AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer

Geng, Kuiwei; Chen, Ditao; Zhou, Quanbin; Wang, Hong

doi:10.3390/electronics7120416

Cited by 60 publications

(33 citation statements)

References 43 publications

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“…These values are typical for the state-of-the-art AlGaN/GaN heterostructures [ 23 , 24 , 25 , 26 , 27 ]. Therefore, we can conclude that elimination of the buffer layer did not worsen the parameters of the 2DEG.…”

Section: Resultsmentioning

confidence: 96%

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

et al. 2020

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We report on the high-voltage, noise, and radio frequency (RF) performances of aluminium gallium nitride/gallium nitride (AlGaN/GaN) on silicon carbide (SiC) devices without any GaN buffer. Such a GaN–SiC hybrid material was developed in order to improve thermal management and to reduce trapping effects. Fabricated Schottky barrier diodes (SBDs) demonstrated an ideality factor n at approximately 1.7 and breakdown voltages (fields) up to 780 V (approximately 0.8 MV/cm). Hall measurements revealed a thermally stable electron density at N2DEG = 1 × 1013 cm−2 of two-dimensional electron gas in the range of 77–300 K, with mobilities μ = 1.7 × 103 cm2/V∙s and μ = 1.0 × 104 cm2/V∙s at 300 K and 77 K, respectively. The maximum drain current and the transconductance were demonstrated to be as high as 0.5 A/mm and 150 mS/mm, respectively, for the transistors with gate length LG = 5 μm. Low-frequency noise measurements demonstrated an effective trap density below 1019 cm−3 eV−1. RF analysis revealed fT and fmax values up to 1.3 GHz and 6.7 GHz, respectively, demonstrating figures of merit fT × LG up to 6.7 GHz × µm. These data further confirm the high potential of a GaN–SiC hybrid material for the development of thin high electron mobility transistors (HEMTs) and SBDs with improved thermal stability for high-frequency and high-power applications.

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Section: Resultsmentioning

confidence: 96%

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

et al. 2020

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“…GaN vertical FETs with an additional back current blocking layer have been proposed and simulated for high-power electronics [3]. AlGaN/GaN metal-insulator-semiconductor HEMTs have been studied and exhibit a high breakdown voltage and an on-off current ratio [4]. The two-dimensional electron gas of an In x Al 1-x N/AIN/GaN HEMT has been studied and modeled by considering the polarization and quantum mechanical effects [5].…”

Section: The Current Research Trendsmentioning

confidence: 99%

Nanoelectronic Materials, Devices and Modeling: Current Research Trends

Zhu

2019

Electronics

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“…Addition of a gate dielectric to realize AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOS-HEMTs) is shown to further improve the gain and noise figure of such devices when operated at high frequency [3], [4]. AlGaN/GaN MOS-HEMTs also offer a lower subthreshold leakage current, better stability, and reduced current-collapse compared to commonly used AlGaN/GaN HEMTs [5]- [7]. Traditionally, for using AlGaN/GaN HEMTs or MOS-HEMTs in RF electronic circuits, a small signal equivalent circuit (SSEC) model of the device is required.…”

Section: Introductionmentioning

confidence: 99%

Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs

Jadhav

Ozawa

Baratov

et al. 2021

IEEE J. Electron Devices Soc.

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Traditional lumped small signal equivalent circuit models of AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOS-HEMTs) are made up of constant valued circuit elements. Such models are unable to capture the high frequency behavior (above 20 GHz) of the device. In this work, a modified small signal equivalent circuit model of AlGaN/GaN MOS-HEMTs is presented. The key feature of the proposed model is that the values of the different circuit elements in the model are considered to be frequency dependent in nature and not constants. The frequency dependent value of each circuit element is mathematically represented using polynomial functions where the coefficients of the functions are determined via a least-square curve fitting approach. This frequency dependent attribute of the circuit element values ensures that the proposed model is very accurate at high frequencies without sacrificing the compactness of the model topology. The accuracy of the proposed model has been verified up to 50 GHz using experimentally measured Y-parameters of AlGaN/GaN MOS-HEMTs having a different gate dielectric and gate length.

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AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer

Cited by 60 publications

References 43 publications

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

Nanoelectronic Materials, Devices and Modeling: Current Research Trends

Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs

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