AlGaN/GaN HEMT high-power and low-noise performance at f≥20 GHz

2013 22nd International Conference on Noise and Fluctuations (ICNF)

et al. 2013

The microwave noise parameters measured on AlInN/GaN HEMTs devices with different gate length values are presented in this paper. 0.15-µm HEMTs achieve a maximum current density of 700 mA/mm at V GS = 0 V and a measured extrinsic transconductance of 350 mS/mm. The current gain cutoff frequency and the maximum oscillation frequency are 40 GHz and 70 GHz, respectively. At 10 (20) GHz, the device exhibits a minimum noise figure of 0.8 dB (1.8) dB with an associated power gain of 14 (8.8) dB. Below 8 GHz, the gate leakage current and a generation-recombination noise source with a very short time constant limit the noise performance.

Section: Microwave Noise Characterizationsupporting

confidence: 81%

Section: Microwave Noise Characterizationsupporting

confidence: 51%

Noise characteristics of AlInN/GaN HEMTs at microwave frequencies

2013 22nd International Conference on Noise and Fluctuations (ICNF)

et al. 2013

“…The device under test from figure 1 features a transition frequency F t =40 GHz and a maximum oscillation frequency F max =70 GHz. The value of F min =1.8 dB at 20 GHz (with associated gain G a =8.8 dB) is still above that of AlGaN/GaN HEMT [3] [4] or InAn/AlN/GaN transistors [5], featuring noise figures close to 1 dB at 26 GHz [5] or at 36 GHz [4] due to their low L G ≤0.1µm. The reduction of the drain current largely affects the performances of F min , as observed between HEMT and MOS-HEMT devices in figure 2.…”

Section: High Frequency Noise Parametersmentioning

confidence: 85%

InAlN/GaN HEMT technology for robust HF receivers: An overview of the HF and LF noise performances

2015 International Conference on Noise and Fluctuations (ICNF)

et al. 2015

From the first developments of Nitride technologies using AlGaN/GaN heterostructures for designing high power, high frequency HEMT devices, we now assist to the emergence of new declination with InAlN/GaN heterostructures. Considering the expected better interface quality of this last technology as a consequence of the better lattice match, and better electrical properties, these HEMT devices attract much interest for high frequency applications (transmitter for power, receiver for low noise and robustness versus jamming). Different InAlN/GaN technological developments have been studied considering their frequency and noise parameters for low noise amplifiers in Ka-band. The paper addresses two issues related to noise in InAlN/GaN HEMT devices; one concerns the study of the HF noise performance for different technological processes and for the optimized technology, whereas the second focuses on the gate and drain current LFN spectra of competing technological versions featuring good HF dynamic and noise performance.

“…It was also observed in AlGaN/GaN HEMTs and may be attributed to traps located in the GaN channel layer, at the AlGaN/GaN interface or at the surface area [13]- [16]. Trapping of carriers are generally responsible of parasitic effects, such as the virtual second gate [17], which directly impacts the power amplifiers characteristics [18], the noise properties [19], and the reliability of the devices [20].…”

Section: Introductionmentioning

confidence: 99%

Broadband Frequency Dispersion Small-Signal Modeling of the Output Conductance and Transconductance in AlInN/GaN HEMTs

IEEE Trans. Electron Devices

et al. 2013

Frequency dispersion of transconductance and output conductance in AlInN/GaN high electron mobility transistors is investigated in this paper. Broadband dispersion effects in the microwave frequency range are reported for the first time. A small-signal model is developed. Trapping effects are taken into account with parasitic electrical networks including distributed time constants. The model is compared to experimental data for several bias conditions and different types of dispersion.