AlGaAs/GaAs wire and box structures prepared by molecular-beam epitaxial regrowth on <i>in</i> <i>situ</i> patterned GaAs substrates

López, Máximo; Tanaka, Natsumi; Matsuyama, I.; Ishikawa, T.

doi:10.1063/1.116500

Cited by 12 publications

(6 citation statements)

References 9 publications

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“…Utilizing the latter approach, all in situ fabrication of quantum wires and quantum boxes has been realized via the sizereducing nature of growth on appropriately oriented mesa tops. 15,16 Central to the mesa top size reduction during growth is a preferential migration of adatoms from the mesa sidewalls to the mesa top observed for certain combinations of the mesa edge and sidewall orientation and the kinetics of growth. 1 The differential growth rate thus achieved between the mesa tops and the sidewalls controls the degree of spatial selectivity in the growth of the nanostructure quantum well and barrier layers and hence the degree of the quantum confinement of the electronic states.…”

Section: Introductionmentioning

confidence: 98%

“…1 Photolithography followed by wet chemical etching has been the most common choice for ex situ patterning of substrates into stripe mesas 1-9 and square mesas 9,10 for realization of quantum wires and quantum boxes, respectively. Novel lithographic approaches using focused ion beams 11,12 or focused electron beams [13][14][15][16] combined with native ultrathin oxide as a mask, have been utilized for in situ patterning of the substrates. Utilizing the latter approach, all in situ fabrication of quantum wires and quantum boxes has been realized via the sizereducing nature of growth on appropriately oriented mesa tops.…”

Section: Introductionmentioning

confidence: 99%

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Focused ion beam assisted chemically etched mesas on GaAs(001) and the nature of subsequent molecular beam epitaxial growth

Kalburge¹,

Konkar²,

Ramachandran³

et al. 1997

Journal of Applied Physics

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Focused ion beam assisted chemical etching is examined as an ultrahigh vacuum compatible in situ direct-write approach to patterning substrates to create mesas with arbitrary shapes (i.e., sidewall angles) independent of crystallographic orientation. Ga+ ion beam assisted Cl2 etching of GaAs(001) is employed as a vehicle. A phenomenological model is used to predict mesa profiles as a function of ion beam conditions. Mesas created under various conditions are characterized via atomic force microscopy and good agreement is found between the measured and predicted profiles. Examination of the growth profile evolution on such mesas with as-patterned sidewall angles between ∼10° and ∼60° reveal that mesa top size reduction suitable for nanostructure fabrication on stripes oriented along the [11̄0] and [100] directions occurs only for as-patterned mesa sidewall angles greater than ∼19° and ∼45°, respectively, which are the angles subtended by the {114} and {101} facets that emerge during growth and cause mesa top pinch-off for the two mesa stripe orientations, respectively. An as-patterned surface roughness in the sidewall and valley regions of ∼20 nm is found to heal with typically ∼50 nm of GaAs buffer growth via molecular beam epitaxy. Cross-section transmission electron microscope studies evidence the high quality of growth on the mesas and the lack of extended defects in the as-patterned substrate as well as in the overlayers, thus making such in situ prepared mesas suitable for creation of nanostructures via the technique of size-reducing epitaxy.

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Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Focused ion beam assisted chemically etched mesas on GaAs(001) and the nature of subsequent molecular beam epitaxial growth

Kalburge¹,

Konkar²,

Ramachandran³

et al. 1997

Journal of Applied Physics

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“…The growth of GaAs/AlGaAs structures on a patterned substrate has attracted much attention to fabricate quantum nano and/or micro structures [1][2][3]. In the growth of compound semiconductors on a facetted structure, the inter-surface diffusion of chemical species makes an important role to determine the growth process.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of coupled quantum disks on a patterned substrate by MBE

Yamaguchi¹,

Higuchi²,

Nishimoto³

et al. 2005

AIP Conference Proceedings

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A coupled quantum disk, where two kinds of rectangular disks are connected by a narrow stripe, was fabricated on a patterned substrate with molecular beam epitaxy. The samples were characterized with cathode luminescence (CL) spectra. We found that the spectral peak wavelength depends on size of the square disk. Even if the large disk is excited, we observed the luminescence from not only the large disk but also from the small disk. This suggests the transport of carriers between the disks via the narrow stripe.

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“…There have been sev-eral reports on 3D-confined structures fabricated by this growth method. [10][11][12][13][14][15][16] Madhukar, Rajkumar, and Chen obtained evidence of 3D-confined structures with lateral sizes down to about 50 nm by observing cross sections of grown pyramidal structures with a transmission electron microscope. 10,13 The cathodoluminescence ͑CL͒ spectra of the 3D-confined structures indicated their high-optical quality.…”

Section: Introductionmentioning

confidence: 99%

Sharp luminescent lines from single three-dimensionally confined GaAs/AlAs structures grown on a patterned GaAs substrate

et al. 1999

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We report extremely sharp lines of photoluminescence ͑PL͒ and photoluminescence excitation ͑PLE͒ spectra from single three-dimensionally confined GaAs/AlAs structures grown on square mesas patterned onto a GaAs substrate. The single structures, which had a 10-nm vertical thickness and a 0.2-m lateral width, were measured at 8 K by microphotoluminescence. At high-excitation power, the PL and PLE spectra of the single structures exhibited broad exciton peaks several meV wide. However, when the excitation power was lowered, each heavy-hole exciton peak in the PL and PLE spectra became a series of sharp lines whose widths were respectively, about 0.5 and 0.3 meV. The sharp lines of the PL spectra were probably due to the radiative recombination of excitons localized into lateral potential islands in the single structure. In the PL spectrum at a lower excitation power, a sharp line split into extremely sharp lines ͑Х 0.04 meV͒. This fine splitting possibly represents a difference in the confinement energy of excitons localized in potential islands that have almost the same local thickness but differ in size and microstructure. From our analysis of the PLE spectra and the resonant PL spectra, we conclude that a sharp line in a PLE spectrum is not directly related to any particular sharp line of a PL spectrum. The sharp lines of the PLE spectra can be interpreted in terms of exciton absorption whose energy is determined by the locally averaged thickness of the single structure. ͓S0163-1829͑99͒00443-9͔

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AlGaAs/GaAs wire and box structures prepared by molecular-beam epitaxial regrowth on in situ patterned GaAs substrates

Cited by 12 publications

References 9 publications

Focused ion beam assisted chemically etched mesas on GaAs(001) and the nature of subsequent molecular beam epitaxial growth

Focused ion beam assisted chemically etched mesas on GaAs(001) and the nature of subsequent molecular beam epitaxial growth

Fabrication of coupled quantum disks on a patterned substrate by MBE

Sharp luminescent lines from single three-dimensionally confined GaAs/AlAs structures grown on a patterned GaAs substrate

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