AlGaInP visible laser diode with extremely high quantum efficiency having lateral leaky waveguide structure

Abstract

AlGaInP visible laser diode with lateral leaky waveguide structure has been demonstrated for the fust time. The laser has differential quantum efficiency as high as 43% from one facet in addition to fundamental-transverse-mode stability without facet coating. The high differential quantum efficiency is due to the low propagation loss of this laser.