AlGaN/GaN current aperture vertical electron transistors with regrown channels

Ben-Yaacov, I.; Seck, Yee-Kwang; Mishra, Umesh K.; DenBaars, Steven P.

doi:10.1063/1.1641520

Cited by 140 publications

(61 citation statements)

References 11 publications

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“…Free-standing GaN substrates with a low dislocation density are now commercially available [4], allowing the study of vertical GaN-based transistors on GaN substrates possible. Thus far, vertical insulated gate HFETs with re-grown current aperture [3,5] and vertical trench gate metal oxide semiconductor field effect transistors (MOSFETs) [6,7] have been reported. However, their insufficient specific onresistance and breakdown voltages as well as the difficulty of normally-off operation in the insulated gate HFET hamper the practical realization of these devices for power electronics applications.…”

mentioning

confidence: 99%

Vertical heterojunction field‐effect transistors utilizing re‐grown AlGaN/GaN two‐dimensional electron gas channels on GaN substrates

Yaegassi

Okada

Saitou

et al. 2010

Phys. Status Solidi (c)

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Vertical heterojunction field‐effect transistors (VHFETs) utilizing re‐grown AlGaN/GaN two‐dimensional electron gas (2DEG) channels on free‐standing GaN substrates have been developed. The VHFETs exhibited a specific on‐resistance (RonA) of 7.6 mΩcm2 at a threshold voltage (Vth) of ‐1.1 V and a breakdown voltage (VB) of 672 V. The breakdown voltage and the figure of merit (VB2/RonA) are the highest among those of the GaN‐based vertical transistors ever reported. It was demonstrated that the threshold voltage can be controlled by the thickness of AlGaN layers and Al concentration. A normally‐off operation was achieved with a 10‐nm‐thick Al0.2Ga0.8N layer. The possibility that VHFET with smaller current collapse phenomena than planar HEMT was revealed (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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mentioning

confidence: 99%

Vertical heterojunction field‐effect transistors utilizing re‐grown AlGaN/GaN two‐dimensional electron gas channels on GaN substrates

Yaegassi

Okada

Saitou

et al. 2010

Phys. Status Solidi (c)

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“…Even though, this is one of the advantageous designs for high power device, vertical technology is not mature yet. Yaacov et al has reported the current aperture vertical electron transistor (CAVET) [9]; this report shows that the high electric field region being buried inside the bulk of material which is advantageous to mitigate the DC-RF dispersion. Previous reports successfully prove that III-V vertical device has potential of low value of on-state resistance (R on ) [10], high speed device [11] and very high breakdown voltage [12,13].…”

Section: Introductionmentioning

confidence: 96%

Optimal design of the multiple-apertures-GaN-based vertical HEMTs with $$\hbox {SiO}_{2}$$ SiO 2 current blocking layer

Shrestha

Chang

2015

J Comput Electron

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Gallium nitride (GaN) based vertical high electron mobility transistor (HEMT) is very crucial for high power applications. Combination of advantageous material properties of GaN for high speed applications and novel vertical structure makes this device very beneficial for high power application. To improve the device performance especially in high drain bias condition, a novel GaN based vertical HEMT with silicon dioxide (SiO 2 ) current blocking layer (CBL) was reported recently. In this paper, effects of the thickness of CBL layer and the aperture length on the electrical and breakdown characteristics of GaN vertical HEMTs with SiO 2 CBL are simulated by using two-dimensional quantum-mechanically corrected device simulation. Intensive numerical study on the device enables us to optimize and conclude that devices with 0.5-µm-thick SiO 2 layer and 1-µm-long aperture will be beneficial considerations to improve the device performance. Notably, using the multiple apertures can effectively reduce the on-state conducting resistance of the device. On increasing the number of apertures, the drain current is increased but the breakdown voltage is decreased. Therefore, device with four apertures is taken as an optimized result. The maximum drain current of 84 mA B Yiming Li at V G = 1 V and V D = 30 V, and the breakdown voltage of 480 V have been achieved for the optimized device.

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“…The electric field at the surface, which results from the small potential difference between the gate and the source, is relatively small, so the surface states should not fill up with electrons. Thus, DC-RF dispersion in vertical HEMT is reduced [11]. For these reasons, the GaN-based vertical transistor has become an attractive alternative for power devices.…”

Section: Introductionmentioning

confidence: 99%

DC and RF Analysis of Geometrical Parameter Changes in the Current Aperture Vertical Electron Transistor

Kang¹,

Seo²,

Yoon³

et al. 2016

Journal of Electrical Engineering and Technology

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-This paper presents the electrical characteristics of the gallium nitride (GaN) current aperture vertical electron transistor (CAVET) by using two-dimensional (2-D) technology computeraided design (TCAD) simulations. The CAVETs are considered as the alternative device due to their high breakdown voltage and high integration density in the high-power applications. The optimized design for the CAVET focused on the electrical performances according to the different gate-source length (L GS ) and aperture length (L AP ). We analyze DC and RF parameters inducing on-state current (I on ), threshold voltage (V t ), breakdown voltage (V B ), transconductance (g m ), gate capacitance (C gg ), cut-off frequency (f T ), and maximum oscillation frequency (f max ).

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AlGaN/GaN current aperture vertical electron transistors with regrown channels

Cited by 140 publications

References 11 publications

Vertical heterojunction field‐effect transistors utilizing re‐grown AlGaN/GaN two‐dimensional electron gas channels on GaN substrates

Vertical heterojunction field‐effect transistors utilizing re‐grown AlGaN/GaN two‐dimensional electron gas channels on GaN substrates

Optimal design of the multiple-apertures-GaN-based vertical HEMTs with $$\hbox {SiO}_{2}$$ SiO 2 current blocking layer

DC and RF Analysis of Geometrical Parameter Changes in the Current Aperture Vertical Electron Transistor

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