AlGaInP multiple quantum wire heterostructure lasers prepared by the strain-induced lateral-layer ordering process

Pearah, P. J.; Chen, A.C.; Moy, A. M.; Hsieh, Kuang-Chien; Cheng, K. Y.

doi:10.1109/3.283809

Cited by 84 publications

(69 citation statements)

References 27 publications

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“…Strain-induced selforganization of alloyed material systems has proved useful for the preparation of superlattice or heterostructures at a nanometer scale and has been already extensively utilized in zero-and twodimensional systems. [12][13][14][15] For example, strained GaN quantum dot arrays have been prepared within an AlN matrix. 13 Straininduced self-ordering has also been used to prepare arrays of quantum wire lasers in the AlGaInP system on a planar substrate.…”

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confidence: 99%

Self-Organized GaN Quantum Wire UV Lasers

et al. 2003

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Quantum wire lasers are generally fabricated through complex overgrowth processes with molecular beam epitaxy. The material systems of such overgrown quantum wires have been limited to Al-Ga-As-P, which leads to emission largely in the visible region. We describe a simple, one-step chemical vapor deposition process for making quantum wire lasers based on the Al-Ga-N system. A novel quantum-wire-in-opticalfiber (Qwof) nanostructure was obtained as a result of spontaneous Al-Ga-N phase separation at the nanometer scale in one dimension. The simultaneous excitonic and photonic confinement within these coaxial Qwof nanostructures leads to the first GaN-based quantum wire UV lasers with a relatively low threshold.Quantum confinement of charge carriers in more than one dimension in quantum wires and quantum dots has been predicted to yield improved performance of semiconductor lasers, relative to conventional quantum well devices. 1,2 The carrier confinement is expected to lead to reduced threshold currents and narrower spectral line widths. The potential advantages of the quantum wire lasers could make them ideal for a variety of applications that require coherent light sources with low power consumption and high-speed digital modulation capability. A major challenge, however, has been the development of the fabrication technology for preparing quantum wire heterostructures that are compatible with laser applications. Almost all quantum wire lasers reported thus far have been made through molecular beam epitaxy, microfabrication, and lithographical techniques on the GaAs/InP system for visible light emission. 1,3,4 Significant technical hurdles exist for the direct fabrication of GaN-based quantum wire lasers, despite their obvious potential in short-wavelength photonic devices and hightemperature/high-power optoelectronics. 5-8 Herein, we report the first realization of self-organized, monolithically singlecrystalline GaN/Al x Ga 1-x N (x ) 0.75) core-sheath onedimensional (1D) nanostructures. Quantum wires of GaN (refractive index of 2.54) with diameters as small as 5 nm are cladded by Al 0.75 Ga 0.25 N (refractive index of 2.25) sheaths with uniform thicknesses in the range of 50-100 nm, forming a novel quantum-wire-in-optical-fiber (Qwof) structure. As a manifestation of the quantum confinement, a blue shift of the photoluminescence (PL) has been observed. Moreover, the simultaneous excitonic and photonic confinement within these coaxial Qwof nanostructures leads to the first GaN-based quantum wire UV lasers with relatively low thresholds.Recently, UV lasing has been demonstrated by our groups for the ZnO and GaN nanowire systems. [9][10][11] In these earlier studies, the entire faceted nanowire (generally with a diameter of >100 nm) serves both as a gain medium and as a FabryPerot optical cavity. This nanowire nanolaser configuration places a lower limit on the lasing nanowire diameter, approximately λ/2n (where n is the refractive index), below which the nanowire is no longer capable of sustaining even a leaky ...

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Self-Organized GaN Quantum Wire UV Lasers

et al. 2003

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“…Subsequently Cheng et al used this in-situ spontaneous lateral superlattice formation process to form the active regions of quantum wire semiconductor lasers [4,5]. Kim et al [6] used this process to form self-organized dot and columnar structures in (GaP)#d?…”

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confidence: 99%

“…However, <310> directionality is observed at the (001) surface of semiconductors. For example it has been reported that InAs quantum dots grown on GaAs substrates and lattice-matched InGaAs buffer layers on InP substrates may have a pyramidal shape bounded by {136} facets [54][55][56] which intersect the (001) surface along the [3][4][5][6][7][8][9][10] and directions perpendicular to the modulation directions in the low InAs mole fraction (AIAs)~(InAs). SPS samples.…”

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confidence: 99%

The Nature and Origin of Lateral Composition Modulations in Short-Period Strained-Layer Superlattices

et al. 1999

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“…In particular, light emitting diodes and lasers with compositionally modulated active regions have already been fabricated and have demonstrated modified materials performance in comparison to conventional quantum well lasers. [8][9][10] The causes of LCM are currently under debate, but it is generally agreed that there is a kinetic process in which surface diffusion, including a gradient term, together with strain lead to thickness undulation and composition modulation. 11 The detailed combination of these different effects is material dependent, and so it is possible that different mechanisms predominate in single-layer versus SPS structures.…”

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confidence: 99%

Lateral composition modulation in InAs/GaSb superlattices

Stokes

Forrest

et al. 2003

Journal of Applied Physics

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We report the analysis of lateral composition modulation in (InAs) m /(GaSb) m superlattices by x-ray diffraction. Vertical and lateral satellite peaks for a 140 period structure were observed. The lateral modulation wavelength, average superlattice composition, and vertical superlattice wavelength were determined. The lateral modulation was observed only along one in-plane direction resulting in quantum wire-like structures along the ͓110͔ direction. The unconventional structure of the lateral composition modulation, in which the stacking of the layers leads to a doubling of the vertical superlattice period, is discussed.

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AlGaInP multiple quantum wire heterostructure lasers prepared by the strain-induced lateral-layer ordering process

Cited by 84 publications

References 27 publications

Self-Organized GaN Quantum Wire UV Lasers

Self-Organized GaN Quantum Wire UV Lasers

The Nature and Origin of Lateral Composition Modulations in Short-Period Strained-Layer Superlattices

Lateral composition modulation in InAs/GaSb superlattices

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