ALD Resist Formed by Vapor-Deposited Self-Assembled Monolayers

Hong, Junsic; Porter, David W.; Sreenivasan, R.; McIntyre, Paul C.; Bent, Stacey F.

doi:10.1021/la0606401

Cited by 66 publications

(88 citation statements)

References 35 publications

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“…ALD, with its capability for atomic‐level thickness control and conformal coverage over very demanding 3D nanoscale topography, is emerging with a major role in nanotechnology. It has already been applied to coating of nanoparticles,28–31 carbon nanotube electronics,32–34 and energy systems, and interest is increasing in the use of selective ALD 35, 36. Dozens of different ALD process chemistries have been identified,37–42 which place a premium on rapid characterization and understanding of ALD process performance and material quality as realized in nanostructure devices.…”

Section: Discussionmentioning

confidence: 99%

TEM‐Based Metrology for HfO₂ Layers and Nanotubes Formed in Anodic Aluminum Oxide Nanopore Structures

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Robertson

Banerjee

et al. 2008

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Nanotubes are fabricated by atomic layer deposition (ALD) into nanopore arrays created by anodic aluminum oxide (AAO). A transmission electron microscopy (TEM) methodology is developed and applied to quantify the ALD conformality in the nanopores (thickness as a function of depth), and the results are compared to existing models for ALD conformality. ALD HfO2 nanotubes formed in AAO templates are released by dissolution of the Al2O3, transferred to a grid, and imaged by TEM. An algorithm is devised to automate the quantification of nanotube wall thickness as a function of position along the central axis of the nanotube, by using a cylindrical model for the nanotube. Diffusion-limited depletion occurs in the lower portion of the nanotubes and is characterized by a linear slope of decreasing thickness. Experimentally recorded slopes match well with two simple models of ALD within nanopores presented in the literature. The TEM analysis technique provides a method for the rapid analysis of such nanostructures in general, and is also a means to efficiently quantify ALD profiles in nanostructures for a variety of nanodevice applications.

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Section: Discussionmentioning

confidence: 99%

TEM‐Based Metrology for HfO₂ Layers and Nanotubes Formed in Anodic Aluminum Oxide Nanopore Structures

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Robertson

Banerjee

et al. 2008

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“…To address this limitation, several researchers have investigated the formation of SAMs by vapor-phase deposition [50,52,62,[102][103][104][105]. The vapor phase provides several advantages over a liquid-phase process.…”

Section: Vapor-phase Depositionmentioning

confidence: 99%

“…Hong et al studied the use of vapor-deposited ODTS, tridecafluoro-1,1,2,2-tetrahydrooctyltrichlorosilane (FOTS), and 1-octadecene as deactivation layers for ALD [50]. The ODTS and FOTS were used to form SAMs on OH-terminated silicon oxide surfaces while 1-octadecene was used to form monolayers on H-terminated silicon surfaces.…”

Section: Vapor-phase Depositionmentioning

confidence: 99%

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Nanopatterning by Area‐Selective Atomic Layer Deposition

Lee

Bent

2011

Atomic Layer Deposition of Nanostructured Materials

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In conventional device fabrication, patterning is a top-down process based largely on photolithography and etching and is a main bottleneck for device downscaling. Atomic layer deposition (ALD) can provide an alternative bottom-up method for patterning when used in conjunction with self-assembled materials and selective chemistries. As presented in previous chapters, ALD is a powerful technique for depositing thin films for nanoscale device fabrication thanks to its excellent conformality, atomic scale thickness controllability, and large-area uniformity. Film growth controlled by surface reactions is one of the inherent properties of ALD. Because in an ideal ALD process, all of the precursors used for ALD react with each other only at the surface, highly conformal films can be deposited even inside complex 3D structures. By taking advantage of this inherent surface reaction property, ALD can be utilized for patterning based on a bottom-up process. In the following chapter, selective deposition methods will be presented. The contents include the surface modification techniques that are employed to exploit the surface reaction properties of ALD and related patterning processes with reported results. Concept of Area-Selective Atomic Layer DepositionFilm growth by ALD begins with formation of nuclei through a reaction of precursor molecules and surface species. Once nuclei are formed on a surface, the growth of the film may proceed by growth and coalescence of the nuclei, whereas if no nucleation occurs no film will be deposited. Therefore, the deposition characteristics of ALD strongly depend on the surface properties of the substrate. For example, in many cases, the nucleation of ALD is easy on hydrophilic OH-terminated substrates (e.g., SiO 2 ), while it is difficult on hydrophobic H-terminated surfaces (e.g., Si) [1][2][3][4]. Similarly, a nucleation delay in ALD, typically called the incubation time, is due to difficulty of nucleation at the surface. The nucleation delay and the variability of the growth characteristics depending on the surface can be problematic in typical thin

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“…The inhibition of ALD growth can be achieved by the use of self-assembled monolayers 55 (SAMs) as well as polymers. 56,57 The inhibition by SAMs is likely due to removal of surface-reactive sites by attachment of a chemically inert monolayer, although effects of monolayer chain length suggest that prevention of precursor diffusion is an important feature.…”

Section: Patterning and Circuitsmentioning

confidence: 99%

Thin-film electronics by atomic layer deposition

Levy¹,

Nelson²

2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inEffect of Al concentration on Al-doped ZnO channels fabricated by atomic-layer deposition for top-gate oxide thin-film transistor applications Low temperature atomic layer deposited Al-doped ZnO thin films and associated semiconducting properties High performance thin film transistor with low temperature atomic layer deposition nitrogen-doped ZnO Atomic layer deposition (ALD) produces conformal films with low defects and a high degree of thickness control. Many applications leverage these properties to yield excellent dielectrics and barrier layers. In recent years, ALD has been exploited to produce thin-film transistors, in which the technique is capable of producing all of the layers required, including the semiconductor. This perspective will examine the state-of-the-art use of ALD to produce thin-film electronics, notably the zinc oxide-based thin-film transistor. It is critical that the ZnO-based semiconductor material have sufficiently high resistivity in order to yield transistors with low off current and good switching characteristics. The nature of this problem and the approaches used to address it will be discussed. The use of rapid deposition technologies, such as spatial ALD, also has a strong impact on the quality of the ZnO semiconductor. Finally, demonstrations of various thin film electronics devices and systems produced by ALD will be reviewed.

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ALD Resist Formed by Vapor-Deposited Self-Assembled Monolayers

Cited by 66 publications

References 35 publications

TEM‐Based Metrology for HfO₂ Layers and Nanotubes Formed in Anodic Aluminum Oxide Nanopore Structures

TEM‐Based Metrology for HfO₂ Layers and Nanotubes Formed in Anodic Aluminum Oxide Nanopore Structures

Nanopatterning by Area‐Selective Atomic Layer Deposition

Thin-film electronics by atomic layer deposition

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ALD Resist Formed by Vapor-Deposited Self-Assembled Monolayers

Cited by 66 publications

References 35 publications

TEM‐Based Metrology for HfO2 Layers and Nanotubes Formed in Anodic Aluminum Oxide Nanopore Structures

TEM‐Based Metrology for HfO2 Layers and Nanotubes Formed in Anodic Aluminum Oxide Nanopore Structures

Nanopatterning by Area‐Selective Atomic Layer Deposition

Thin-film electronics by atomic layer deposition

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TEM‐Based Metrology for HfO₂ Layers and Nanotubes Formed in Anodic Aluminum Oxide Nanopore Structures

TEM‐Based Metrology for HfO₂ Layers and Nanotubes Formed in Anodic Aluminum Oxide Nanopore Structures