AlGaN/GaN HEMT With Integrated Recessed Schottky-Drain Protection Diode

Bahat‐Treidel, Eldad; Lossy, R.; Würfl, Joachim; Tränkle, G.

doi:10.1109/led.2009.2026437

Cited by 47 publications

(27 citation statements)

References 5 publications

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“…The threshold voltage V th of SSD MISHFETs is -2 V from the linear extrapolation of I D . We observe an onset voltage of 0.16 V (at a drain current of 1 mA/mm) which is significantly lower than that reported in Schottky-drain AlGaN/GaN HFETs (17,18,19). The SSD MISHFET exhibits a drain forward-voltage drop of 1.9 V at I DS =200 mA/mm with V GS =3 V, which is ~1 V higher than that obtained in the conventional MISHEMT.…”

Section: Schottky-source/drain (Ssd) Al 2 O 3 /Inaln/gan Mishfetscontrasting

confidence: 66%

High Voltage InAlN/GaN HFETs Achieved by Schottky-Contact Technology for Power Applications

et al. 2013

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In this paper, a novel approach of Schottky-contact technology for high voltage InAlN/GaN power transistors is demonstrated. The improved breakdown voltage (BV) attributes to the effectively suppressed source carrier injection achieved by the Schottky source metallization featuring excellent metal morphology. Without using field-plate structure and buffer engineering technique, the record three-terminal off-state BV of 650 V is obtained for InAlN/GaN HFET featuring a Schottky source. The corresponding specific on-resistance is as low as 3.4 mΩ·cm 2 . Moreover, the proposed Schottky-contact technology enables the removal of conventional alloyed Ohmic contact which is beneficial to device scaling. The BV of 58 V is measured in an InAlN/GaN HFET with L GD of 250 nm, which is the highest BV reported on GaN-based HFETs with such a short drift region. With simple fabrication process as well as the device structure while achieving a significant breakdown voltage enhancement, the proposed technology opens up new perspectives for designing high voltage InAlN/GaN HFET for power applications.

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Section: Schottky-source/drain (Ssd) Al 2 O 3 /Inaln/gan Mishfetscontrasting

confidence: 66%

High Voltage InAlN/GaN HFETs Achieved by Schottky-Contact Technology for Power Applications

et al. 2013

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“…In the few studies on RB-HEMTs [1], [4]- [7], the reverse blocking was typically achieved by integrating a Schottky barrier diode (SBD) into the drain electrode [8]- [11], yet these devices presented small % B R and large IR, mainly limited by the generally poor reverse-blocking property of GaN SBDs. T. Morita et al reported bi-directional GaN switches with RB capabilities using two monolithic normally-off gate injection transistors [12], which despite the highly integrated architecture for bidirectional switching, presented a limited % B R voltage and a relatively large VON.…”

Section: Introductionmentioning

confidence: 99%

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

Zhu

Matioli

2017

IEEE Electron Device Lett.

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“…In addition, Figure shows that the drain current of the new structure changes slightly compared with the conventional one. According to the drain current and the carrier velocity equations below, respectively, variation in the channel depth and the carrier distribution causes the drain current characteristic to fluctuate negligibly

I_{D} = Z . Q ((), x) . ν ((), x)

ν ((), x) = μ . E ((), x) = μ \frac{d V normalc ((), x)}{dx}

…”

Section: Resultsmentioning

confidence: 99%

An AlGaN/GaN HEMT by a reversed pyramidal channel layer: Investigation and fundamental physics

Jaghargh

Orouji

2020

Int J Numerical Modelling

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In this paper, an AlGaN/GaN HEMT with a reversed pyramidal channel layer (RPC‐HEMT) is proposed. The main purpose of the paper is an increase in the breakdown voltage of a conventional HEMT (C‐HEMT) to be suitable in high‐power applications. In the RPC‐HEMT, a reverse pyramidal channel layer in the high electric field traps the energetic carriers that cause the transistors to break. The steps decrease the carrier concentration across the two‐dimensional electron gas (2DEG) channel layer, especially under the gate contact. Therefore, the critical electrical field reduces by the uniform division of carrier mass and improves the breakdown voltage of the RPC‐HEMT by 32%. Besides, the maximum output power density of the new transistor improves compared with the conventional one. In addition, the radio frequency (RF) characteristics such as the cutoff frequency and maximum oscillation frequency of the RPC‐HEMT improve by the decline in the gate‐source capacitance. This article provides kink effects with the output reflection coefficient (S22) and the short‐circuit current gain (h21) to show how this anomalous phenomenon affects high‐frequency performance of devices. Finally, the proposed method makes the RPC‐HEMT appropriate for high‐power and high‐frequency applications.

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AlGaN/GaN HEMT With Integrated Recessed Schottky-Drain Protection Diode

Cited by 47 publications

References 5 publications

High Voltage InAlN/GaN HFETs Achieved by Schottky-Contact Technology for Power Applications

High Voltage InAlN/GaN HFETs Achieved by Schottky-Contact Technology for Power Applications

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

An AlGaN/GaN HEMT by a reversed pyramidal channel layer: Investigation and fundamental physics

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