AlGaInP visible laser diodes grown on misoriented substrates

Hamada, Hiroki; Shono, Masayuki; Honda, S.; Hiroyama, R.; Yodoshi, K.; Yamaguchi, Takao

doi:10.1109/3.89967

Cited by 100 publications

(15 citation statements)

References 22 publications

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“…InP hillocks similar in their appearance to those typical for GaInP/GaAs layers [4][5][6][7] were also found in the GaInP layers grown on GaAs/Ge substrates. The InP hillocks had a surface density of % 2000 cm À2 , and they were observed to be very homogenous in their faceted form, crystallite orientations and size ð % 6 Â 12 mm 2 Þ.…”

Section: Discussionmentioning

confidence: 57%

“…Some differences in the shapes of the X-ray maxima arising from the asymmetric strain is observed in RSMs of Figs. 3 and 4, but due to the relatively small strain in samples A and B, the differences in peak shapes between Figs Similar hillocks in Ga 1Àx In x P=GaAs with 0:388 r x r0:552 have been reported in [6], and they are a well-known problem in GaInP epitaxy [4,5,7]. However, it is possible to grow hillock-free GaInP layers using PH 3 as P precursor, if the PH 3 flow is modulated during the MOVPE growth [17].…”

Section: Resultsmentioning

confidence: 99%

“…The GaAs/ Ge structures used as substrates in this work are of a high crystal quality and have been previously studied in [2,3]. The main idea for using the GaAs/Ge substrates is to apply prior knowledge about growing GaInP on GaAs [4][5][6][7] to Ge substrates with only minor modifications. Also, problems with anti-phase domains (APD) appearing in GaAs epilayers on Ge were already solved in a previous publication [2], and by using GaAs/Ge substrates instead of plain Ge substrate the possible problem of APD formation on GaInP/Ge interface is probably avoided.…”

Section: Introductionmentioning

confidence: 99%

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Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge

Lankinen¹,

Knuuttila²,

Kostamo³

et al. 2009

Journal of Crystal Growth

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In x P layers are grown on GaAs/Ge substrates by metalorganic vapor phase epitaxy and studied by means of synchrotron X-ray topography and high-resolution X-ray diffractometry. Misfit dislocations (MDs) in Ga 0:5094 In 0:4906 P epilayers having a þ 3:8 Â 10À4 lattice mismatch to GaAs/Ge substrates at room temperature (RT) are observed. Ga 0:4995 In 0:5005 P epilayers having a lattice mismatch of À3:5 Â 10 À4 to the GaAs/Ge substrates at RT are shown to be free of MDs, which is explained by the different linear thermal expansion coefficient of the epilayer from that of the substrate material compensating the lattice mismatch at the growth temperature of 610 3 C. The Matthews-Blakeslee model for critical thickness was matched to the observed MD pattern in the samples. Additionally, faceted InP hillocks and strain fields beneath them are observed within the GaInP layers. The observed MDs, which are most likely of the 60 3 mixed /1 0 1Sf1 1 1g type, originate at the hillocks.

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Section: Discussionmentioning

confidence: 57%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge

Lankinen¹,

Knuuttila²,

Kostamo³

et al. 2009

Journal of Crystal Growth

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“…Therefore, a careful study of the alloy compositions of both the flat-top and sidewall facets of the ridge structure is necessary. Second, it is well known that spontaneous atomic ordering on the group-III sublattice typically occurs in GaInP layers grown on (0 0 1)GaAs substrates by metalorganic vapor phase epitaxy (MOVPE), which can lower the LED emission energy by as much as 100 meV [5][6][7]. The spontaneous atomic ordering is also known to lower Zn doping concentrations and to increase the density of hillock defects of MOVPE-grown AlGaInP layers [6], seriously influencing the performances of high-efficiency LEDs.…”

Section: Introductionmentioning

confidence: 99%

Growth and characterization of sub-wavelength-sized GaInP ridge structures on GaAs substrates

Seo

Wang

2011

Journal of Crystal Growth

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“…Thus there is less data available on the dependence of ordering on growth conditions. Nevertheless Transmission Electron Microscopy (TEM) studies [66,67] suggest that the general trends observed for GaInP also hold for AlGaInP. Depending on the composition, ordering extends to higher growth temperatures.…”

Section: Orderingmentioning

confidence: 90%

Epitaxy of High-Power Diode Laser Structures

Weyers

Bhattacharya

Bugge

et al.

Topics in Applied Physics

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Abstract. Excellent semiconductor-material quality is an essential prerequisite for the fabrication of high-power diode lasers and laser bars. This review discusses issues in the epitaxial growth of semiconductor materials and layer sequences that form the basis for diode lasers. First, an overview of the material systems used for diode lasers with emission wavelengths extending from the far-infrared to the blue range of the spectrum is presented. The following sections then concentrate on materials that have, until now, been used for high-power diode lasers: the GaAs-based, and to a lesser extent also the InP-based members of the III-V family (Al, Ga, In)(As, P). Different growth techniques are described, with stress on the two modern methods -Molecular-Beam Epitaxy (MBE) and Metalorganic Vapor-Phase Epitaxy (MOVPE) -that are currently used for the growth of diode-laser structures. An attempt is made to compare the relative strengths and weaknesses of these epitaxial growth techniques.The issues of purity, ordering (observed for example in GaInP), phase separation (occurring for certain compositions of GaInAsP) and p-and n-type doping for the constituent III-V materials found in high-power diode lasers are discussed in detail. The sequential growth of layers of controlled thicknesses, composition and doping profiles to build up the desired heterostructures requires careful optimization of the growth processes, especially at the heterointerfaces. While most of the layers within the heterostructure are lattice-matched to the underlying substrate, the active, light-emitting layer usually consists of one or more strained quantum wells (QWs). The advantages of such strained layers along with the corresponding implications from the growth viewpoint are highlighted. Finally, an overview of the different material combinations used and the state-of-the-art for 600-1060 nm emitting GaAs-based diode lasers is presented.The first reports on semiconductor-diode lasers [1] date back to 1962. Since then these devices have been realized over a wide range of emission wavelengths in a variety of material systems. Since the first demonstration of the semiconductor laser, threshold-current densities have fallen by more than three orders of magnitude, due to various breakthroughs made possible primarily by advancements in crystal-growth technologies. Improvements in Liquid-Phase Epitaxy (LPE) in the early 1970s enabled the realization of the Double Heterostructure (DH) concept and Continuous-Wave (CW) operation of GaAs/AlGaAs lasers, while progress in growth technologies like MolecularBeam Epitaxy (MBE) and Metalorganic Vapor-Phase Epitaxy (MOVPE) were responsible for the development of quantum-well lasers, which are the basis of most high-power diode lasers today. This review describes and compares the different epitaxial growth methods used to fabricate diode lasers in various material systems and examines important growth-related issues such as doping, ordering and homogeneity that are essential for the successful fabrication of ...

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AlGaInP visible laser diodes grown on misoriented substrates

Cited by 100 publications

References 22 publications

Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge

Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge

Growth and characterization of sub-wavelength-sized GaInP ridge structures on GaAs substrates

Epitaxy of High-Power Diode Laser Structures

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