIP Publishing. [http://dx

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ALD and Characterization of Aluminum Oxide Deposited on Si(100) using Tris(diethylamino) Aluminum and Water Vapor

Cited by 61 publications

References 35 publications

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation

A study on Si/Al2O3 paramagnetic point defects

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