AlGaInAs GRADED-GAP GUNN DIODE

Storozhenko, I. P.; Kaydash, M. V.

doi:10.1615/telecomradeng.v75.i16.70

Cited by 6 publications

(5 citation statements)

References 8 publications

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“…Particularly, to reduce direct transition time, semiconductor layers with variable composition can be used, so that the energy gap between the lower and lateral valleys is minimal at the cathode and increases in the direction of the anode. Examples of graded gap AlzGa1 -zAs, GaPzAs1 -z and InzGa1 -zAsbased diode usage are presented in works [7][8][9].…”

Section: Introductiionmentioning

confidence: 99%

Generation of Electromagnetic Oscillations of Submillimeter Range by GazIn1 – zAs Diodes Using Impact Ionization

Botsula¹,

Prykhodko²

2019

J. Nano- Electron. Phys.

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Development of millimeter and terahertz wave ranges is one of the main objectives of modern highfrequency electronic devices. However, there are not many active elements able to operate in these ranges. Transferred electron devices (TED) still remain a more widespread compact electromagnetic wave sources. But oscillation efficiency of TED operating in the submillimeter wave range is small and, in most cases, generation becomes impossible. Difficulties in obtaining maximum frequencies are mainly determined by the electron transition time from the upper valley to the lower one. The aim of the work is to investigate reduction of the transition time problem by using band to band impact ionization. The paper deals with charge transport in short diodes with InzGa1-zAs-based graded band structure with the active region length of 0.64 m. Doping concentration in the n-type active region was 10 16 …8•10 16 cm-3. Ensemble Monte-Carlo Technique is carried out to describe the charge carrier dynamics in the device. A three-valley conduction band and heavy hole band ГV1 are taken into account. It is shown a possibility of using localized impact ionization as an energy relaxation mechanism. Correlation between the number of acts of impact ionization and decrease in electron number in the upper va lleys are demonstrated. Oscillation efficiency of the diodes is calculated. It is shown that impact ionization can lead to increase in the maximum generation frequency. The proposed way of improving frequency properties due to modification of electron transfer near the anode contact can be applied to short structures and allows maximum generation frequencies.

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Section: Introductiionmentioning

confidence: 99%

Generation of Electromagnetic Oscillations of Submillimeter Range by GazIn1 – zAs Diodes Using Impact Ionization

Botsula¹,

Prykhodko²

2019

J. Nano- Electron. Phys.

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“…self-oscillations. It should be noted that, as shown by the research results [6,10,14], such devices have RF power when operating in a resonator.…”

Section: -5mentioning

confidence: 92%

“…A diode with an doping profile based on graded-gap Ga1-x(z)Inx(z)Py(z)As1-y(z) alloy was simulated with the following parameters: active zone length la  1.0 m, electron densities in it 4×10 16 , 5×10 16 and 6×10 16 cm -3 , length of the cathode and lc  0.4 m, electron density 3×10 17 cm -3 . The mole fractions of In and P in Ga1-xInxPyAs1-y were given by S-dependences as in [6,7]. The graded-gap alloy layer was placed in such a way that the beginning of the change in the semiconductor composition corresponded to the cathode contact.…”

Section: Diode Structure and Simulation Modelmentioning

confidence: 99%

“…For oscillations to occur, it is necessary to further reduce the energy gap between the -valley and side valleys in the cathode. This can be realized, for example, using AlGaAs -GaInAs [6,11] or GaPAs -GaAs [7] alloys.…”

Section: Current Oscillations In a Graded-gap Diodementioning

confidence: 99%

“…Such a contact acts as a 'hot electron injector', increases intervalley electron transfer and reduces the 'dead space'. However, research of the diode operation with graded-gap AlGaAs alloy in the transit zone showed even better microwave characteristics than with AlGaAs/GaAs heterojunction [5,6]. The dependence on the coordinate of many electrophysical parameters of a graded-gap semiconductor has a strong effect on the physical processes occurring in a graded-gap diode [6].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Advanced Micron Sized Gunn Diode Based on Graded-Gap GaPAs – GaInAs

Storozhenko¹,

Sanin²

2022

J. Nano- Electron. Phys.

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The paper studies the characteristics of Gunn diodes based on graded-gap GaInPAs semiconductor. Gunn diodes are active elements for generating electromagnetic waves in the millimeter and submillimeter ranges. Nowadays, providing modern equipment with active sources of the subterahertz range is an urgent task. It can be implemented by increasing Gunn diodes power and cutoff frequencies of generation. One of the means to increase the cutoff frequency of Gunn diodes is the use of graded-gap semiconductors. The dependence on the coordinate of many parameters of a graded-gap semiconductor affects the processes that occur in the Gunn diode based on the graded-gap semiconductor. Therefore, it is very important to optimize the diode structure by both the doping level and varying the fraction parts of the graded-gap alloy. The paper presents the results of modeling the operation of Gunn diodes with an active zone length of 1 μm based on graded-gap GaPAs -GaInAs alloy at different lengths of the graded-gap layer, different fraction parts of In and P and different electron densities in the active zone. The power spectra of self-oscillations (in the absence of a resonator) of Gunn diodes are obtained, the analysis of physical processes is performed, the optimal lengths of the graded-gap semiconductor layer and optimal mole fractions of In and P are found to obtain the highest power and oscillation frequency. For diodes with an electron density in the active zone of 6×10 16 cm -3 , Ga0.67P0.33As -Ga0.5In0.5As has the greatest oscillation power at the layer length of the graded-gap compound equal to 0.2 m. This diode provides an RF power of 11.28 mW at 102.5 GHz for the fundamental harmonic and 49 W (307.5 GHz) for the third harmonic.

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Diode on Based Graded GaPAs-GaInAs as High Power Source of Millimeter Wave

Storozhenko

2021

2021 IEEE 2nd KhPI Week on Advanced Technology (KhPIWeek)

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AlGaInAs GRADED-GAP GUNN DIODE

Cited by 6 publications

References 8 publications

Generation of Electromagnetic Oscillations of Submillimeter Range by GazIn1 – zAs Diodes Using Impact Ionization

Generation of Electromagnetic Oscillations of Submillimeter Range by GazIn1 – zAs Diodes Using Impact Ionization

Advanced Micron Sized Gunn Diode Based on Graded-Gap GaPAs – GaInAs

Diode on Based Graded GaPAs-GaInAs as High Power Source of Millimeter Wave

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