AlGaN/AlN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistor with Annealed Al₂O₃ Gate Dielectric

Abstract

An AlGaN/AlN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMT) with an Al2O3 insulator is studied. The post-deposition annealing (PDA) of Al2O3 is conducted. The effects of PDA in an N2 atmosphere on the performance of the MOS-HEMTs are studied. Experimental results demonstrate that the trap density in the Al2O3 MOS diode is significantly decreased by annealing. Adding annealed Al2O3 as a surface passivation and a gate oxide layer on HEMTs reduces gate leakage currents, increases the two-terminal reverse breakdown voltage, and improves the high-frequency performance of the HEMTs.

AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO2 as Passivation and Dielectric Layers

“…Particular insulators have been intensively examined. They include the insulating dielectric materials AlO X [ 8 ], Al 2 O 3 [ 9 , 10 , 11 , 12 , 13 , 14 , 15 ], TiO 2 [ 15 , 16 , 17 , 18 ], ZrO 2 [ 19 , 20 ], SiN X [ 21 ], and SiO 2 [ 22 , 23 , 24 ]. TiO 2 has high dielectric constants, making TiO 2 an excellent insulating material for use in MOS devices.…”