ALD grown zinc oxide with controllable electrical properties

Guziewicz, E.; Godlewski, M.; Wachnicki, Ł.; Krajewski, T.; Luka, G.; Gierałtowska, S.; Jakieła, R.; Stonert, A.; Lisowski, Wojciech; Krawczyk, M.; Sobczak, Janusz W.; Jabłoński, A.

doi:10.1088/0268-1242/27/7/074011

Cited by 144 publications

(107 citation statements)

References 62 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Another peak at ca. 532.3 eV can be interpreted as the O-H bond, which is typically produced in each half ALD-cycle [17,16,20]. A similar bond was also reported in the PE-ALD of other metal oxides such as Al2O3 [21].…”

Section: Zno Thin Filmssupporting

confidence: 66%

“…The reduction of the O-H peak is accompanied by a significant increase of the third peak at ca. 531.3 eV which can be assigned to the oxygen interstitial (O2 2− ) [17,16,20]. This suggests that more O2 2− or VO defects are generated with longer O2 plasma times while the formation of both the stoichiometric Zn-O bond and the O-H bond are suppressed.…”

Section: Zno Thin Filmsmentioning

confidence: 98%

See 1 more Smart Citation

Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition

Huang

Kiang

Morgan

et al. 2016

Microelectronic Engineering

View full text Add to dashboard Cite

Undoped ZnO thin films with tunable electrical properties have been achieved by adjusting the O2 plasma time in the plasma enhanced atomic layer deposition process. The structural, compositional and electrical properties of the deposited ZnO films were investigated by various characterization techniques. By tuning the plasma exposure from 2 to 8 s, both resistivities and carrier concentrations of the resultant ZnO films can be modulated by up to 3 orders of magnitude. Forming-free TiN/ZnO/TiN resistive memory devices have been achieved by choosing the ZnO film with the plasma exposure time of 6 s. This deposition method offers a great potential for producing other un-doped metal oxides with tunable properties as well as complex multilayer structures in a single deposition.

show abstract

Section: Zno Thin Filmssupporting

confidence: 66%

Section: Zno Thin Filmsmentioning

confidence: 98%

Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition

Huang

Kiang

Morgan

et al. 2016

Microelectronic Engineering

View full text Add to dashboard Cite

show abstract

“…24 Spectral photoluminescence (PL) characteristics obtained from 42-nm-thick ZnO layer deposited at 80 C on double side polished quartz revealed that ZnO film has a broad PL spectrum centered around 600 nm (2.07 eV). 8 Through these defect states, ZnO can absorb photons with energy lower than its bandgap energy (3.37 eV).…”

Section: B Optical Characterization Of Zno Tftsmentioning

confidence: 99%

Low temperature atomic layer deposited ZnO photo thin film transistors

Oruc¹,

Aygün²,

Dönmez³

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

ZnO thin film transistors (TFTs) are fabricated on Si substrates using atomic layer deposition technique. The growth temperature of ZnO channel layers are selected as 80, 100, 120, 130, and 250°C. Material characteristics of ZnO films are examined using x-ray photoelectron spectroscopy and x-ray diffraction methods. Stoichiometry analyses showed that the amount of both oxygen vacancies and interstitial zinc decrease with decreasing growth temperature. Electrical characteristics improve with decreasing growth temperature. Best results are obtained with ZnO channels deposited at 80°C; Ion/Ioff ratio is extracted as 7.8 × 109 and subthreshold slope is extracted as 0.116 V/dec. Flexible ZnO TFT devices are also fabricated using films grown at 80°C. ID-VGS characterization results showed that devices fabricated on different substrates (Si and polyethylene terephthalate) show similar electrical characteristics. Sub-bandgap photo sensing properties of ZnO based TFTs are investigated; it is shown that visible light absorption of ZnO based TFTs can be actively controlled by external gate bias. © 2014 American Vacuum Society

show abstract

“…Stoichiometry measurements by X-ray photoelectron spectroscopy (XPS) were also performed [19]. These investigations show the presence of N, C, and hydrogen in the ZnO lms.…”

Section: Composition Analysis Of Zno Layers On Simentioning

confidence: 99%

RBS/Channeling Analysis of Zinc Oxide Films Grown at Low Temperature by Atomic Layer Deposition

et al. 2013

View full text Add to dashboard Cite

The results of the Rutherford backscattering/channeling study of ZnO layers are presented. ZnO layers were deposited on the silicon single crystals and GaN epitaxial layers at low temperature by atomic layer deposition. Deposition temperature varied between 100 and 300• C. A random spectra analysis was performed to determine layer thickness and composition. In turn, analysis of the aligned spectra allows us to study evolution of ingrown defects. The Rutherford backscattering study supports the results of X-ray photoelectron spectroscopy measurements, performed separately, that the ZnO-ALD layers deposited at low temperature contain a higher oxygen content. Composition measurements, performed as a function of growth temperature, show that oxygen content decreases with the increasing temperature of the atomic layer deposition growth process.

show abstract

ALD grown zinc oxide with controllable electrical properties

Cited by 144 publications

References 62 publications

Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition

Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition

Low temperature atomic layer deposited ZnO photo thin film transistors

RBS/Channeling Analysis of Zinc Oxide Films Grown at Low Temperature by Atomic Layer Deposition

Contact Info

Product

Resources

About