AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(111)

Cordier, Y.; Sèmond, F.; Hugues, Maxime; Natali, F.; Lorenzini, P.; Haas, H.; Chenot, Sébastien; Laügt, M.; Tottereau, O.; Vennéguès, P.; Massies, J.

doi:10.1016/j.jcrysgro.2005.01.038

Cited by 26 publications

(23 citation statements)

References 12 publications

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“…Assuming an energy shift of δE/δε xx ≈ 9.5 eV [4], one can deduce from the I 2 peak position dispersion on GaN template (+/-0.35 meV) a very low dispersion in strain δε xx ≈ +/-3.7x10 -5 which weakly affects the dispersion of the AlGaN and the GaN QW PL peaks energies. On the other hand, the high dislocation density (about 8x10 9 cm -2 ) usually present in our 1.5 µm thick AlGaN layers grown on Si(111) [6] is responsible for higher strain fluctuation and consequently the broadening of the PL peaks, and on-wafer dispersion of the peak positions.…”

Section: Methodsmentioning

confidence: 82%

Quality and uniformity assessment of AlGaN/GaN quantum wells and HEMT heterostructures grown by molecular beam epitaxy with ammonia source

Cordier¹,

Pruvost²,

Sèmond³

et al. 2006

Phys. Status Solidi (c)

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In the present work, AlGaN/GaN quantum wells and High Electron Mobility Transistors (HEMTs) have been grown by molecular beam epitaxy on Si(111) and GaN on sapphire templates. The optical quality and the electrical properties were studied by low temperature photoluminescence and Hall effect. These measurements attest the quality of these heterostructures and demonstrate the high on-wafer uniformity of the materials grown on 50 mm wafers, and this even for the III-nitrides grown on Silicon.1 Introduction In recent years, the Molecular Beam Epitaxy (MBE) has begun to demonstrate potentialities to realize high quality GaN based heterostructures for electronics as well as optoelectronic applications. Beyond the achievement of high quality GaN based heterostructures, MBE is now dealing with other process considerations such as reproducibility and uniformity on various substrates like sapphire, silicon carbide or silicon. In order to address this latter point, AlGaN/GaN quantum wells (QWs) and HEMT heterostructures have been grown with a Riber MBE reactor designed for the growth of IIINitrides materials. Ammonia was used as nitrogen source, whereas effusion cells supplied group III elements. The growth were performed on 50 mm Si(111) wafers and on 50 mm MOCVD grown GaN on sapphire templates. The layer optical properties were assessed by using low temperature photoluminescence (PL) performed across the wafers, whereas the electrical quality was studied by Hall effect after the realization of van der Pauw cloverleaf and Hall bar devices. The effect of heteroepitaxial growth on the layers quality was studied by comparing results obtained on Silicon with those obtained on the low defect density GaN templates.

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Section: Methodsmentioning

confidence: 82%

Quality and uniformity assessment of AlGaN/GaN quantum wells and HEMT heterostructures grown by molecular beam epitaxy with ammonia source

Cordier¹,

Pruvost²,

Sèmond³

et al. 2006

Phys. Status Solidi (c)

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“…In contrast, the GaN channel in AlGaN/GaN/AlGaN DH-FET is free of alloy scattering and higher electron mobility was observed on Sapphire and SiC substrates [13,14]. However, few work of AlGaN/GaN/AlGaN DH-FET on silicon was reported in the literature [15] due to the difficulties in growing high quality AlGaN layers on silicon. In this work, high quality AlGaN layers with Aluminum composition up to 53% was successfully grown on 4 inch Si(111) substrates.…”

mentioning

confidence: 99%

AlGaN‐based heterostructures grown on 4 inch Si(111) by MOVPE

Cheng

Leys

Derluyn

et al. 2008

Phys. Status Solidi (c)

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AlGaN is an important material for ultra‐violet light emitters, photo detectors and high breakdown voltage switching devices. In this work, crack‐free AlxGa1‐xN (5% < x < 55%) layers up to 1.5 μm have been grown on 4 inch Si(111) using an AlN/AlyGa1‐yN (y > 70%) template. The structural quality of AlGaN layers is comparable to that of GaN layers grown on silicon(111). For Al0.16Ga0.84N, the FWHM of HR‐XRD (0002) and (‐1102) ω‐scan is around 650 arc sec and 1200 arc sec respectively. Based on this high quality AlGaN buffer, a double heterostructure (DH) FET was demonstrated. The sheet resistance of DH‐FET is 274 ± 4.7 Ω/□ and the uniformity value of 1.7% is also excellent. Some of the wafers have been processed. Devices with a gate length of 2 μm showed current density of 500 mA/mm and transconductance of more than 200 mS/mm. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…18 On the other hand, another growth regime employing a moderate growth temperature ͑740-780°C͒ and high ammonia flux ͑Ն200 SCCM, BEPՆ 1 ϫ 10 −4 Torr͒ has been established for the development of GaN HEMT on Si ͑111͒ wafers. [15][16][17] Growth in this regime is via 2D mode, yielding excellent surface and interface smoothness. In addition, the GaN layers grown in this regime are highly resistive without any intentional doping, satisfying the requirement of resistive buffer layers for HEMT devices.…”

Section: Ammonia Cracking Kinetics and Growth Regimesmentioning

confidence: 98%

“…In addition, the GaN layers grown in this regime are highly resistive without any intentional doping, satisfying the requirement of resistive buffer layers for HEMT devices. [15][16][17] Similar layer-by-layer growth conditions have also been used for growth of GaN/InGaN or GaN/AlGaN quantum well structures ͑on sapphire substrates͒ where interface smoothness is important. [27][28][29] In Fig.…”

Section: Ammonia Cracking Kinetics and Growth Regimesmentioning

confidence: 99%

“…In fact, high-resistivity UID GaN has been routinely grown on silicon wafers by ammonia-MBE, as part of the GaN HEMT-on-silicon recipe developed by a group in France. [15][16][17] However, the limited resistivity ͑usu-ally in the order of 10 4 ⍀ cm͒ of the resistive silicon substrate itself prevented accurate study of the resisitivity and compensation mechanisms of the GaN epilayers.…”

Section: Introductionmentioning

confidence: 99%

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Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy

Tang

Fang

Rolfe

et al. 2010

Journal of Applied Physics

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Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivityGrowth of unintentionally doped ͑UID͒ semi-insulating GaN on SiC and highly resistive GaN on sapphire using the ammonia molecular-beam epitaxy technique is reported. The semi-insulating UID GaN on SiC shows room temperature ͑RT͒ resistivity of 10 11 ⍀ cm and well defined activation energy of 1.0 eV. The balance of compensation of unintentional donors and acceptors is such that the Fermi level is lowered to midgap, and controlled by a 1.0 eV deep level defect, which is thought to be related to the nitrogen antisite N Ga , similar to the "EL2" center ͑arsenic antisite͒ in unintentionally doped semi-insulating GaAs. The highly resistive GaN on sapphire shows RT resistivity in range of 10 6 -10 9 ⍀ cm and activation energy varying from 0.25 to 0.9 eV. In this case, the compensation of shallow donors is incomplete, and the Fermi level is controlled by levels shallower than the 1.0 eV deep centers. The growth mechanisms for the resistive UID GaN materials were investigated by experimental studies of the surface kinetics during growth. The required growth regime involves a moderate growth temperature range of 740-780°C, and a high ammonia flux ͑beam equivalent pressure of 1 ϫ 10 −4 Torr͒, which ensures supersaturated coverage of surface adsorption sites with NH x radicals. Such highly nitrogen rich growth conditions lead to two-dimensional layer by layer growth and reduced oxygen incorporation.

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AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(111)

Cited by 26 publications

References 12 publications

Quality and uniformity assessment of AlGaN/GaN quantum wells and HEMT heterostructures grown by molecular beam epitaxy with ammonia source

Quality and uniformity assessment of AlGaN/GaN quantum wells and HEMT heterostructures grown by molecular beam epitaxy with ammonia source

AlGaN‐based heterostructures grown on 4 inch Si(111) by MOVPE

Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy

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